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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STL36N60M6

Name: STL36N60M6
Brand: STMicroelectronics
SKU: STL36N60M6
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STL36N60M6

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: 8-PowerVDFN

Datasheet:: STL36N60M6.pdf

Description:: MOSFET N-CH 600V 25A PWRFLAT HV

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STL36N60M6 from STMicroelectronics is an N-channel 600 V, 91 mΩ typ. (110 mΩ max), 25 A MDmesh™ M6 superjunction power MOSFET in PowerFLAT™ 8x8 HV package, optimized for high-efficiency LLC and boost PFC converters with Zener-protected gate and 100% avalanche-tested ruggedness.

For engineers reviewing the STL36N60M6 datasheet, STL36N60M6 pinout, STL36N60M6 application, or STL36N60M6 equivalent, key selection criteria include R_DS(on) × area efficiency, dv/dt ruggedness (50 V/ns), low Q_gd/Q_g ratio (0.56), and dual-source configuration enabling reduced switching losses in hard-switched topologies.

Technical Context

This MOSFET employs ST's MDmesh™ M6 technology, delivering improved R_DS(on) per die area versus prior MDmesh generations while maintaining robust unclamped inductive switching capability (E_AS = 750 mJ) and fast diode recovery (t_rr = 340 ns at T_j = 25 °C).

The PowerFLAT™ 8x8 HV package integrates separate driver source (pin 2) and power source (pins 3 & 4), enabling precise gate loop control and minimizing common-source inductance-critical for stable operation at high dv/dt (50 V/ns) and di/dt (400 A/µs).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - supports primary-side switching in 400 V DC bus systems with 20% margin for voltage transients
R_DS(on) max	110 mΩ at V_GS = 10 V, I_D = 12.5 A - enables <1.1 W conduction loss at 15 A continuous drain current
Q_gd	25 nC - low gate-drain charge reduces Miller-induced turn-off delay and improves hard-switching immunity
t_r/t_f	5.3 ns / 7.3 ns - ultra-fast switching minimizes overlap loss in resonant and quasi-resonant converters
R_thj-case	0.78 °C/W - enables 160 W dissipation at ΔT = 125 °C, supporting high-power-density thermal design
dv/dt ruggedness	50 V/ns - ensures reliable operation under fast transient conditions without spurious turn-on
E_AS	750 mJ - validated single-pulse avalanche energy allows safe operation during inductive fault events

Pinout & Package

STL36N60M6 uses the PowerFLAT™ 8x8 HV surface-mount package (8.0 mm × 8.0 mm × 0.85 mm), featuring exposed drain pad for low-inductance, high-current PCB routing and thermal transfer to internal copper planes.

Pin/Terminal	Circuit Role	Design Meaning
Drain (5)	Main high-voltage current path	Exposed copper pad on bottom side - must be connected to large copper pour for thermal and EMI performance
Gate (1)	Control input	Low gate input resistance (R_G = 1.6 Ω) enables direct drive from standard gate drivers without external series resistor
Driver source (2)	Reference for gate driver return	Separate Kelvin connection isolates gate loop from high di/dt power source paths, suppressing Miller oscillation
Power source (3, 4)	Main source current return	Parallel pins reduce source inductance and improve current sharing in high-frequency switching

Key Features

Feature	Design Value
MDmesh™ M6 silicon technology	91 mΩ typ. R_DS(on) at 600 V - achieves best-in-class R_DS(on) × area trade-off for 600 V SJ MOSFETs
Dual-source configuration	Separated driver source (pin 2) and power source (pins 3,4) - eliminates gate loop coupling to high di/dt paths
Zener-protected gate	±25 V V_GS rating with integrated gate oxide protection - prevents ESD and overvoltage damage during handling and layout
100% avalanche tested	Single-pulse E_AS = 750 mJ at T_j = 25 °C - guarantees ruggedness in real-world inductive fault conditions
Low C_oss eq.	332 pF (0–480 V) - reduces capacitive turn-on loss and improves light-load efficiency in resonant topologies

Applications

LLC Resonant Converter

Boost PFC Stage

Use Scenario: Primary-side switch in 1–3 kW server PSU or telecom rectifier operating at 100–500 kHz.

IC Role / Device Role / Timing Role: High-voltage synchronous switch with zero-voltage switching (ZVS) capability enabled by low C_oss and fast t_r/t_f.

Use Value: Achieves >98% peak efficiency due to 91 mΩ R_DS(on) and 340 ns diode t_rr, reducing body diode conduction loss during dead time.

Use Scenario: Active switch in continuous conduction mode (CCM) boost PFC front-end for industrial motor drives.

IC Role / Device Role / Timing Role: High-reliability 600 V switch handling 25 A RMS input current with 50 V/ns dv/dt immunity.

Use Value: Enables stable operation under line surges and load transients without false turn-on, verified by 100% avalanche testing.

Solar Microinverter H-Bridge

Industrial UPS Inverter Stage

Use Scenario: Low-side switch in full-bridge inverter of 300–500 W photovoltaic microinverter.

IC Role / Device Role / Timing Role: Fast-switching N-channel device paired with complementary high-side driver, leveraging driver source pin for clean gate control.

Use Value: Dual-source architecture suppresses gate ringing at 100+ kHz switching, improving EMI compliance and system reliability.

Use Scenario: Output stage switch in 5–10 kVA online UPS requiring high short-circuit withstand and thermal stability.

IC Role / Device Role / Timing Role: Rugged 600 V MOSFET rated for 15.6 A continuous at T_C = 100 °C with 0.78 °C/W R_thj-case.

Use Value: Sustains 100 A pulsed drain current (I_DM) during overload events while maintaining junction temperature below 150 °C.

Equivalent & Alternatives

The following parts are listed as comparable options for similar 600 V superjunction MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPW60R099P7XKSA1	99 mΩ max R_DS(on), TO-247 package, no driver source pin	Larger footprint, higher parasitic source inductance limits >300 kHz use	Preferred where through-hole mounting and legacy board compatibility are required
IXTH30N60P	600 V, 120 mΩ, TO-247, no Zener gate protection, lower E_AS (420 mJ)	Reduced avalanche margin and no integrated gate clamp increases external protection complexity	Selected when cost sensitivity outweighs need for guaranteed avalanche ruggedness and gate protection

Compared with IPW60R099P7XKSA1 and IXTH30N60P, STL36N60M6 delivers superior high-frequency efficiency via its dual-source pinout and lower C_oss eq., while its Zener-protected gate and 750 mJ E_AS provide stronger system-level robustness in compact, thermally constrained designs.

Availability

STL36N60M6 is available at Aetrix Electronics and suitable for LLC resonant converters, boost PFC stages, and industrial UPS inverters requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for STL36N60M6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, MEMS, power, and microcontroller solutions for automotive, industrial, and consumer markets.

This device belongs to the MDmesh™ M6 superjunction MOSFET product line, engineered specifically for high-efficiency, high-frequency AC-DC and DC-DC conversion in space-constrained power supplies and renewable energy systems.

FAQ

What is the maximum continuous drain current at case temperature of 100 °C?

The STL36N60M6 supports 15.6 A continuous drain current at T_C = 100 °C, as specified in Table 1 of DS11134 Rev 4. This derating reflects thermal limits of the PowerFLAT™ 8x8 HV package and ensures safe operation within SOA boundaries up to 10 ms pulse width.

Does the device include integrated gate protection?

Yes - the STL36N60M6 features Zener-protected gate structure, enabling ±25 V gate-source voltage tolerance and eliminating need for external gate clamping components. This protection is process-integrated and verified across production lots.

How does the dual-source configuration improve switching performance?

The dedicated driver source (pin 2) provides a low-inductance Kelvin return path for the gate driver, decoupling gate loop dynamics from high di/dt power source currents (pins 3 & 4). This reduces Miller-induced oscillation and enables stable 50 V/ns dv/dt operation without snubbers.

Is the device suitable for zero-voltage switching (ZVS) topologies?

Yes - with C_oss eq. = 332 pF (0–480 V), t_r = 5.3 ns, and t_rr = 340 ns, the STL36N60M6 is optimized for ZVS in LLC resonant converters. Its fast, soft-recovery body diode minimizes reverse recovery loss during resonant transitions.

STL36N60M6 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ M6

Package/Case:: 8-PowerVDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 25A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 110mOhm @ 12.5A, 10V

Vgs(th) (Max) @ Id:: 4.75V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 44.3 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 1960 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 160W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerFlat™ (8x8) HV

STL36N60M6 FAQ

1.How can I place an order for STL36N60M6 through Aetrix?

Please submit a Request for Quotation (RFQ) for STL36N60M6 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STL36N60M6 reliable?

The price and inventory of STL36N60M6 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STL36N60M6 is usually 5 days.

3.What payment methods are accepted for STL36N60M6?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STL36N60M6 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STL36N60M6?

STL36N60M6 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STL36N60M6 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STL36N60M6?

For technical support, including STL36N60M6 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STL36N60M6 requirements.

6.How does Aetrix verify that STL36N60M6 is sourced from the original manufacturer or authorized distributors?

All STL36N60M6 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STL36N60M6 meets industry standards.

7.What is the process for return or replacement of STL36N60M6?

All STL36N60M6 units undergo pre-shipment inspection (PSI). If there is an issue with STL36N60M6, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STL36N60M6 part is unused and in its original packaging.

Return procedure for STL36N60M6:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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