STMicroelectronics STL36N55M5

Overview

STL36N55M5 from STMicroelectronics is an N-channel 550 V, 22.5 A Power MOSFET based on MDmesh™ M5 vertical process technology in a PowerFLAT™ 8x8 HV package. It delivers 0.066 Ω typ. R_DS(on), 62 nC total gate charge, and 150 W power dissipation at T_C = 25 °C, enabling high-efficiency switching in industrial SMPS and PFC stages.

For engineers reviewing the STL36N55M5 datasheet, STL36N55M5 pinout, STL36N55M5 application, or STL36N55M5 equivalent, key selection criteria include avalanche ruggedness (510 mJ E_AS), fast diode recovery (292 ns t_rr at T_j = 25 °C), low C_oss (75 pF), and thermal resistance (0.83 °C/W R_thj-case).

Technical Context

This MOSFET employs ST's MDmesh™ M5 silicon architecture to achieve ultra-low conduction loss while maintaining robust 550 V blocking capability. Its 0.066 Ω typ. R_DS(on) at V_GS = 10 V and 16.5 A enables high-current operation with minimal I²R heating in continuous conduction mode converters.

The device integrates a fast-recovery body diode with 292 ns reverse recovery time (t_rr) and 4.2 µC Q_rr at 100 A/µs di/dt, reducing switching losses in hard-switched topologies. Its 15 V/ns dv/dt immunity ensures reliable operation under high-speed voltage transients.

Key Specifications

Pinout & Package

STL36N55M5 uses the PowerFLAT™ 8x8 HV package: a surface-mount, exposed-drain, thermally enhanced leadless package with 5 terminals (3 drain pads, 1 source, 1 gate). The drain is connected to the bottom thermal pad for optimal heat transfer to PCB copper.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with IPP60R099C7 and STW38N60M2, STL36N55M5 offers superior power density (150 W in 64 mm² vs. ~1000 mm² for TO-247), lower conduction loss at 22.5 A, and faster switching-making it optimal for compact, high-efficiency industrial power supplies where PCB real estate and thermal management are critical constraints.

Availability

STL36N55M5 is available at Aetrix Electronics and suitable for industrial switch-mode power supplies, server rectifiers, and motor drive inverters requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for STL36N55M5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

This device belongs to ST's MDmesh™ M5 high-voltage power MOSFET product line, engineered specifically for high-efficiency, high-power-density AC-DC and DC-DC conversion in industrial and telecom infrastructure.

FAQ

What is the maximum continuous drain current at case temperature of 100 °C?

The STL36N55M5 supports 17 A continuous drain current (I_D) at T_C = 100 °C, as specified in Table 2 of the official datasheet (DocID022602 Rev 4). This rating reflects thermal limitation imposed by the PowerFLAT™ 8x8 HV package's R_thj-case of 0.83 °C/W and maximum junction temperature of 150 °C.

Does this MOSFET require a gate resistor for stability in hard-switched applications?

Yes-a gate resistor (typically 4.7 Ω to 10 Ω) is recommended to dampen ringing caused by the 1.85 Ω intrinsic gate resistance interacting with PCB trace inductance and C_iss (2670 pF). Figure 14 in the datasheet shows E_on/E_off trade-offs versus R_G, confirming optimal switching loss at R_G ≈ 4.7 Ω for 22 A operation.

Can the body diode be used for synchronous rectification in a flyback converter?

No-the body diode is not optimized for synchronous rectification. Its 292 ns t_rr and 4.2 µC Q_rr cause significant reverse recovery loss at >100 kHz. For flyback SR, ST recommends dedicated low-Q_rr MOSFETs like STL12N60M2 or external SiC Schottky diodes to avoid cross-conduction and efficiency degradation.

Is the PowerFLAT™ 8x8 HV package RoHS-compliant and halogen-free?

Yes-ST certifies the STL36N55M5 as ECOPACK®2 compliant: fully RoHS-compliant, halogen-free, and compliant with JEDEC J-STD-020 moisture sensitivity level 3 (MSL3) when stored per packaging instructions. Full compliance documentation is available via ST's Quality & Reliability portal using order code STL36N55M5.