STMicroelectronics STL3N10F7
- Part No.:
- STL3N10F7
- Manufacturer:
- STMicroelectronics
- Category:
- FETs, MOSFETs
- Package:
- 6-PowerWDFN
- Datasheet:
-
STL3N10F7.pdf
- Description:
- MOSFET N-CH 100V 4A POWERFLAT
- Quantity:
- Payment:

- Shipping:

Inventory:822
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
STL3N10F7 from STMicroelectronics is an N-channel enhancement-mode Power MOSFET with 100 V VDS, 0.062 Ω typ. RDS(on) at VGS = 10 V and 2 A, 4 A continuous drain current (Tpcb = 25 °C), and PowerFLAT™ 2x2 package. It delivers low gate charge (7.8 nC) and 100% avalanche-rated ruggedness for high-efficiency DC-DC converters and motor control switches.
For engineers reviewing the STL3N10F7 datasheet, STL3N10F7 pinout, STL3N10F7 application, or STL3N10F7 equivalent, key selection criteria include RDS(on) vs. temperature stability, unclamped inductive switching capability, gate threshold voltage range (2.5–4.5 V), and thermal resistance to PCB (52 °C/W).
Technical Context
This device implements ST's STripFET™ VII DeepGATE™ architecture, featuring a redesigned gate structure that minimizes RDS(on) while maintaining fast switching (td(on) = 6.3 ns, tf = 4 ns) and low output capacitance (Coss = 112 pF). Its 100% avalanche rating ensures robustness under transient overvoltage conditions in inductive loads.
The PowerFLAT™ 2x2 package enables high power density with exposed drain pad for thermal conduction to PCB. The device operates across –55 to 150 °C junction temperature and supports pulsed drain currents up to 16 A within safe operating area limits.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 100 V - maximum blocking voltage for 24/48 V bus-level switching applications |
| RDS(on) typ. | 0.062 Ω @ VGS = 10 V, ID = 2 A - enables <125 mW conduction loss at 4 A |
| Qg | 7.8 nC - reduces gate drive power and allows use with low-current drivers |
| ID cont. | 4 A @ Tpcb = 25 °C - suitable for compact load switches with FR-4 1 in² copper area |
| Rthj-pcb | 52 °C/W - defines thermal rise per watt dissipated into PCB without heatsink |
| VGS(th) | 2.5–4.5 V - compatible with 3.3 V and 5 V logic-level gate drive |
| Ciss | 408 pF - impacts Miller effect and turn-on speed in high-frequency PWM |
Pinout & Package
STL3N10F7 is housed in a surface-mount PowerFLAT™ 2x2 package with exposed drain pad on bottom side for thermal management. The package has six terminals, three of which are internally connected to drain.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (D) | Drain | Primary high-side switching node; electrically tied to exposed pad |
| 2 (D) | Drain | Parallel drain connection to reduce package inductance and improve current sharing |
| 3 (G) | Gate | Control input; low Qg enables fast, low-loss switching |
| 4 (S) | Source | Reference node for gate drive and current sensing; connects to PCB ground plane |
| 5 (D) | Drain | Third parallel drain terminal for enhanced thermal and electrical performance |
| 6 (D) | Drain | Fourth drain connection-confirms full drain tie-out design for low RDS(on) optimization |
Key Features
| Feature | Design Value |
|---|---|
| STripFET™ VII DeepGATE™ architecture | Reduces RDS(on) by ~15% vs. prior STripFET VI while preserving gate oxide reliability |
| 100% avalanche rated | Guarantees operation under unclamped inductive switching stress up to EAS = 100 mJ (tested per JEDEC JESD24-11) |
| Low Qgd/Qg ratio | 0.22 (1.7/7.8 nC) - suppresses Miller-induced shoot-through in half-bridge configurations |
| Enhanced body diode recovery | trr = 30 ns, Qrr = 24 nC at Tj = 150 °C - minimizes switching loss in synchronous rectification |
Applications
| DC-DC Buck Converter | BLDC Motor Gate Driver |
|---|---|
Use Scenario: High-efficiency 12 V → 5 V/3.3 V point-of-load converter in industrial PLC modules. IC Role / Device Role: Low-side synchronous rectifier switch with 4 A peak current handling. Use Value: 0.062 Ω RDS(on) cuts conduction loss by >30% vs. comparable 5 A MOSFETs, improving thermal margin at 500 kHz switching. | Use Scenario: Low-voltage (<24 V) brushless DC motor driver in HVAC fan control. IC Role / Device Role: High-side or low-side phase switch in 3-phase inverter stage. Use Value: 100% avalanche rating withstands back-EMF transients during commutation; 30 ns trr reduces cross-conduction loss. |
| USB-C Power Delivery Switch | LED Constant-Current Driver |
Use Scenario: Input protection and load switching in 20 V/3 A USB PD sink designs. IC Role / Device Role: Hot-swap FET controlling power path between input and buck controller. Use Value: 2.5–4.5 V VGS(th) ensures clean turn-on with 3.3 V microcontroller GPIO; 16 A pulsed ID supports inrush limiting. | Use Scenario: Dimmable LED string driver with PWM-controlled current regulation. IC Role / Device Role: Low-side current sink switch modulating LED current via source-follower configuration. Use Value: Low RDS(on) maintains <1% current error across 0–4 A range; 52 °C/W Rthj-pcb enables passive cooling on 2-layer board. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Infineon BSC014N04LS | RDS(on) = 0.0014 Ω @ 4.5 V (lower), but VDS = 40 V only | Not suitable for 100 V bus applications; limited to ≤48 V systems | Select only when lower voltage rating and higher current density are acceptable trade-offs |
| ON Semiconductor NTMFS4C09NT1G | RDS(on) = 0.009 Ω @ 4.5 V, VDS = 100 V, but Qg = 12.5 nC (higher) | Higher gate charge increases driver loss and EMI in high-frequency SMPS | Prefer when ultra-low RDS(on) dominates over switching efficiency |
Compared with BSC014N04LS and NTMFS4C09NT1G, STL3N10F7 offers optimal balance of 100 V rating, 0.062 Ω RDS(on), and 7.8 nC Qg for space-constrained 24–48 V systems where thermal and gate-drive efficiency are jointly critical.
Availability
STL3N10F7 is available at Aetrix Electronics and suitable for DC-DC converters, BLDC motor drivers, USB-C power delivery switches, and LED constant-current drivers requiring stable component supply and long-term production continuity.
Supply support for STL3N10F7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.
The STL3N10F7 belongs to ST's STripFET™ VII Power MOSFET product line, engineered specifically for high-efficiency, high-density power conversion in space-limited applications such as portable equipment and distributed power architectures.
FAQ
What is the maximum continuous drain current at 100 °C PCB temperature?
The STL3N10F7 supports 2.5 A continuous drain current when mounted on an FR-4 PCB at 100 °C ambient (Tpcb = 100 °C), as specified in Table 2 of the datasheet. This derating reflects thermal limits imposed by the 52 °C/W Rthj-pcb and 150 °C max junction temperature.
Does STL3N10F7 require a gate resistor for reliable switching?
A gate resistor (e.g., 4.7 Ω) is recommended to dampen ringing and control dV/dt during switching, especially in half-bridge configurations. The device's low Qg (7.8 nC) allows fast turn-on with minimal drive strength, but external resistance prevents oscillation caused by gate loop inductance and Ciss.
Can STL3N10F7 be used in linear mode (as a pass transistor)?
No - STL3N10F7 is not characterized or guaranteed for linear (saturation) operation. Its Safe Operating Area (SOA) curve (Figure 2) shows pulse-limited operation only; sustained linear use risks thermal runaway due to positive temperature coefficient of RDS(on) and lack of SOA derating data beyond 10 ms pulses.
Is the PowerFLAT™ 2x2 package RoHS and REACH compliant?
Yes - STL3N10F7 is offered in ECOPACK®-compliant PowerFLAT™ 2x2 packaging, meeting RoHS Directive 2011/65/EU and REACH Regulation (EC) No. 1907/2006. Full compliance documentation, including material declarations and substance thresholds, is available on ST's official website under ECOPACK® grade definitions.
STL3N10F7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- DeepGATE™, STripFET™ VII
- Package/Case:
- 6-PowerWDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 70mOhm @ 2A, 10V
- Vgs(th) (Max) @ Id:
- 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 7.8 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 408 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.4W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerFlat™ (2x2)
STL3N10F7 FAQ
1.How can I place an order for STL3N10F7 through Aetrix?
Please submit a Request for Quotation (RFQ) for STL3N10F7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STL3N10F7 reliable?
The price and inventory of STL3N10F7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STL3N10F7 is usually 5 days.
3.What payment methods are accepted for STL3N10F7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STL3N10F7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STL3N10F7?
STL3N10F7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STL3N10F7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STL3N10F7?
For technical support, including STL3N10F7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STL3N10F7 requirements.
6.How does Aetrix verify that STL3N10F7 is sourced from the original manufacturer or authorized distributors?
All STL3N10F7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STL3N10F7 meets industry standards.
7.What is the process for return or replacement of STL3N10F7?
All STL3N10F7 units undergo pre-shipment inspection (PSI). If there is an issue with STL3N10F7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STL3N10F7 part is unused and in its original packaging.
Return procedure for STL3N10F7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
STL3N10F7 Tags

-
BSZ180P03NS3EGATMA1
Infineon Technologies

-
SIRA14DP-T1-GE3
Vishay Siliconix

-
AO4419
Alpha & Omega Semiconductor Inc.

-
SISA14BDN-T1-GE3
Vishay Siliconix

-
PSMN9R5-30YLC,115
Nexperia USA Inc.

-
BUK9Y21-40E,115
Nexperia USA Inc.

-
RTQ035N03HZGTR
Rohm Semiconductor

-
FDMS7680
onsemi

-
RQ3E180BNTB
Rohm Semiconductor

-
STL6N2VH5
STMicroelectronics

-
DMPH4029LFGQ-7
Diodes Incorporated

-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
