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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STL33N60DM6

Name: STL33N60DM6
Brand: STMicroelectronics
SKU: STL33N60DM6
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STL33N60DM6

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: 8-PowerVDFN

Datasheet:: STL33N60DM6.pdf

Description:: MOSFET N-CH 600V 21A PWRFLAT HV

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STL33N60DM6 from STMicroelectronics is a high-voltage N-channel Power MOSFET in the MDmesh DM6 series, featuring 600 V V_DS, 140 mΩ R_DS(on) max at 10 V V_GS, and 21 A continuous drain current at T_C = 25 °C. It integrates a fast-recovery body diode with Q_rr = 0.47 µC (T_j = 25 °C) and trr = 105 ns, enabling high-efficiency ZVS phase-shift converters and bridge topologies.

For engineers reviewing the STL33N60DM6 datasheet, STL33N60DM6 pinout, STL33N60DM6 application, or STL33N60DM6 equivalent, key selection criteria include dv/dt ruggedness (100 V/ns), low gate charge (Q_g = 35 nC), C_oss,eq = 225 pF, avalanche rating (E_AS = 360 mJ), and PowerFLAT 8x8 HV thermal performance (R_thJC = 0.83 °C/W).

Technical Context

This MOSFET employs ST's MDmesh DM6 superjunction architecture optimized for high-voltage switching with minimized recovery charge and enhanced R_DS(on)/area ratio. Its Zener-protected gate and 100% avalanche-tested construction ensure robustness under unclamped inductive switching stress.

The device delivers extremely high dv/dt ruggedness (100 V/ns) and diode recovery di/dt capability (1000 A/µs), validated under ISD ≤ 21 A and VDD = 400 V conditions. Its C_iss/C_oss/C_rss values (1500 pF / 115 pF / 3 pF) support precise gate drive design for soft-switching topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - Withstands DC bus voltages up to 480 V in ZVS operation while maintaining safe margin against breakdown.
R_DS(on) max	140 mΩ at V_GS = 10 V, I_D = 10.5 A - Enables low conduction loss in 21 A continuous hard-switched applications.
Q_g	35 nC - Reduces gate drive power and enables faster turn-on with lower RG dependency in high-frequency designs.
trr / Q_rr	105 ns / 0.47 µC at T_j = 25 °C - Minimizes commutation loss and EMI in synchronous rectification and LLC resonant converters.
R_thJC	0.83 °C/W - Supports 150 W dissipation at T_C = 25 °C, enabling compact heatsink integration in high-power density SMPS.
E_AS	360 mJ - Guarantees single-pulse unclamped inductive energy handling without failure at T_j = 25 °C.
dv/dt ruggedness	100 V/ns - Ensures reliable operation during rapid voltage transients in half-bridge and full-bridge configurations.

Pinout & Package

STL33N60DM6 is housed in a surface-mount PowerFLAT 8x8 HV package with exposed drain pad for thermal and electrical connection. The package features 5 terminals arranged in a single-row configuration with pin 1 identified by marking orientation on tape.

Pin/Terminal	Circuit Role	Design Meaning
1	Gate	High-impedance control input requiring <35 nC total charge for full enhancement; referenced to source potential.
2	Driver source	Internal connection to source of driver FET in integrated gate structure; used for Kelvin source sensing in precision gate drive layouts.
3, 4	Power source	Parallel source terminals providing low-inductance return path for 21 A continuous current; must be routed with minimal loop area.
5	Drain	Exposed copper pad serving as primary high-current output and thermal interface; electrically tied to drain potential and PCB thermal plane.

Key Features

Feature	Design Value
Fast-recovery body diode	trr = 105 ns and Q_rr = 0.47 µC enable efficient synchronous rectification without external Schottky replacement.
Low gate charge & capacitance	Q_g = 35 nC, C_iss = 1500 pF, and C_rss = 3 pF reduce switching losses and simplify gate driver selection for >100 kHz operation.
100% avalanche tested	Each unit passes single-pulse E_AS = 360 mJ test, ensuring reliability in overvoltage fault conditions without derating.
Zener-protected gate	Integrated gate oxide protection clamps V_GS to ±25 V, preventing damage from transient coupling in high-dv/dt environments.
Extremely high dv/dt ruggedness	Rated 100 V/ns ensures immunity to parasitic turn-on during hard commutation in multi-phase inverters and PFC stages.

Applications

Industrial Motor Drives

Server & Telecom PSU

Use Scenario: Three-phase IGBT/MOSFET inverter stage driving 3–7.5 kW AC induction motors with field-oriented control.

IC Role / Device Role / Timing Role: High-side and low-side switching element in 6-pack topology operating at 8–16 kHz PWM frequency.

Use Value: Low Q_rr and high dv/dt immunity prevent shoot-through during dead-time transitions and reduce snubber losses.

Use Scenario: Primary-side switch in 1–3 kW LLC resonant DC-DC converter for 48 V intermediate bus in AI server racks.

IC Role / Device Role / Timing Role: ZVS-capable power switch synchronized to resonant tank zero-crossings at 300–700 kHz.

Use Value: C_oss,eq = 225 pF and fast diode recovery enable reliable soft-switching across full load range with <1% efficiency penalty.

Solar Inverters

EV Onboard Chargers

Use Scenario: DC-AC H-bridge stage in string inverters converting 600–1000 V PV array output to grid-synchronized 230 V AC.

IC Role / Device Role / Timing Role: High-voltage bridge arm switch supporting unipolar modulation with active neutral-point clamping.

Use Value: 600 V rating and 100% avalanche testing ensure long-term reliability under lightning surge and grid fault conditions.

Use Scenario: Isolated DC-DC stage in 6.6 kW bidirectional OBC converting 400 V battery to 400 V DC-link for PFC front-end.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier MOSFET operating in phase-shifted full-bridge configuration.

Use Value: Low R_DS(on) (140 mΩ) and Kelvin source pins minimize conduction loss and improve current sensing accuracy at 21 A RMS.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXFH30N60X	Higher R_DS(on) (180 mΩ), higher Q_g (52 nC), TO-247 package with higher R_thJC (0.95 °C/W)	Requires larger heatsink and slower switching; better suited for <100 kHz hard-switched PFC than ZVS LLC	Select when legacy TO-247 footprint compatibility or higher single-pulse avalanche energy (E_AS = 520 mJ) is prioritized over density.
IPP60R190C7	Lower R_DS(on) (190 mΩ typ.), higher C_iss (1950 pF), CoolMOS C7 process with lower Q_rr (0.32 µC)	Superior light-load efficiency but reduced dv/dt ruggedness (50 V/ns); requires stricter layout control	Select for ultra-high-efficiency 1–2 kW adapters where Q_rr dominates loss budget and board space allows TO-220FP thermal management.

Compared with IXFH30N60X and IPP60R190C7, STL33N60DM6 offers optimal balance of low R_DS(on), ultra-low Q_rr, and industry-leading dv/dt immunity in a thermally superior surface-mount package-making it preferred for space-constrained, high-frequency ZVS designs demanding ruggedness and repeatability.

Availability

STL33N60DM6 is available at Aetrix Electronics and suitable for industrial motor drives, solar inverters, server PSUs, and EV onboard chargers requiring stable component supply, traceable sourcing, and lifecycle continuity.

Supply support for STL33N60DM6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

This device belongs to the MDmesh DM6 high-voltage MOSFET product line, engineered specifically for high-efficiency, high-frequency resonant and soft-switching power conversion systems operating above 100 kHz.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STL33N60DM6 supports 13 A continuous drain current at T_C = 100 °C, as specified in Table 1 of DS12985 Rev 3. This derating reflects thermal limits of the PowerFLAT 8x8 HV package and must be applied when ambient or heatsink conditions restrict case temperature rise.

Does this MOSFET require an external gate resistor for stability?

A gate resistor is required to control dV/dt and oscillation risk; typical values range from 2.2 Ω to 10 Ω depending on drive strength and layout parasitics. The intrinsic gate resistance is 1.8 Ω, and recommended test condition for switching times uses R_G = 4.7 Ω per Figure 13.

Can the body diode be used for synchronous rectification in a buck converter?

Yes-the fast-recovery body diode has trr = 105 ns and Q_rr = 0.47 µC at 25 °C, making it suitable for synchronous rectification in medium-frequency buck converters up to 500 kHz, provided layout minimizes source inductance to avoid reverse recovery overshoot.

What is the safe operating area (SOA) limitation at 10 µs pulse width?

At t_p = 10 µs, the SOA curve (Figure 1) limits operation to ≤60 V and ≤70 A for single-pulse conditions at T_j ≤ 150 °C. This boundary is defined by both R_DS(on) conduction and transient thermal impedance, not avalanche capability.

STL33N60DM6 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ M6

Package/Case:: 8-PowerVDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 21A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 140mOhm @ 10.5A, 10V

Vgs(th) (Max) @ Id:: 4.75V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 35 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 1500 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 150W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerFlat™ (8x8) HV

STL33N60DM6 FAQ

1.How can I place an order for STL33N60DM6 through Aetrix?

Please submit a Request for Quotation (RFQ) for STL33N60DM6 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STL33N60DM6 reliable?

The price and inventory of STL33N60DM6 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STL33N60DM6 is usually 5 days.

3.What payment methods are accepted for STL33N60DM6?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STL33N60DM6 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STL33N60DM6?

STL33N60DM6 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STL33N60DM6 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STL33N60DM6?

For technical support, including STL33N60DM6 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STL33N60DM6 requirements.

6.How does Aetrix verify that STL33N60DM6 is sourced from the original manufacturer or authorized distributors?

All STL33N60DM6 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STL33N60DM6 meets industry standards.

7.What is the process for return or replacement of STL33N60DM6?

All STL33N60DM6 units undergo pre-shipment inspection (PSI). If there is an issue with STL33N60DM6, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STL33N60DM6 part is unused and in its original packaging.

Return procedure for STL33N60DM6:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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