STMicroelectronics STL40DN3LLH5

Overview

STL40DN3LLH5 from STMicroelectronics is an automotive-grade dual N-channel 30 V Power MOSFET in PowerFLAT™ 5x6 double island package, featuring 0.016 Ω typ. R_DS(on) at V_GS = 10 V, 40 A continuous drain current at T_C = 25 °C, and AEC-Q101 qualification - deployed in high-efficiency DC-DC converters and motor control stages of ADAS power modules.

For engineers reviewing the STL40DN3LLH5 datasheet, STL40DN3LLH5 pinout, STL40DN3LLH5 application, or STL40DN3LLH5 equivalent, key selection criteria include its wettable flank PowerFLAT™ 5x6 package for automated optical inspection, low gate charge (4.5 nC), and high avalanche ruggedness enabling robust 12 V automotive load switching under transient overvoltage conditions.

Technical Context

This device implements ST's STripFET™ H5 silicon process to minimize conduction and switching losses simultaneously. Its dual-N-channel configuration supports synchronous rectification and half-bridge topologies, with gate threshold voltage tightly distributed between 1.0 V and 1.5 V for predictable turn-on behavior across temperature.

The PowerFLAT™ 5x6 double island WF package provides separate source and drain thermal islands, reducing thermal coupling and improving power cycling reliability. Junction-to-case thermal resistance is 3.0 °C/W, enabling high-power operation without a heatsink when mounted on a 1-inch² FR-4 PCB with 2 oz copper.

Key Specifications

Pinout & Package

STL40DN3LLH5 uses the PowerFLAT™ 5x6 double island WF type R package - a surface-mount, wettable flank outline with two isolated copper islands (drain and source) for enhanced thermal and electrical isolation. Dimensions: 5.0–5.4 mm × 6.0–6.2 mm × 0.8–1.0 mm height, with 0.65 mm pitch leads.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 30 V automotive power MOSFET applications.

Compared with BSC014N03LS and NTMFS4C09NT1G, STL40DN3LLH5 uniquely balances AEC-Q101 compliance, wettable flank manufacturability, and FoM (72 mΩ·nC), making it optimal for Tier-1 automotive electronics where zero-defect assembly and under-hood thermal resilience are non-negotiable.

Availability

STL40DN3LLH5 is available at Aetrix Electronics and suitable for automotive body control modules, electric power steering systems, ADAS camera power supplies, and start-stop system load disconnect circuits requiring stable component supply across extended product lifecycles.

Supply support for STL40DN3LLH5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for automotive, industrial, and consumer markets.

This device belongs to ST's STripFET™ H5 automotive power MOSFET family, engineered specifically for high-reliability 12 V vehicle networks - emphasizing low R_DS(on), fast switching, and robustness against load dump, reverse battery, and repetitive avalanche stress.

FAQ

What is the maximum allowable gate-source voltage for STL40DN3LLH5?

The absolute maximum V_GS rating is ±22 V, as specified in Table 2 of the official datasheet (DocID18416 Rev 7). Operation beyond this range risks permanent gate oxide damage. For reliable 12 V system design, gate drivers should clamp V_GS to ≤20 V with transient suppression, especially during cold-crank events.

Does STL40DN3LLH5 support synchronous rectification in buck converters?

Yes - its 0.016 Ω R_DS(on) at 10 V and 4.5 nC Q_g make it suitable as a low-side synchronous rectifier in 300 kHz–1 MHz buck regulators. The dual-source configuration reduces effective on-resistance and improves current sharing, while the 1.1 V forward diode voltage (V_SD) ensures low-loss freewheeling during dead time.

How does the PowerFLAT™ 5x6 double island package improve thermal performance?

The double island layout isolates drain and source copper pads, allowing independent thermal vias to inner ground/power planes. This reduces junction-to-PCB thermal resistance to 32 °C/W (vs. ~45 °C/W for single-island equivalents) and enables 4.7 W power dissipation directly into a 1-inch² FR-4 board - eliminating need for external heatsinks in most automotive applications.

Is STL40DN3LLH5 pin-compatible with other ST PowerFLAT™ 5x6 MOSFETs?

No - STL40DN3LLH5 has a unique dual-N-channel internal structure with shared gate and isolated drain/source terminals. It is not pin-compatible with single-channel variants (e.g., STL37N3LLH6) or dual-P-channel devices. PCB layout must follow Figure 19 footprint (DocID18416 Rev 7), including 4.15–4.45 mm D2 dimension and 0.65 mm lead pitch.