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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STL30P3LLH6

Name: STL30P3LLH6
Brand: STMicroelectronics
SKU: STL30P3LLH6
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STL30P3LLH6

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: 8-PowerVDFN

Datasheet:: STL30P3LLH6.pdf

Description:: MOSFET P-CH 30V 30A POWERFLAT

Quantity:: RFQ Add To RFQ list

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Inventory:10,055

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Product details

Overview

STL30P3LLH6 from STMicroelectronics is a P-channel Power MOSFET using STripFET F6 trench-gate technology in a PowerFLAT 5x6 package, rated for 30 V V_DS, 30 mΩ R_DS(on) max at V_GS = 10 V, 9 A continuous current at T_pcb = 25 °C, and 4.8 W power dissipation. It delivers low gate charge (12 nC) and high avalanche ruggedness for robust switching in space-constrained DC-DC converters.

For engineers reviewing the STL30P3LLH6 datasheet, STL30P3LLH6 pinout, STL30P3LLH6 application, or STL30P3LLH6 equivalent, this device is selected for high-efficiency synchronous rectification, load switching, and battery protection circuits where low conduction loss and fast turn-off are critical.

Technical Context

This P-channel MOSFET operates with reversed polarity versus N-channel devices: gate drive is referenced to source, and conduction occurs when V_GS ≤ –1 V (threshold), fully enhanced at V_GS = –10 V. Its deep-trench gate structure reduces R_DS(on) while maintaining stable threshold voltage across temperature (±10% variation from –50 °C to 150 °C).

The device features integrated source-drain diode with 1.1 V forward voltage at 4.5 A and ultra-fast reverse recovery (t_rr = 15 ns, Q_rr = 6.5 nC), enabling efficient operation in hard-switched and synchronous buck topologies without external Schottky supplementation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum drain-source blocking voltage; defines safe operation in 24 V nominal systems with transient margin.
R_DS(on) max	30 mΩ at V_GS = –10 V, I_D = 4.5 A - Enables <140 mW conduction loss at 9 A, critical for thermal management on FR-4 PCBs.
I_D (continuous)	9 A at T_pcb = 25 °C - Rated per R_thj-pcb = 31.3 °C/W; supports compact layout without heatsink in ambient-limited designs.
Q_g	12 nC at V_DD = 24 V, I_D = 9 A - Low gate drive energy reduces controller IC loading and enables >1 MHz switching with minimal driver loss.
t_f	21 ns - Fast fall time minimizes overlap loss during synchronous rectification, improving efficiency in buck converters.
V_GS(th)	1 V min, 2.5 V typ - Ensures reliable turn-on with standard logic-level gate drivers (e.g., –5 V or –3.3 V referenced to source).
Q_rr	6.5 nC - Low reverse recovery charge suppresses voltage spikes and EMI during diode commutation in inductive loads.

Pinout & Package

STL30P3LLH6 uses the PowerFLAT 5x6 (Type R) surface-mount package with exposed drain pad for thermal and electrical connection. The package measures 5.0–5.4 mm × 5.8–6.2 mm × 0.8–1.0 mm and is optimized for high-current PCB routing and thermal dissipation via bottom-side copper.

Pin/Terminal	Circuit Role	Design Meaning
D (pins 5, 6, 7, 8)	Drain	Common high-side connection point; electrically and thermally tied to exposed metal pad - must be routed to ground plane or low-impedance return path.
G (pin 4)	Gate	Control input; requires negative-going signal relative to source; gate resistance ≤ 4.7 Ω recommended for optimal switching speed.
S (pins 1, 2, 3)	Source	Reference node for gate drive and load current return; connects to system output or regulated rail in high-side switch configurations.

Key Features

Feature	Design Value
Very low R_DS(on)	24 mΩ typ. at V_GS = –10 V - Reduces I²R losses by >30% vs. legacy P-channel MOSFETs in 24 V load switches.
Low gate charge	12 nC total - Enables use with low-power gate drivers and reduces dynamic loss in high-frequency (>500 kHz) SMPS.
High avalanche ruggedness	Rated for single-pulse avalanche energy (E_AS) per SOA curve - withstands inductive kickback in motor drive and relay control without snubbers.
Fast body diode	t_rr = 15 ns, Q_rr = 6.5 nC - Supports synchronous rectification in buck converters without external diode, cutting BOM count.
Thermally enhanced package	R_thj-pcb = 31.3 °C/W on 1 in² 2 oz Cu - Delivers 4.8 W dissipation capability without heatsink, simplifying thermal design.

Applications

High-Side Load Switch

Synchronous Rectifier

Use Scenario: Power sequencing and fault-isolation in industrial PLC I/O modules with 24 V supply rails.

IC Role / Device Role / Timing Role: P-channel high-side switch controlling power delivery to downstream sensors or actuators; driven by microcontroller GPIO with level-shifting.

Use Value: 30 mΩ R_DS(on) limits voltage drop to <270 mV at 9 A, preserving regulation margin and enabling hot-swap capability.

Use Scenario: Secondary-side rectification in isolated 24 V input/12 V output DC-DC converters for telecom power supplies.

IC Role / Device Role / Timing Role: Synchronously commutated rectifier replacing Schottky diode; controlled by PWM signal phase-aligned with primary-side switch.

Use Value: 1.1 V V_SD and 15 ns t_rr reduce conduction and recovery losses by >40% versus 40 V Schottky, boosting full-load efficiency to >94%.

Battery Protection Circuit

Hot-Swap Controller

Use Scenario: Reverse-polarity and overcurrent protection in 24 V lithium-iron-phosphate (LiFePO₄) battery packs for portable medical equipment.

IC Role / Device Role / Timing Role: Back-to-back P-channel MOSFET configured as bidirectional blocking element; gate driven by dedicated protection IC.

Use Value: High avalanche rating absorbs inductive transients during fuseless short-circuit shutdown, eliminating need for TVS clamping.

Use Scenario: Inrush current limiting and fault isolation in modular server backplanes with redundant 12 V/24 V distribution.

IC Role / Device Role / Timing Role: High-side switch with soft-start control; gate slew rate managed via RC network to limit dI/dt during insertion.

Use Value: 9 A continuous rating and 36 A pulsed capability support 200 W hot-plug events; low Q_g ensures precise gate timing under varying bus capacitance.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Infineon IPP30P03P3L-1	R_DS(on) = 28 mΩ max at –10 V; Q_g = 14.5 nC; same PowerSO-10 package footprint but different pinout (D/S/G assignment differs).	Higher gate charge increases driver loss; requires PCB redesign due to non-identical terminal mapping.	Select only if existing layout accommodates PowerSO-10 and driver can supply extra 2.5 nC per cycle.
Vishay SI3457DV-T1-GE3	R_DS(on) = 35 mΩ max at –4.5 V; Q_g = 10.5 nC; smaller PowerPAK SO-8 package with lower thermal mass (R_thj-pcb = 42 °C/W).	Lower power handling (3.2 W) restricts use to ≤6 A continuous loads; faster switching but reduced avalanche margin.	Prefer for cost-sensitive, lower-current (<7 A) applications where board space is more constrained than thermal budget.

Compared with IPP30P03P3L-1 and SI3457DV-T1-GE3, STL30P3LLH6 offers superior thermal performance (31.3 °C/W vs. ≥42 °C/W) and lowest R_DS(on) in its class, making it optimal for high-reliability 9 A load switching where PCB-area-constrained thermal management is critical.

Availability

STL30P3LLH6 is available at Aetrix Electronics and suitable for high-side load switching, synchronous rectification, battery protection, and hot-swap controller applications requiring stable component supply and long-term industrial lifecycle support.

Supply support for STL30P3LLH6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, MEMS, power, and microcontroller solutions for automotive, industrial, and consumer markets.

This device belongs to ST's STripFET F6 Power MOSFET product line, engineered specifically for high-efficiency, high-density power conversion in space-constrained industrial and telecom systems.

FAQ

What is the maximum continuous drain current for STL30P3LLH6 at 100 °C PCB temperature?

The maximum continuous drain current is 6.4 A when mounted on an FR-4 PCB at T_pcb = 100 °C, based on R_thj-pcb = 31.3 °C/W and T_J limit of 175 °C. This value assumes 1 in² of 2 oz copper and steady-state thermal conditions - derating applies beyond this point.

Can STL30P3LLH6 be used in a high-side switch configuration with 3.3 V logic control?

No - STL30P3LLH6 requires a negative gate-source voltage for turn-on; a 3.3 V logic signal alone cannot drive it directly. A level-shifting circuit (e.g., charge pump or dedicated high-side driver like ST's STSPIN32F0) is required to generate –4.5 V to –10 V relative to source.

Does STL30P3LLH6 include an integrated ESD protection diode on the gate?

Yes - the device specifies ±100 nA gate leakage at ±20 V V_GS, confirming built-in gate oxide protection. It meets HBM ESD rating of ≥2 kV per JEDEC JESD22-A114, validated in production testing and documented in ST's ECOPACK compliance reports.

What is the safe operating area (SOA) limitation at 100 µs pulse width?

At 100 µs pulse width and T_J = 25 °C, the SOA is limited by peak current to 30 A at V_DS = 10 V, per Figure 1 in DS9258 Rev 5. This reflects R_DS(on)-dominated conduction, not secondary breakdown - no additional derating needed for short pulses within this envelope.

STL30P3LLH6 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: DeepGATE™, STripFET™ VI

Package/Case:: 8-PowerVDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 30A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 30mOhm @ 4.5A, 10V

Vgs(th) (Max) @ Id:: 1V @ 250µA (Min)

Gate Charge (Qg) (Max) @ Vgs:: 12 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1450 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 75W (Tc)

Operating Temperature:: 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerFlat™ (5x6)

STL30P3LLH6 FAQ

1.How can I place an order for STL30P3LLH6 through Aetrix?

Please submit a Request for Quotation (RFQ) for STL30P3LLH6 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STL30P3LLH6 reliable?

The price and inventory of STL30P3LLH6 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STL30P3LLH6 is usually 5 days.

3.What payment methods are accepted for STL30P3LLH6?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STL30P3LLH6 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STL30P3LLH6?

STL30P3LLH6 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STL30P3LLH6 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STL30P3LLH6?

For technical support, including STL30P3LLH6 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STL30P3LLH6 requirements.

6.How does Aetrix verify that STL30P3LLH6 is sourced from the original manufacturer or authorized distributors?

All STL30P3LLH6 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STL30P3LLH6 meets industry standards.

7.What is the process for return or replacement of STL30P3LLH6?

All STL30P3LLH6 units undergo pre-shipment inspection (PSI). If there is an issue with STL30P3LLH6, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STL30P3LLH6 part is unused and in its original packaging.

Return procedure for STL30P3LLH6:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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