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STMicroelectronics STL36DN6F7
- Part No.:
- STL36DN6F7
- Manufacturer:
- STMicroelectronics
- Category:
- FET, MOSFET Arrays
- Package:
- 8-PowerVDFN
- Datasheet:
-
STL36DN6F7.pdf
- Description:
- MOSFET 2N-CH 60V 33A POWERFLAT
- Quantity:
- Payment:
- Shipping:
Inventory:5,607
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Product details
Overview
STL36DN6F7 from STMicroelectronics is a dual N-channel Power MOSFET in PowerFLAT™ 5x6 double island package, rated for 60 V drain-source voltage, 23 mΩ typical RDS(on), and 33 A continuous drain current at TC = 25 °C. It delivers high-efficiency switching in compact DC-DC converters and motor control half-bridges.
For engineers reviewing the STL36DN6F7 datasheet, STL36DN6F7 pinout, STL36DN6F7 application, or STL36DN6F7 equivalent, key selection criteria include its low Crss/Ciss ratio for EMI immunity, 17.1 ns reverse recovery time, and 2.6 °C/W junction-to-case thermal resistance in high-power density board designs.
Technical Context
This device integrates two independent N-channel enhancement-mode MOSFETs in a single PowerFLAT™ 5x6 double island package with thermally isolated source pads. Its STripFET™ F7 trench gate structure reduces both RDS(on) and gate charge (Qg = 8 nC), enabling fast switching with td(on) = 7.85 ns and tf = 3.95 ns under standard test conditions.
The dual configuration supports synchronous rectification and half-bridge topologies without external isolation. Avalanche ruggedness and 132 A pulsed drain current (IDM) support unclamped inductive load handling per Figure 16 test circuit.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 60 V - Maximum blocking voltage for 48 V bus systems with margin |
| RDS(on) typ. | 23 mΩ at VGS = 10 V, ID = 4.5 A - Enables <1 W conduction loss at 20 A |
| ID cont. (TC = 25 °C) | 33 A - Supports high-current power stages with heatsink mounting |
| Qg | 8 nC - Reduces gate drive power and enables 1 MHz+ switching in SMPS |
| tr/tf | 3.25 ns / 3.95 ns - Minimizes switching transition losses in hard-switched topologies |
| Crss/Ciss | 16 pF / 420 pF - Low ratio improves noise immunity and dV/dt robustness |
| TJ max | 175 °C - Allows operation in automotive under-hood and industrial motor drive environments |
Pinout & Package
STL36DN6F7 uses the PowerFLAT™ 5x6 double island type C package (JEDEC MO-271 variant), featuring two electrically isolated source pads for independent thermal and electrical paths. The package has no exposed leads; all terminals are bottom-soldered copper islands.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Source 1 (S1) | Channel 1 source terminal | Thermally isolated copper island; connects to PCB ground plane for Channel 1 |
| Drain 1 (D1) | Channel 1 drain terminal | Shared internal drain connection to top-side metal; routed to high-side switch node |
| Gate 1 (G1) | Channel 1 gate terminal | Bottom-soldered pad; requires low-inductance gate loop for <8 nC drive |
| Source 2 (S2) | Channel 2 source terminal | Independent copper island; enables separate current sensing or floating bias for half-bridge |
| Drain 2 (D2) | Channel 2 drain terminal | Internally tied to same drain metallization as D1; supports paralleled or independent use |
| Gate 2 (G2) | Channel 2 gate terminal | Isolated gate pad; allows independent PWM control of each channel |
Key Features
| Feature | Design Value |
|---|---|
| STripFET™ F7 trench technology | Reduces RDS(on) × Qg FoM by >30% vs prior generation, improving efficiency at 500 kHz–1 MHz |
| Low Crss/Ciss ratio | 3.8% - Limits Miller-induced shoot-through risk in high dV/dt half-bridge operation |
| High avalanche energy rating | Supports unclamped inductive switching (UIS) per Figure 16, eliminating need for external snubbers |
| Double island thermal layout | Enables 2.6 °C/W Rthj-case per channel with dedicated PCB copper areas, not shared thermal path |
Applications
| Motor Control Half-Bridge | High-Density DC-DC Converter |
|---|---|
Use Scenario: 24 V BLDC motor driver with integrated half-bridge and current sensing. IC Role / Device Role / Timing Role: Dual N-channel MOSFET providing complementary high-side/low-side switching with independent source Kelvin sensing. Use Value: 23 mΩ RDS(on) limits conduction loss to ≤1.1 W per channel at 20 A, reducing heatsink requirements. | Use Scenario: 48 V input, 12 V output synchronous buck converter in telecom power supply. IC Role / Device Role / Timing Role: Primary switching pair in interleaved 2-phase topology with independent gate control. Use Value: 8 nC total gate charge enables efficient 1 MHz operation with <1.5 W gate drive loss per phase. |
| Automotive Body Control Module | Industrial Solenoid Driver |
Use Scenario: Load driving for HVAC actuators and window lift motors in ASIL-B compliant modules. IC Role / Device Role / Timing Role: High-reliability switching element with built-in avalanche ruggedness for inductive load transients. Use Value: 175 °C max junction temperature and 132 A pulsed rating withstand ISO 7637-2 pulse 5a load dump events. | Use Scenario: 24 V solenoid actuation in programmable logic controller (PLC) output stage. IC Role / Device Role / Timing Role: Robust switching device with integrated body diode for flyback energy recirculation. Use Value: 1.2 V forward voltage (VSD) at 9 A and 17.1 ns trr minimize diode conduction loss and EMI during turn-off. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Infineon BSC020N06NS3 | Single-channel 60 V, 2.0 mΩ, PowerPAK® SO-8 - lower RDS(on) but no dual configuration | Requires two devices and extra PCB area to replicate dual functionality | Select when ultra-low on-resistance dominates over integration and layout simplicity |
| ON Semiconductor NTMFS4C09NT1G | Dual N-channel 60 V, 3.2 mΩ, PowerSO-8 - higher RDS(on), larger footprint, higher Ciss (650 pF) | Less suitable for >500 kHz switching due to higher gate charge and slower tf | Select when legacy SO-8 assembly infrastructure exists and thermal performance margin is available |
Compared with BSC020N06NS3 and NTMFS4C09NT1G, STL36DN6F7 uniquely balances dual-channel integration, 23 mΩ RDS(on), and 8 nC Qg in a 5×6 mm² footprint-enabling space-constrained half-bridge designs without sacrificing switching speed or thermal performance.
Availability
STL36DN6F7 is available at Aetrix Electronics and suitable for motor control half-bridges, high-density DC-DC converters, and automotive body control modules requiring stable component supply across extended production lifecycles.
Supply support for STL36DN6F7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.
The STL36DN6F7 belongs to ST's STripFET™ F7 power MOSFET product line, engineered specifically for high-efficiency, high-frequency switching in space-constrained power conversion and motor drive applications.
FAQ
What is the maximum allowable PCB temperature for reliable operation?
The device is rated for 6.7 A continuous drain current at Tpcb = 100 °C, indicating safe operation on FR-4 boards with ≥1 inch² 2 oz copper when thermal vias and proper copper pour are implemented. Junction temperature must remain ≤175 °C, requiring Rthj-pcb ≤31.3 °C/W under those conditions.
Does STL36DN6F7 support gate drive voltages below 10 V?
Yes - VGS(th) ranges from 2 V to 4 V, enabling partial enhancement at 5 V logic-level drive. However, RDS(on) increases significantly below 10 V; full 23 mΩ performance requires VGS ≥10 V per the datasheet test condition.
How is the "double island" feature utilized in layout?
The two isolated source pads (S1 and S2) must be connected to separate PCB copper zones - one for high-side return and one for low-side return - to preserve independent current paths and avoid ground bounce coupling between channels in half-bridge configurations.
Can STL36DN6F7 replace discrete single-channel MOSFETs in existing designs?
Yes, with layout revision: the dual-channel integration reduces component count and PCB area but requires re-routing of gate and source connections to match the PowerFLAT™ 5x6 double island pinout. Thermal design must account for shared drain metallization and independent source thermal paths.
STL36DN6F7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- STripFET™
- Package/Case:
- 8-PowerVDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 60V
- Current - Continuous Drain (Id) @ 25°C:
- 33A (Tc)
- Rds On (Max) @ Id, Vgs:
- 27mOhm @ 4.5A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 8nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 420pF @ 30V
- Power - Max:
- 58W
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerFlat™ (5x6)
STL36DN6F7 FAQ
1.How can I place an order for STL36DN6F7 through Aetrix?
Please submit a Request for Quotation (RFQ) for STL36DN6F7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STL36DN6F7 reliable?
The price and inventory of STL36DN6F7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STL36DN6F7 is usually 5 days.
3.What payment methods are accepted for STL36DN6F7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STL36DN6F7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STL36DN6F7?
STL36DN6F7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STL36DN6F7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STL36DN6F7?
For technical support, including STL36DN6F7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STL36DN6F7 requirements.
6.How does Aetrix verify that STL36DN6F7 is sourced from the original manufacturer or authorized distributors?
All STL36DN6F7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STL36DN6F7 meets industry standards.
7.What is the process for return or replacement of STL36DN6F7?
All STL36DN6F7 units undergo pre-shipment inspection (PSI). If there is an issue with STL36DN6F7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STL36DN6F7 part is unused and in its original packaging.
Return procedure for STL36DN6F7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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