STMicroelectronics STL35N15F3

Overview

STL35N15F3 from STMicroelectronics is an N-channel enhancement-mode Power MOSFET using STripFET™ III technology, rated for 150 V drain-source voltage, 0.0355 Ω typical R_DS(on) at V_GS = 10 V and I_D = 3.5 A, and 7 A continuous current at T_pcb = 25 °C. It operates in a low-profile PowerFLAT™ 5x6 package and is used in DC-DC converters and motor control switches where low conduction loss and fast switching are required.

For engineers reviewing the STL35N15F3 datasheet, STL35N15F3 pinout, STL35N15F3 application, or STL35N15F3 equivalent, key selection criteria include its 150 V V_DS, 0.0355 Ω R_DS(on), 49.4 nC total gate charge, 31.3 °C/W junction-to-PCB thermal resistance, and compatibility with FR-4 PCB layouts requiring compact high-current switching.

Technical Context

This MOSFET employs STripFET™ III process architecture to minimize both on-resistance and gate charge-enabling high-efficiency switching in medium-voltage power stages. Its optimized cell layout achieves improved die-to-footprint ratio while maintaining robust safe operating area (SOA) up to 28 A pulsed drain current.

The device integrates a fast-recovery source-drain diode with 124 ns reverse recovery time and 670 nC reverse recovery charge at 150 °C junction temperature, supporting synchronous rectification and inductive load commutation without external freewheeling diodes in many designs.

Key Specifications

Pinout & Package

The STL35N15F3 is housed in a surface-mount PowerFLAT™ 5x6 package (type C-B), featuring an exposed thermal pad on the bottom side for enhanced PCB heat dissipation and a 1 mm maximum profile suitable for space-constrained applications.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IRF7470PBF and DMN3016LFG-7, the STL35N15F3 uniquely balances 150 V capability, 0.0355 Ω R_DS(on), and 31.3 °C/W thermal resistance in a low-profile 5x6 mm package-making it optimal for space- and efficiency-critical 24–48 V industrial power stages where voltage margin and PCB thermal performance are prioritized.

Availability

STL35N15F3 is available at Aetrix Electronics and suitable for DC-DC converters, brushed DC motor drivers, LED constant-current drivers, and hot-swap controllers requiring stable component supply and long-term industrial lifecycle support.

Supply support for STL35N15F3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs for automotive, industrial, and consumer markets.

The STL35N15F3 belongs to ST's STripFET™ Power MOSFET product line, engineered specifically for high-efficiency, medium-voltage switching in space-constrained industrial power supplies and motor drives.

FAQ

What is the maximum continuous drain current for STL35N15F3 under standard PCB mounting?

The STL35N15F3 supports 7 A continuous drain current when mounted on a 1-inch² FR-4 PCB with 2 oz copper, per R_thj-pcb = 31.3 °C/W rating. This value assumes T_pcb = 25 °C and accounts for thermal conduction through the exposed pad into the PCB copper pour-not case temperature limits.

Can STL35N15F3 be driven directly by a 3.3 V microcontroller GPIO?

Yes-the gate threshold voltage (V_GS(th)) ranges from 2 V to 4 V, allowing turn-on with 3.3 V logic. However, full enhancement to 0.0355 Ω R_DS(on) requires V_GS ≥ 10 V; for low-loss operation, a dedicated gate driver or level shifter is recommended.

Does STL35N15F3 include an integrated body diode, and what are its recovery characteristics?

Yes-it features an integral source-drain diode with 124 ns reverse recovery time (t_rr) and 670 nC reverse recovery charge (Q_rr) at 150 °C, measured under 6 A forward current and 100 A/µs di/dt. These values enable use in synchronous rectification without external diodes in many buck converter designs.

What is the recommended PCB footprint for thermal reliability?

ST recommends a footprint matching Figure 21 in Doc ID 018598 Rev 2: a 4.2 mm × 3.5 mm exposed pad with 8 thermal vias (0.3 mm diameter, spaced ≤1.2 mm apart) connecting to inner-layer copper pours. Minimum solder mask opening must expose full pad area to ensure mechanical adhesion and thermal transfer.