STMicroelectronics STL40N75LF3

Overview

STL40N75LF3 from STMicroelectronics is an N-channel enhancement-mode Power MOSFET using STripFET™ III technology, rated for 75 V drain-source voltage, 16 mΩ typical R_DS(on) at V_GS = 10 V and 20 A, and 10 A continuous current at PCB temperature of 25 °C. It operates in switching power stages of DC-DC converters, motor drivers, and load switches where low conduction loss and fast switching are critical.

For engineers reviewing the STL40N75LF3 datasheet, STL40N75LF3 pinout, STL40N75LF3 application, or STL40N75LF3 equivalent, key selection criteria include its 12 nC total gate charge, 1300 pF input capacitance, 35 ns reverse recovery time, and PowerFLAT™ 5x6 thermal performance with R_thj-pcb = 31.3 °C/W on FR-4.

Technical Context

This MOSFET employs ST's STripFET™ III process to simultaneously minimize R_DS(on) and gate charge-achieving 16 mΩ typ. at 10 V drive while maintaining low Q_g (12 nC) and Q_gd (5.3 nC). Its low 1 V gate threshold enables robust turn-on with 3.3 V or 5 V logic-level gate drivers.

The device integrates a fast-recovery body diode (t_rr = 35 ns, Q_rr = 44 nC) and supports unclamped inductive switching up to 160 A pulsed current. Thermal design leverages the exposed thermal pad of the PowerFLAT™ 5x6 package for direct PCB heat transfer.

Key Specifications

Pinout & Package

STL40N75LF3 uses the PowerFLAT™ 5x6 (Type C-B) surface-mount package with an exposed thermal pad on the bottom side for enhanced PCB heat sinking. The package measures 5.0 × 6.0 mm with 0.83 mm nominal height and features three terminals: Source (pins 1–3), Gate (pin 4), and Drain (exposed pad).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IRL3803PbF and STL100N75F7, STL40N75LF3 delivers optimal balance of low R_DS(on), low Q_g, and compact thermal packaging-making it ideal for 300–600 kHz DC-DC and motor drives where board area and driver efficiency are constrained.

Availability

STL40N75LF3 is available at Aetrix Electronics and suitable for DC-DC converters, brushed motor drivers, hot-swap controllers, and LED constant-current drivers requiring stable component supply across industrial production cycles.

Supply support for STL40N75LF3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs and discrete power devices for industrial, automotive, and consumer markets.

This device belongs to ST's STripFET™ Power MOSFET product line, engineered specifically for high-efficiency switching power conversion-emphasizing low R_DS(on), fast switching, and robust thermal performance in compact packages.

FAQ

What is the maximum continuous drain current for STL40N75LF3 under real PCB mounting conditions?

The datasheet specifies 10 A continuous drain current (I_D) at T_pcb = 25 °C on a 1-inch² FR-4 board with 2 oz copper. This rating reflects actual board-level thermal performance-not case temperature-and drops to 6 A at T_pcb = 100 °C. Derating curves in Figure 2 confirm safe operation up to 175 °C junction temperature.

Can STL40N75LF3 be driven directly by a 3.3 V microcontroller GPIO?

Yes. With a minimum gate threshold voltage (V_GS(th)) of 1 V and typical R_DS(on) fully achieved at V_GS = 5 V, the device turns on strongly with 3.3 V logic. Measured R_DS(on) at V_GS = 5 V is 18.7 mΩ (max), ensuring adequate conduction margin without external level shifting.

Does STL40N75LF3 include an integrated body diode, and what are its recovery characteristics?

Yes-it features a monolithic source-drain body diode optimized for fast recovery: t_rr = 35 ns and Q_rr = 44 nC at di/dt = 100 A/µs and T_j = 25 °C. These values are measured per Figure 15 test circuit and enable reliable synchronous rectification without external Schottky diodes in buck converters.

What is the recommended PCB footprint and thermal pad layout for PowerFLAT™ 5x6?

Per Figure 21, the recommended footprint uses a 4.20 × 3.48 mm thermal pad centered under the exposed drain, with 0.40 mm wide solder mask openings on all sides. Eight 0.35 mm thermal vias (filled or capped) should connect the pad to inner-layer ground planes to achieve R_thj-pcb ≤ 31.3 °C/W as specified.