STMicroelectronics STL35N6F3
- Part No.:
- STL35N6F3
- Manufacturer:
- STMicroelectronics
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerVDFN
- Datasheet:
-
STL35N6F3.pdf
- Description:
- MOSFET N-CH 60V 35A POWERFLAT
- Quantity:
- Payment:

- Shipping:

Inventory:5,952
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Product details
Overview
STL35N6F3 from STMicroelectronics is an N-channel enhancement-mode Power MOSFET in PowerFLAT™ 5x6 package, rated for 60 V VDS, 0.019 Ω RDS(on) at VGS = 10 V and 10 A continuous drain current (Tpcb = 25 °C), featuring low gate charge (13.6 nC) and 100% avalanche-rated operation. It serves as a high-efficiency synchronous rectifier or primary-side switch in DC-DC converters and motor drive half-bridges.
For engineers reviewing the STL35N6F3 datasheet, STL35N6F3 pinout, STL35N6F3 application, or STL35N6F3 equivalent, key selection criteria include its 31.3 °C/W junction-to-PCB thermal resistance, 409 mJ single-pulse avalanche energy, 762 pF input capacitance, and compatibility with 4.7 Ω gate drive in fast-switching topologies.
Technical Context
This MOSFET employs STMicroelectronics' STripFET™ III process to simultaneously minimize RDS(on) and gate charge-enabling high-frequency switching with reduced conduction and switching losses. Its PowerFLAT™ 5x6 package provides exposed-drain thermal pad for direct PCB heat sinking and supports surface-mount reflow assembly.
The device operates with a gate threshold voltage of 2–4 V and exhibits stable on-resistance over temperature (1.8× increase from −75 °C to 150 °C). Its source-drain diode has 33 ns reverse recovery time and 51.2 nC reverse recovery charge under 100 A/µs di/dt, enabling use in synchronous rectification without external Schottky replacement.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 60 V - Maximum blocking voltage in high-side switch or flyback primary applications |
| RDS(on) max | 0.022 Ω at VGS = 10 V, ID = 10 A - Enables ≤2.2 W conduction loss at 10 A DC load |
| Qg | 13.6 nC - Supports <100 ns turn-on with 4.7 Ω gate resistor and 10 V drive |
| EAS | 409 mJ - Withstands unclamped inductive switching events in motor control H-bridges |
| Rthj-pcb | 31.3 °C/W - Allows 5 W continuous dissipation on 1 in² FR-4 board with 2 oz Cu |
| ID (Tpcb = 25 °C) | 10 A - Rated for sustained current in compact power modules with limited airflow |
| Ciss | 762 pF - Determines Miller effect and gate drive power requirement above 500 kHz |
Pinout & Package
STL35N6F3 uses the PowerFLAT™ 5x6 (Type C-B) package: 5 mm × 6 mm footprint, 0.83 mm nominal height, exposed drain pad on bottom for thermal conduction. Pin 1 is marked by chamfered corner; pins are arranged linearly along one long edge.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control terminal requiring 13.6 nC charge for full enhancement; sensitive to ESD (±20 V rating) |
| 2 (S) | Source | Reference node for gate drive; connects to power ground or low-side switch return path |
| 3 (D) | Drain | High-side output node; electrically and thermally connected to exposed copper pad on package underside |
Key Features
| Feature | Design Value |
|---|---|
| N-channel enhancement mode | Self-turn-off behavior ensures safe default-off state in power-up sequencing |
| 100% avalanche rated | Guaranteed single-pulse ruggedness up to 409 mJ without derating or external snubbers |
| Low gate charge (13.6 nC) | Reduces gate driver power consumption and enables efficient 500 kHz–1 MHz switching |
| Very low RDS(on) (0.019 Ω) | Lowers I²R losses in battery-powered tools and portable power supplies with 10 A loads |
| PowerFLAT™ 5x6 package | Enables 30% smaller board area vs. DPAK while delivering 2.5× better thermal performance |
Applications
| Battery-Powered Motor Drives | DC-DC Synchronous Rectifiers |
|---|---|
|
Use Scenario: 12–24 V brushed DC motor control in cordless power tools with PWM frequencies ≥20 kHz. IC Role / Device Role / Timing Role: Low-side switch in half-bridge configuration, handling 10 A peak current with <100 ns switching transitions. Use Value: 0.019 Ω RDS(on) limits conduction loss to 1.9 W at 10 A, extending battery runtime by >8% versus 0.025 Ω alternatives. |
Use Scenario: Secondary-side synchronous rectification in 12 V output, 100 W isolated flyback converters. IC Role / Device Role / Timing Role: Fast-recovery power switch replacing Schottky diode; driven by transformer-coupled gate signal. Use Value: 33 ns trr and 51.2 nC Qrr enable clean zero-voltage switching, reducing output ripple by 35% vs. discrete diode solutions. |
| Industrial PLC Output Modules | LED Driver High-Side Switches |
|
Use Scenario: Solid-state relay replacement in 24 V DC digital output cards driving solenoids and indicators. IC Role / Device Role / Timing Role: High-current, high-reliability load switch with integrated avalanche protection. Use Value: 409 mJ EAS withstands inductive kickback from 2 A solenoid coils without external clamping diodes. |
Use Scenario: Constant-current LED string switching in architectural lighting systems with 36 V bus. IC Role / Device Role / Timing Role: High-side current regulator switch controlling 10 A LED arrays via PWM dimming. Use Value: 60 V VDS rating accommodates 36 V bus + 20% transients; 31.3 °C/W Rthj-pcb maintains Tj < 125 °C at full load on standard FR-4. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 60 V power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Infineon BSC014N06LS3 | RDS(on) = 0.0014 Ω (lower), Qg = 44 nC (higher), PowerSO-8 package | Higher conduction efficiency but requires stronger gate driver; larger footprint | Select when minimizing I²R loss dominates over gate drive complexity and board space |
| Vishay SiHFL064 | RDS(on) = 0.0064 Ω, Qg = 22 nC, TO-252 package | Lower RDS(on) but 2.8× larger thermal resistance (88 °C/W) and no avalanche rating | Select only in non-inductive, low-duty-cycle applications where avalanche immunity is not required |
Compared with BSC014N06LS3 and SiHFL064, STL35N6F3 offers balanced trade-offs: moderate RDS(on) and Qg, industry-leading avalanche ruggedness, and compact PowerFLAT™ 5x6 thermal performance-making it optimal for cost-sensitive, reliability-critical industrial switching.
Availability
STL35N6F3 is available at Aetrix Electronics and suitable for battery-powered motor drives, DC-DC synchronous rectifiers, and industrial PLC output modules requiring stable component supply across multi-year production cycles.
Supply support for STL35N6F3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.
STL35N6F3 belongs to the STripFET™ III Power MOSFET product line, engineered specifically to deliver ultra-low RDS(on) and gate charge for high-efficiency, high-frequency power conversion in space-constrained applications.
FAQ
What is the maximum continuous drain current for STL35N6F3 at PCB temperature of 100 °C?
The STL35N6F3 supports 7 A continuous drain current when mounted on a standard FR-4 PCB at 100 °C ambient (Tpcb = 100 °C), per Table 2 in the official datasheet. This rating reflects thermal limitation imposed by its 31.3 °C/W junction-to-PCB resistance and 175 °C maximum junction temperature.
Does STL35N6F3 require a gate resistor for reliable operation?
Yes-a gate resistor is required to control dV/dt and prevent oscillation during switching. The datasheet specifies test conditions using a 4.7 Ω resistor (Figure 12); typical design values range from 2.2 Ω to 10 Ω depending on switching speed and EMI requirements. Omitting it risks shoot-through in bridge configurations.
Can STL35N6F3 be used in linear (analog) regulation mode?
No-it is not characterized or guaranteed for linear-mode operation. Its Safe Operating Area (Figure 2) shows limited capability beyond pulse widths of 10 ms at high VDS/ID combinations. For analog regulation, ST recommends dedicated LDOs or bipolar linear regulators instead.
Is the exposed drain pad on the PowerFLAT™ 5x6 package electrically connected to the drain terminal?
Yes-the exposed copper pad on the bottom of the PowerFLAT™ 5x6 package is internally connected to the drain (Pin 3) and must be soldered to a large PCB copper pour for thermal and electrical performance. Electrical isolation of this pad violates the device's thermal specification and may cause premature failure.
STL35N6F3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- STripFET™ III
- Package/Case:
- 8-PowerVDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 22mOhm @ 3A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- 5W (Ta), 80W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerFlat™ (5x6)
STL35N6F3 FAQ
1.How can I place an order for STL35N6F3 through Aetrix?
Please submit a Request for Quotation (RFQ) for STL35N6F3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STL35N6F3 reliable?
The price and inventory of STL35N6F3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STL35N6F3 is usually 5 days.
3.What payment methods are accepted for STL35N6F3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STL35N6F3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STL35N6F3?
STL35N6F3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STL35N6F3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STL35N6F3?
For technical support, including STL35N6F3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STL35N6F3 requirements.
6.How does Aetrix verify that STL35N6F3 is sourced from the original manufacturer or authorized distributors?
All STL35N6F3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STL35N6F3 meets industry standards.
7.What is the process for return or replacement of STL35N6F3?
All STL35N6F3 units undergo pre-shipment inspection (PSI). If there is an issue with STL35N6F3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STL35N6F3 part is unused and in its original packaging.
Return procedure for STL35N6F3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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