STMicroelectronics STL31N65M5

Overview

STL31N65M5 from STMicroelectronics is an N-channel 650 V, 0.135 Ω typ. R_DS(on), 15 A MDmesh™ V Power MOSFET in PowerFLAT™ 8x8 HV package, designed for high-efficiency switching in offline SMPS, PFC stages, and industrial inverters. It delivers 15 V gate threshold, 45 nC total gate charge, and 15 V/ns dv/dt capability.

For engineers reviewing the STL31N65M5 datasheet, STL31N65M5 pinout, STL31N65M5 application, or STL31N65M5 equivalent, key selection criteria include its 650 V V_DSS, low R_DS(on) × area ratio, high-temperature junction rating (150 °C), and optimized output capacitance for ZVS operation in resonant topologies.

Technical Context

This device employs ST's MDmesh™ V vertical silicon process combined with PowerMESH™ horizontal layout to achieve industry-leading R_DS(on) × area efficiency. Its 15 V gate threshold ensures robust noise immunity in high-noise industrial environments, while the 45 nC Q_g enables fast switching with moderate gate drive strength.

The PowerFLAT™ 8x8 HV package provides 1 °C/W R_thj-case, enabling 125 W continuous power dissipation at T_C = 25 °C. Its 15 V/ns dv/dt rating and 410 mJ E_AS support reliable operation under fast transient conditions and unclamped inductive switching.

Key Specifications

Pinout & Package

PowerFLAT™ 8x8 HV is a surface-mount, thermally enhanced package with an exposed drain pad on the bottom side. It features 3 terminals: Gate (G), Source (S), and Drain (D), arranged in a single-row configuration compatible with automated assembly and high-current PCB routing.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with IPW65R019C7 and IXTH30N65X2, the STL31N65M5 offers optimal balance of low R_DS(on), manageable Q_g, and compact PowerFLAT™ packaging-making it ideal for space-constrained 100–300 kHz industrial and telecom power supplies where cost and thermal simplicity are prioritized over extreme frequency scaling.

Availability

STL31N65M5 is available at Aetrix Electronics and suitable for server PSUs, industrial motor drives, telecom rectifiers, and EV charger PFC stages requiring stable component supply across multi-year production cycles.

Supply support for STL31N65M5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, with manufacturing, R&D, and sales operations across Europe, Asia, and the Americas.

The MDmesh™ V series was developed specifically for high-efficiency, high-power-density AC-DC and DC-DC conversion in industrial, telecom, and computing infrastructure applications demanding superior R_DS(on) × area performance.

FAQ

What is the maximum continuous drain current at case temperature of 100 °C?

The STL31N65M5 supports 12 A continuous drain current when the case temperature (T_C) is maintained at 100 °C, as specified in Table 2 of the datasheet. This rating is limited by thermal resistance junction-to-case (1 °C/W) and package power handling, not silicon capability alone.

Does this MOSFET include an integrated body diode, and what are its recovery characteristics?

Yes, the STL31N65M5 integrates a fast-recovery source-drain diode with 290 ns reverse recovery time (t_rr) and 4 µC reverse recovery charge (Q_rr) at T_j = 25 °C. At 150 °C, t_rr increases to 340 ns and Q_rr to 5 µC, confirming stable performance across full operating temperature range.

Can the PowerFLAT™ 8x8 HV package be hand-soldered, and what PCB layout guidance applies?

Hand-soldering is not recommended due to the large exposed drain pad requiring uniform thermal mass and reflow profile control. ST specifies a minimum 7.05 × 4.15 mm thermal pad with 12 vias (0.3 mm diameter) to inner ground planes. Recommended stencil aperture is 80% open area to prevent solder voiding.

Is gate resistive damping required, and what value is typical for 200 kHz operation?

A gate resistor of 4.7 Ω is validated in the datasheet (Figure 20) for 200–300 kHz switching with 10 V drive, yielding 46 ns voltage delay and 8 ns voltage rise time. This value balances EMI suppression and switching loss; values below 2.2 Ω risk ringing, while above 10 Ω increases turn-on loss disproportionately.