STMicroelectronics STL38DN6F7AG

Overview

STL38DN6F7AG from STMicroelectronics is an AEC-Q101 qualified N-channel 60 V, 24 mΩ typ. (27 mΩ max.), 10 A Power MOSFET in PowerFLAT™ 5x6 double island package, designed for high-efficiency automotive switching applications including DC-DC converters and motor drivers where low conduction loss and EMI robustness are critical.

For engineers reviewing the STL38DN6F7AG datasheet, STL38DN6F7AG pinout, STL38DN6F7AG application, or STL38DN6F7AG equivalent, key selection criteria include its 7.9 nC total gate charge, 7.9 pF Crss/Ciss ratio for reduced EMI, 50 mJ single-pulse avalanche energy, and thermal resistance of 2.6 °C/W junction-to-case - all validated for automotive-grade reliability.

Technical Context

This device employs STripFET™ F7 trench-gate technology to achieve ultra-low R_DS(on) while minimizing C_iss (380 pF), C_oss (320 pF), and Crss (7.9 pF), enabling fast switching with low gate drive loss. Its low Crss/Ciss ratio directly improves noise immunity in noisy automotive environments.

The MOSFET supports continuous 10 A drain current at both 25 °C and 100 °C case temperature, limited by package thermal design rather than silicon capability (which reaches 33 A at 25 °C). It features a robust source-drain diode with 1.3 V forward voltage and 21.5 ns reverse recovery time under 10 A/100 A/µs conditions.

Key Specifications

Pinout & Package

STL38DN6F7AG uses the PowerFLAT™ 5x6 double island WF type R package with exposed drain on the rear side for enhanced thermal performance. The top-side terminals are arranged in a 5-pin configuration: two parallel source pins (S1, S2), two parallel gate pins (G1, G2), and one drain pad (D1) - D2 is the rear-side drain connection not accessible on top surface.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 60 V automotive MOSFET applications.

Compared with IPP60R280P7XKSA1 and NTMFS6H800NLT1G, STL38DN6F7AG uniquely delivers AEC-Q101 compliance, 24 mΩ R_DS(on) in a thermally optimized double-island package, and 50 mJ E_AS - making it the only choice for safety-critical 48 V automotive power stages requiring production-grade reliability.

Availability

STL38DN6F7AG is available at Aetrix Electronics and suitable for automotive DC-DC converters, BLDC motor drivers, and on-board chargers requiring stable component supply across extended temperature ranges and long product lifecycles.

Supply support for STL38DN6F7AG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for automotive, industrial, and consumer markets.

This device belongs to ST's STripFET™ F7 automotive MOSFET product line, engineered specifically for high-reliability 12 V/48 V hybrid vehicle power conversion and motor control systems demanding AEC-Q101 compliance and superior figure-of-merit performance.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STL38DN6F7AG supports 10 A continuous drain current at T_C = 100 °C, as specified in Table 1 of DS12506. This rating is package-limited - the silicon itself supports up to 23 A at that temperature, but thermal constraints of the PowerFLAT™ 5x6 double island package cap the usable current at 10 A for sustained operation.

Does this MOSFET require a negative gate drive for safe operation?

No. STL38DN6F7AG has a ±20 V gate-source voltage rating and operates reliably with 0 V to +10 V gate drive. Its V_GS(th) of 2–4 V ensures clean turn-on using standard 3.3 V or 5 V microcontroller outputs; no negative bias is needed for stability or shoot-through prevention.

How is thermal performance affected by PCB layout?

Mounting on an FR-4 board with 1 inch² of 2 oz copper reduces R_thj-pcb to 32 °C/W (per Table 2), but the device's rear-side drain pad must be soldered to a large thermal pad connected to internal ground/power planes. Without proper thermal via placement beneath the drain island, junction temperature rise exceeds specifications even at 5 A continuous current.

Can STL38DN6F7AG replace older STripFET™ F4 or F5 devices in existing designs?

Yes - it is pin-compatible with earlier STripFET™ F4/F5 PowerFLAT™ 5x6 devices like STL220N6F7 and STL34DN6F7, offering identical footprint and improved R_DS(on), lower Q_g, and enhanced avalanche capability. Layout changes are unnecessary, but gate drive strength should be verified due to reduced Q_g enabling faster edge rates.