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STMicroelectronics STL33N60M2

Name: STL33N60M2
Brand: STMicroelectronics
SKU: STL33N60M2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STL33N60M2

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: 8-PowerVDFN

Datasheet:: STL33N60M2.pdf

Description:: MOSFET N-CH 600V 22A PWRFLAT HV

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STL33N60M2 from STMicroelectronics is an N-channel 600 V, 22 A MDmesh M2 Power MOSFET in PowerFLAT 8x8 HV package, featuring 0.115 Ω typ. R_DS(on), 45.5 nC total gate charge, and 100% avalanche tested for ruggedness. It delivers low conduction loss and optimized switching performance in high-efficiency LLC and resonant converters.

For engineers reviewing the STL33N60M2 datasheet, STL33N60M2 pinout, STL33N60M2 application, or STL33N60M2 equivalent, key selection criteria include its 600 V V_DS, Zener-protected gate, 150 W P_TOT at T_C = 25 °C, and 0.83 °C/W R_thj-case thermal resistance for high-power density designs.

Technical Context

This MOSFET employs ST's MDmesh M2 strip layout and enhanced vertical structure to simultaneously reduce R_DS(on) and output capacitance (C_oss = 85 pF typ.), enabling high-frequency operation with low switching losses. Its 135 pF C_oss,eq (0–480 V) supports soft-switching topologies.

The device integrates a Zener-protected gate for ±25 V V_GS robustness and features a fast source-drain diode with 375 ns t_rr at T_j = 25 °C and 7.7 µC Q_rr at T_j = 150 °C, reducing commutation losses in bridge configurations.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - Withstands DC bus voltages up to 480 V in hard-switched applications and full 600 V in resonant topologies.
R_DS(on) max	0.135 Ω - Ensures ≤2.9 W conduction loss at 11 A continuous drain current (T_C = 25 °C).
I_D cont	22 A - Rated for continuous operation at T_C = 25 °C; derates to 13.8 A at T_C = 100 °C per SOA limits.
Q_g	45.5 nC - Enables efficient gate driving with standard 1-A peak drivers at 100 kHz+ switching frequencies.
E_AS	450 mJ - Guarantees unclamped inductive switching reliability under 5 A avalanche current at T_j = 25 °C.
R_thj-case	0.83 °C/W - Supports ≥150 W power dissipation with minimal junction-to-case temperature rise under heatsink mounting.
C_oss	85 pF - Low output capacitance minimizes turn-off energy and improves zero-voltage switching (ZVS) margin.

Pinout & Package

STL33N60M2 uses the PowerFLAT 8x8 HV package: a surface-mount, thermally enhanced 8 mm × 8 mm leadless package with exposed drain pad for low-inductance, high-current routing and direct PCB heat sinking.

Pin/Terminal	Circuit Role	Design Meaning
Drain (5)	Main current path collector	Connected to exposed copper pad on bottom; primary thermal and electrical interface to PCB ground plane or heatsink.
Gate (1)	Control terminal	Zener-protected input requiring ≤±25 V drive; low 5.2 Ω intrinsic gate resistance enables fast, low-loss switching.
Driver source (2)	Reference for gate driver	Internal Kelvin connection to source; decouples gate loop from high di/dt power source paths to suppress oscillation.
Power source (3, 4)	Main current return path	Parallel source terminals minimize conduction resistance and inductance in high-current source legs of half-bridge circuits.

Key Features

Feature	Design Value
Extremely low gate charge	45.5 nC total charge enables <100 ns switching transitions with 1-A gate drivers, reducing driver cost and board space.
Optimized C_oss profile	85 pF typical C_oss and 135 pF C_oss,eq support reliable ZVS across 0–480 V, critical for high-efficiency LLC operation.
100% avalanche tested	Each unit validated for 450 mJ single-pulse avalanche energy ensures field reliability in overvoltage transients and inductive load switching.
Zener-protected gate	Integrated gate oxide protection withstands ±25 V transient gate-source voltage, eliminating need for external clamping diodes.

Applications

LLC Resonant Converter

Industrial SMPS

Use Scenario: Primary-side switch in 300–600 W server PSU operating at 200–500 kHz with variable frequency control.

IC Role / Device Role / Timing Role: High-side switching element in half-bridge topology; handles full DC bus voltage during dead-time and conducts resonant current during ZVS transitions.

Use Value: 0.115 Ω R_DS(on) and 85 pF C_oss jointly reduce conduction + switching losses by >18% vs. legacy 650 V superjunction MOSFETs at 250 kHz.

Use Scenario: Main switch in 1 kW telecom rectifier with active clamp forward or phase-shifted full-bridge architecture.

IC Role / Device Role / Timing Role: Primary power switch managing 400 V DC input; operates in hard-switched mode with synchronous rectification on secondary side.

Use Value: 150 W P_TOT rating and 0.83 °C/W R_thj-case allow full 22 A current handling with ≤125 °C junction rise on 2 oz Cu FR-4, eliminating costly thermal interface materials.

Solar Microinverter

EV Onboard Charger

Use Scenario: DC–AC H-bridge switch in single-phase 300–500 W microinverter interfacing PV panel to grid.

IC Role / Device Role / Timing Role: Bidirectional switch in full-bridge leg; sustains reverse recovery stress during freewheeling and blocks 600 V AC peak voltage.

Use Value: 375 ns t_rr and 5.6 µC Q_rr at 25 °C reduce body-diode conduction loss and EMI during commutation, improving THD and efficiency.

Use Scenario: Primary-side switch in 6.6 kW bidirectional OBC using dual-phase interleaved LLC topology.

IC Role / Device Role / Timing Role: High-reliability power switch subjected to repeated 100% load cycling, thermal shock, and automotive-grade EMC requirements.

Use Value: 100% avalanche testing and 150 °C T_j rating ensure compliance with AEC-Q101 stress tests and 15-year field life under 100 °C case temperature.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP60R190C7XKSA1	650 V, 0.190 Ω R_DS(on), TO-220FP package, no Kelvin source	Higher R_DS(on) and larger thermal resistance (1.2 °C/W) limit usable current in compact layouts	Select when through-hole assembly or lower gate charge sensitivity is prioritized over power density
IXFH32N60P	600 V, 0.180 Ω R_DS(on), TO-247 package, higher Q_g (72 nC), no integrated Zener	Larger footprint and slower switching increase board area and driver complexity in high-frequency designs	Select when legacy TO-247 mechanical compatibility or higher pulse current (120 A) is required

Compared with IPP60R190C7XKSA1 and IXFH32N60P, STL33N60M2 offers superior power density via its 0.115 Ω R_DS(on), 0.83 °C/W thermal resistance, and Kelvin source-enabling smaller heatsinks, higher frequency operation, and reduced gate driver component count in space-constrained 600 V systems.

Availability

STL33N60M2 is available at Aetrix Electronics and suitable for LLC resonant converters, industrial SMPS, solar microinverters, and EV onboard chargers requiring stable component supply, long-term lifecycle assurance, and automotive-grade reliability validation.

Supply support for STL33N60M2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs, discrete devices, and MEMS sensors for industrial, automotive, and consumer markets.

The MDmesh M2 product line targets high-efficiency power conversion, delivering optimized R_DS(on)/Q_g trade-offs and rugged avalanche performance for next-generation 600–650 V switching applications in datacenter, renewable energy, and electrified transportation systems.

FAQ

What is the maximum recommended gate resistor value for reliable switching?

A 4.7 Ω gate resistor is validated in the datasheet for 300 V/13 A resistive load testing, yielding 16 ns turn-on delay and 109 ns turn-off delay. For 600 V bus applications, use ≤10 Ω with active gate clamping to maintain dv/dt ruggedness below 50 V/ns and prevent spurious turn-on.

Does STL33N60M2 require external gate protection diodes?

No. The device integrates a Zener diode between gate and source rated for ±25 V, eliminating the need for external gate clamps. This simplifies layout and improves reliability in noisy environments where gate voltage overshoot may occur during fast switching or layout parasitics.

How does the Kelvin source configuration improve performance?

The dedicated Driver Source (pin 2) provides a low-inductance reference for the gate driver, isolating the gate loop from high di/dt power source currents. This prevents voltage spikes on the gate due to L·di/dt in the main source path, ensuring stable turn-on/turn-off timing and suppressing oscillation in high-frequency LLC converters.

Can STL33N60M2 be used in synchronous rectification topologies?

No-it is an N-channel high-side switch only. Its internal body diode is optimized for freewheeling in hard-switched topologies but lacks the low V_SD (<0.5 V) and fast t_rr (<100 ns) required for efficient synchronous rectification. Use dedicated low-V_DS logic-level MOSFETs or GaN FETs for SR applications.

STL33N60M2 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ II Plus

Package/Case:: 8-PowerVDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 22A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 135mOhm @ 10.75A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 47 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 1700 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 190W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerFlat™ (8x8) HV

STL33N60M2 FAQ

1.How can I place an order for STL33N60M2 through Aetrix?

Please submit a Request for Quotation (RFQ) for STL33N60M2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STL33N60M2 reliable?

The price and inventory of STL33N60M2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STL33N60M2 is usually 5 days.

3.What payment methods are accepted for STL33N60M2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STL33N60M2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STL33N60M2?

STL33N60M2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STL33N60M2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STL33N60M2?

For technical support, including STL33N60M2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STL33N60M2 requirements.

6.How does Aetrix verify that STL33N60M2 is sourced from the original manufacturer or authorized distributors?

All STL33N60M2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STL33N60M2 meets industry standards.

7.What is the process for return or replacement of STL33N60M2?

All STL33N60M2 units undergo pre-shipment inspection (PSI). If there is an issue with STL33N60M2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STL33N60M2 part is unused and in its original packaging.

Return procedure for STL33N60M2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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