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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STL47N60M6

Name: STL47N60M6
Brand: STMicroelectronics
SKU: STL47N60M6
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STL47N60M6

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: 8-PowerVDFN

Datasheet:: STL47N60M6.pdf

Description:: MOSFET N-CH 600V 31A PWRFLAT HV

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Product details

Overview

STL47N60M6 from STMicroelectronics is an N-channel 600 V, 31 A MDmesh™ M6 superjunction MOSFET in PowerFLAT™ 8x8 HV package, featuring 82 mΩ max R_DS(on), 100% avalanche tested, and Zener-protected gate. It delivers low switching losses and enhanced R_DS(on) × area efficiency for high-voltage industrial SMPS.

For engineers reviewing the STL47N60M6 datasheet, STL47N60M6 pinout, STL47N60M6 application, or STL47N60M6 equivalent, key selection criteria include dv/dt ruggedness (100 V/ns), C_oss,eq (390 pF), Q_g (52.2 nC), and thermal resistance junction-to-case (0.66 °C/W) in high-reliability power conversion designs.

Technical Context

This MOSFET employs ST's MDmesh™ M6 technology, combining optimized charge balance in the drift region with a dedicated driver source (pin 2) to reduce common-source inductance and improve switching control fidelity. Its 600 V V_(BR)DSS and 15 V/ns diode recovery dv/dt rating support robust operation in hard-switched PFC and LLC resonant converters.

The device integrates a Zener-protected gate structure and undergoes 100% unclamped inductive switching (UIS) testing up to 5.3 A avalanche current. Its low intrinsic gate resistance (1.4 Ω) and 2340 pF C_iss enable predictable gate drive design with minimal external compensation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_(BR)DSS	600 V - Withstands DC bus voltages up to 480 V in 400 V AC input systems with margin.
R_DS(on) max	82 mΩ at V_GS = 10 V, I_D = 15.5 A - Enables <1.3 W conduction loss at 31 A continuous drain current.
Q_g	52.2 nC - Determines gate drive power requirement and influences turn-on/turn-off timing predictability.
dv/dt ruggedness	100 V/ns - Ensures immunity to false triggering during fast voltage transients in high-side configurations.
R_thj-case	0.66 °C/W - Allows 190 W total dissipation at T_C = 25 °C; supports compact heatsink integration.
E_AS	800 mJ - Provides single-pulse avalanche energy handling without failure under transient overvoltage conditions.
C_oss,eq	390 pF - Defines output capacitance energy storage (E_OSS ≈ 56 µJ at 480 V), critical for ZVS design margin.

Pinout & Package

STL47N60M6 uses the PowerFLAT™ 8x8 HV thermally enhanced surface-mount package with exposed drain pad for low-inductance, high-current routing and direct PCB thermal coupling.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control input	Receives gate drive signal; low 1.4 Ω intrinsic resistance minimizes gate loop oscillation risk.
2 (Driver source)	Reference for gate driver	Separate Kelvin connection reduces source inductance impact on switching waveform fidelity.
3, 4 (Power source)	Main source current path	Parallel source terminals handle full 31 A continuous current with minimized IR drop.
5 (Drain)	Main power output	Exposed copper pad on bottom side serves as primary heat sink interface and high-current drain node.

Key Features

Feature	Design Value
MDmesh™ M6 silicon architecture	Reduces R_DS(on) × area by >25% vs prior MDmesh generations, enabling smaller die size without sacrificing voltage rating.
Dedicated driver source pin (pin 2)	Eliminates common-source inductance effect on gate control, improving dV/dt immunity and reducing switching overshoot.
Zener-protected gate	Integrated gate oxide protection clamps V_GS to ±25 V, preventing ESD-induced gate rupture during handling or layout.
100% UIS tested	Each unit validated for 5.3 A repetitive avalanche current, ensuring field reliability under short-circuit or overload stress.
Low C_oss,eq / C_rss ratio	390 pF / 3.7 pF ≈ 105 - Supports efficient zero-voltage switching in resonant topologies with reduced capacitive losses.

Applications

Industrial Switch-Mode Power Supplies

Server & Telecom Rectifiers

Use Scenario: Primary-side switch in 1–3 kW telecom rectifiers operating at 100–300 kHz with 400 V DC bus.

IC Role / Device Role / Timing Role: High-voltage power switch managing main energy transfer; operates in hard-switched or quasi-resonant mode.

Use Value: 82 mΩ R_DS(on) and 52.2 nC Q_g enable >95% efficiency at full load while maintaining thermal margin via 0.66 °C/W R_thj-case.

Use Scenario: Active clamp forward or LLC resonant converter in 2U server PSUs with 54 V output and 230 V AC input.

IC Role / Device Role / Timing Role: Main high-side switch; leverages 100 V/ns dv/dt ruggedness to withstand transformer leakage spikes.

Use Value: Driver source pin (pin 2) reduces gate ringing during 54.6 ns t_d(off), improving EMI performance and gate driver stability.

Solar Inverter DC-DC Stages

EV Onboard Charger PFC

Use Scenario: Boost stage switch in string inverters converting 600–1000 V PV array voltage to 800 V DC link.

IC Role / Device Role / Timing Role: Unidirectional high-voltage switch; handles 31 A continuous current with 124 A pulsed capability.

Use Value: 800 mJ E_AS withstands lightning-induced surges and grid fault transients without derating.

Use Scenario: Totem-pole PFC switch in 6.6 kW OBCs interfacing 230 V AC grid with 400 V battery system.

IC Role / Device Role / Timing Role: Fast-switching, bidirectional conduction-capable MOSFET; body diode used in reverse conduction phase.

Use Value: 281 ns t_rr and 3.67 µC Q_rr at 25 °C minimize reverse recovery losses during zero-crossing commutation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Infineon IPA60R125P7XKSA1	600 V, 125 mΩ typ., 24 A; TO-220FP package; no driver source pin.	Lacks Kelvin source; higher R_DS(on) increases conduction loss in high-current PFC stages.	Prefer when through-hole mounting and lower gate charge (34 nC) outweigh need for ultra-low R_DS(on).
ON Semiconductor FCH067N60F	600 V, 67 mΩ typ., 38 A; TO-247-3L; no integrated Zener protection.	Higher peak current rating but requires external gate protection; larger footprint limits board density.	Choose when maximum current headroom and legacy TO-247 thermal interface are prioritized over surface-mount integration.

Compared with IPA60R125P7XKSA1 and FCH067N60F, STL47N60M6 uniquely combines low-profile PowerFLAT™ 8x8 HV packaging, driver source pin for clean switching, and factory Zener gate protection-making it optimal for space-constrained, high-efficiency industrial SMPS where layout-induced dv/dt stress is a concern.

Availability

STL47N60M6 is available at Aetrix Electronics and suitable for industrial switch-mode power supplies, telecom rectifiers, solar inverter DC-DC stages, and EV onboard charger PFC circuits requiring stable component supply and long-term production continuity.

Supply support for STL47N60M6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

STL47N60M6 belongs to the MDmesh™ M6 superjunction MOSFET product line, engineered specifically for high-efficiency, high-power-density AC-DC and DC-DC conversion in industrial and renewable energy systems.

FAQ

What is the maximum continuous drain current for STL47N60M6 at 100 °C case temperature?

The maximum continuous drain current is 20 A at T_C = 100 °C, as specified in Table 1 of DS12382. This derating reflects thermal limitations of the PowerFLAT™ 8x8 HV package and ensures safe operation within the SOA boundary at elevated temperatures.

Does STL47N60M6 require external gate protection?

No. The device integrates Zener protection between gate and source, rated for ±25 V, eliminating the need for external TVS diodes in most applications. This is confirmed in the "Features" section and electrical characteristics table (I_GSS test condition).

How does the driver source pin (pin 2) differ from the power source pins (pins 3 and 4)?

Pin 2 is a dedicated Kelvin connection for gate driver reference, carrying only sensing current; pins 3 and 4 carry full load current. This separation prevents source inductance from distorting gate drive waveforms, directly improving switching consistency and dv/dt immunity.

Can STL47N60M6 be used in synchronous rectification topologies?

No-it is an N-channel enhancement-mode MOSFET optimized for high-side switching, not synchronous rectification. Its body diode has 281 ns t_rr and 3.67 µC Q_rr, which are unsuitable for low-loss freewheeling; dedicated SR controllers and logic-level FETs are required for that function.

STL47N60M6 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ M6

Package/Case:: 8-PowerVDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 31A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 80mOhm @ 15.5A, 10V

Vgs(th) (Max) @ Id:: 4.75V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 57 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: 189W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerFlat™ (8x8) HV

STL47N60M6 FAQ

1.How can I place an order for STL47N60M6 through Aetrix?

Please submit a Request for Quotation (RFQ) for STL47N60M6 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STL47N60M6 reliable?

The price and inventory of STL47N60M6 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STL47N60M6 is usually 5 days.

3.What payment methods are accepted for STL47N60M6?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STL47N60M6 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STL47N60M6?

STL47N60M6 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STL47N60M6 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STL47N60M6?

For technical support, including STL47N60M6 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STL47N60M6 requirements.

6.How does Aetrix verify that STL47N60M6 is sourced from the original manufacturer or authorized distributors?

All STL47N60M6 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STL47N60M6 meets industry standards.

7.What is the process for return or replacement of STL47N60M6?

All STL47N60M6 units undergo pre-shipment inspection (PSI). If there is an issue with STL47N60M6, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STL47N60M6 part is unused and in its original packaging.

Return procedure for STL47N60M6:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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