Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

STMicroelectronics STL3N10F7

Part No.:
STL3N10F7
Manufacturer:
STMicroelectronics
Category:
FETs, MOSFETs
Package:
6-PowerWDFN
Datasheet:
AetrixSTL3N10F7.pdf
Description:
MOSFET N-CH 100V 4A POWERFLAT
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:822

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

STL3N10F7 from STMicroelectronics is an N-channel enhancement-mode Power MOSFET with 100 V VDS, 0.062 Ω typ. RDS(on) at VGS = 10 V and 2 A, 4 A continuous drain current (Tpcb = 25 °C), and PowerFLAT™ 2x2 package. It delivers low gate charge (7.8 nC) and 100% avalanche-rated ruggedness for high-efficiency DC-DC converters and motor control switches.

For engineers reviewing the STL3N10F7 datasheet, STL3N10F7 pinout, STL3N10F7 application, or STL3N10F7 equivalent, key selection criteria include RDS(on) vs. temperature stability, unclamped inductive switching capability, gate threshold voltage range (2.5–4.5 V), and thermal resistance to PCB (52 °C/W).

Technical Context

This device implements ST's STripFET™ VII DeepGATE™ architecture, featuring a redesigned gate structure that minimizes RDS(on) while maintaining fast switching (td(on) = 6.3 ns, tf = 4 ns) and low output capacitance (Coss = 112 pF). Its 100% avalanche rating ensures robustness under transient overvoltage conditions in inductive loads.

The PowerFLAT™ 2x2 package enables high power density with exposed drain pad for thermal conduction to PCB. The device operates across –55 to 150 °C junction temperature and supports pulsed drain currents up to 16 A within safe operating area limits.

Key Specifications

ParameterValue and Actual Design Meaning
VDS100 V - maximum blocking voltage for 24/48 V bus-level switching applications
RDS(on) typ.0.062 Ω @ VGS = 10 V, ID = 2 A - enables <125 mW conduction loss at 4 A
Qg7.8 nC - reduces gate drive power and allows use with low-current drivers
ID cont.4 A @ Tpcb = 25 °C - suitable for compact load switches with FR-4 1 in² copper area
Rthj-pcb52 °C/W - defines thermal rise per watt dissipated into PCB without heatsink
VGS(th)2.5–4.5 V - compatible with 3.3 V and 5 V logic-level gate drive
Ciss408 pF - impacts Miller effect and turn-on speed in high-frequency PWM

Pinout & Package

STL3N10F7 is housed in a surface-mount PowerFLAT™ 2x2 package with exposed drain pad on bottom side for thermal management. The package has six terminals, three of which are internally connected to drain.

Pin/TerminalCircuit RoleDesign Meaning
1 (D)DrainPrimary high-side switching node; electrically tied to exposed pad
2 (D)DrainParallel drain connection to reduce package inductance and improve current sharing
3 (G)GateControl input; low Qg enables fast, low-loss switching
4 (S)SourceReference node for gate drive and current sensing; connects to PCB ground plane
5 (D)DrainThird parallel drain terminal for enhanced thermal and electrical performance
6 (D)DrainFourth drain connection-confirms full drain tie-out design for low RDS(on) optimization

Key Features

FeatureDesign Value
STripFET™ VII DeepGATE™ architectureReduces RDS(on) by ~15% vs. prior STripFET VI while preserving gate oxide reliability
100% avalanche ratedGuarantees operation under unclamped inductive switching stress up to EAS = 100 mJ (tested per JEDEC JESD24-11)
Low Qgd/Qg ratio0.22 (1.7/7.8 nC) - suppresses Miller-induced shoot-through in half-bridge configurations
Enhanced body diode recoverytrr = 30 ns, Qrr = 24 nC at Tj = 150 °C - minimizes switching loss in synchronous rectification

Applications

DC-DC Buck ConverterBLDC Motor Gate Driver

Use Scenario: High-efficiency 12 V → 5 V/3.3 V point-of-load converter in industrial PLC modules.

IC Role / Device Role: Low-side synchronous rectifier switch with 4 A peak current handling.

Use Value: 0.062 Ω RDS(on) cuts conduction loss by >30% vs. comparable 5 A MOSFETs, improving thermal margin at 500 kHz switching.

Use Scenario: Low-voltage (<24 V) brushless DC motor driver in HVAC fan control.

IC Role / Device Role: High-side or low-side phase switch in 3-phase inverter stage.

Use Value: 100% avalanche rating withstands back-EMF transients during commutation; 30 ns trr reduces cross-conduction loss.

USB-C Power Delivery SwitchLED Constant-Current Driver

Use Scenario: Input protection and load switching in 20 V/3 A USB PD sink designs.

IC Role / Device Role: Hot-swap FET controlling power path between input and buck controller.

Use Value: 2.5–4.5 V VGS(th) ensures clean turn-on with 3.3 V microcontroller GPIO; 16 A pulsed ID supports inrush limiting.

Use Scenario: Dimmable LED string driver with PWM-controlled current regulation.

IC Role / Device Role: Low-side current sink switch modulating LED current via source-follower configuration.

Use Value: Low RDS(on) maintains <1% current error across 0–4 A range; 52 °C/W Rthj-pcb enables passive cooling on 2-layer board.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
Infineon BSC014N04LSRDS(on) = 0.0014 Ω @ 4.5 V (lower), but VDS = 40 V onlyNot suitable for 100 V bus applications; limited to ≤48 V systemsSelect only when lower voltage rating and higher current density are acceptable trade-offs
ON Semiconductor NTMFS4C09NT1GRDS(on) = 0.009 Ω @ 4.5 V, VDS = 100 V, but Qg = 12.5 nC (higher)Higher gate charge increases driver loss and EMI in high-frequency SMPSPrefer when ultra-low RDS(on) dominates over switching efficiency

Compared with BSC014N04LS and NTMFS4C09NT1G, STL3N10F7 offers optimal balance of 100 V rating, 0.062 Ω RDS(on), and 7.8 nC Qg for space-constrained 24–48 V systems where thermal and gate-drive efficiency are jointly critical.

Availability

STL3N10F7 is available at Aetrix Electronics and suitable for DC-DC converters, BLDC motor drivers, USB-C power delivery switches, and LED constant-current drivers requiring stable component supply and long-term production continuity.

Supply support for STL3N10F7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

The STL3N10F7 belongs to ST's STripFET™ VII Power MOSFET product line, engineered specifically for high-efficiency, high-density power conversion in space-limited applications such as portable equipment and distributed power architectures.

FAQ

What is the maximum continuous drain current at 100 °C PCB temperature?

The STL3N10F7 supports 2.5 A continuous drain current when mounted on an FR-4 PCB at 100 °C ambient (Tpcb = 100 °C), as specified in Table 2 of the datasheet. This derating reflects thermal limits imposed by the 52 °C/W Rthj-pcb and 150 °C max junction temperature.

Does STL3N10F7 require a gate resistor for reliable switching?

A gate resistor (e.g., 4.7 Ω) is recommended to dampen ringing and control dV/dt during switching, especially in half-bridge configurations. The device's low Qg (7.8 nC) allows fast turn-on with minimal drive strength, but external resistance prevents oscillation caused by gate loop inductance and Ciss.

Can STL3N10F7 be used in linear mode (as a pass transistor)?

No - STL3N10F7 is not characterized or guaranteed for linear (saturation) operation. Its Safe Operating Area (SOA) curve (Figure 2) shows pulse-limited operation only; sustained linear use risks thermal runaway due to positive temperature coefficient of RDS(on) and lack of SOA derating data beyond 10 ms pulses.

Is the PowerFLAT™ 2x2 package RoHS and REACH compliant?

Yes - STL3N10F7 is offered in ECOPACK®-compliant PowerFLAT™ 2x2 packaging, meeting RoHS Directive 2011/65/EU and REACH Regulation (EC) No. 1907/2006. Full compliance documentation, including material declarations and substance thresholds, is available on ST's official website under ECOPACK® grade definitions.

STL3N10F7 Specifications

Product attributes
Attribute value
Manufacturer:
STMicroelectronics
Series:
DeepGATE™, STripFET™ VII
Package/Case:
6-PowerWDFN
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
100 V
Current - Continuous Drain (Id) @ 25°C:
4A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
70mOhm @ 2A, 10V
Vgs(th) (Max) @ Id:
4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
7.8 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
408 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
2.4W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PowerFlat™ (2x2)

STL3N10F7 FAQ

1.How can I place an order for STL3N10F7 through Aetrix?

Please submit a Request for Quotation (RFQ) for STL3N10F7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STL3N10F7 reliable?

The price and inventory of STL3N10F7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STL3N10F7 is usually 5 days.

3.What payment methods are accepted for STL3N10F7?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STL3N10F7 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STL3N10F7?

STL3N10F7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STL3N10F7 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STL3N10F7?

For technical support, including STL3N10F7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STL3N10F7 requirements.

6.How does Aetrix verify that STL3N10F7 is sourced from the original manufacturer or authorized distributors?

All STL3N10F7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STL3N10F7 meets industry standards.

7.What is the process for return or replacement of STL3N10F7?

All STL3N10F7 units undergo pre-shipment inspection (PSI). If there is an issue with STL3N10F7, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STL3N10F7 part is unused and in its original packaging.

Return procedure for STL3N10F7:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

STL3N10F7 Tags

  • STL3N10F7
  • STL3N10F7 PDF
  • STL3N10F7 Datasheet
  • STL3N10F7 Specifications
  • STL3N10F7 Images
  • STMicroelectronics
  • STMicroelectronics STL3N10F7
  • Buy STL3N10F7
  • STL3N10F7 Price
  • STL3N10F7 Distributor
  • STL3N10F7 Supplier
  • STL3N10F7 Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER