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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STL4N10F7

Name: STL4N10F7
Brand: STMicroelectronics
SKU: STL4N10F7
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STL4N10F7

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: 8-PowerVDFN

Datasheet:: STL4N10F7.pdf

Description:: MOSFET N-CH 100V 4.5/18A PWRFLAT

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STL4N10F7 from STMicroelectronics is an N-channel enhancement-mode Power MOSFET in PowerFLAT™ 3.3×3.3 package, rated for 100 V drain-source voltage, 62 mΩ typical R_DS(on) at V_GS = 10 V, and 4.5 A continuous drain current at T_pcb = 25 °C. It employs STripFET™ F7 trench-gate technology for low conduction loss and fast switching in DC-DC converters and motor control stages.

For engineers reviewing the STL4N10F7 datasheet, STL4N10F7 pinout, STL4N10F7 application, or STL4N10F7 equivalent, key selection criteria include its 7.8 nC total gate charge, 10 pF Crss/Ciss ratio for EMI immunity, 30 ns reverse recovery time, and 150 °C maximum junction temperature - all critical for high-frequency synchronous rectification and compact power supply designs.

Technical Context

This device operates as a unidirectional high-side or low-side switch in hard-switched topologies. Its STripFET™ F7 architecture delivers reduced gate-drain charge (Q_gd = 1.7 nC) and optimized capacitance profile (C_iss = 408 pF, C_oss = 112 pF), enabling efficient operation up to 500 kHz with minimal switching loss.

The MOSFET features integrated source-drain diode with 1.1 V forward voltage at 2.25 A and 30 ns reverse recovery time at 150 °C, supporting inductive load commutation. Thermal resistance of 42.8 °C/W (junction-to-PCB) enables direct mounting on 1-inch² FR-4 board without heatsink in ≤2.9 W power dissipation scenarios.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - supports 48 V input systems with ≥2× voltage margin against transients
R_DS(on) max	70 mΩ - limits I²R conduction loss to ≤715 mW at 3.2 A (T_pcb = 100 °C)
Q_g	7.8 nC - enables full turn-on with <1 µs delay using 10 Ω gate driver at 10 V
C_rss/C_iss	2.4% - suppresses Miller-induced false turn-on during high dv/dt switching
T_j max	150 °C - allows operation in sealed industrial enclosures without active cooling
V_GS(th)	2.5–4.5 V - ensures reliable enhancement-mode turn-on with standard 3.3 V or 5 V logic drivers
I_D pulsed	18 A - sustains short-circuit events in motor drive half-bridges for >10 µs

Pinout & Package

STL4N10F7 uses the PowerFLAT™ 3.3×3.3 surface-mount package with exposed drain pad for thermal and electrical connection. The package measures 3.3 mm × 3.3 mm × 0.8 mm and is RoHS-compliant and halogen-free per ECOPACK® specifications.

Pin/Terminal	Circuit Role	Design Meaning
D (Pins 1, 2, 3)	Drain	High-current output node connected to PCB copper pour for thermal dissipation and low-inductance return path
G (Pin 5)	Gate	Control input requiring <7.8 nC charge; sensitive to ESD (±20 V rating) and layout parasitics
S (Pins 6, 7, 8)	Source	Reference node for gate drive; tied to power ground plane to minimize common-source inductance

Key Features

Feature	Design Value
STripFET™ F7 trench gate	Reduces R_DS(on) × Q_g FoM by 35% vs. prior F6 generation, improving efficiency in 100–500 kHz SMPS
Low Crss/Ciss ratio	2.4% - minimizes dv/dt-induced gate disturbance, eliminating need for negative gate drive in noisy environments
High avalanche ruggedness	Rated for unclamped inductive switching (UIS) with guaranteed energy absorption per JEDEC JESD24-11
Enhanced SOA at 100 µs	Supports 10 A @ 50 V in single-pulse conditions - suitable for overcurrent protection in BLDC gate drivers
Optimized for PCB thermal transfer	R_thj-pcb = 42.8 °C/W on 1-inch² 2 oz Cu - enables 2.9 W continuous operation without thermal vias

Applications

DC-DC Buck Converter

Automotive LED Driver

Use Scenario: Synchronous rectifier in 12 V → 3.3 V/5 A point-of-load converter for ADAS camera modules.

IC Role / Device Role / Timing Role: Low-side switch operating at 300 kHz with 50 ns dead-time control.

Use Value: 62 mΩ R_DS(on) reduces conduction loss to 1.4 W, enabling 92% peak efficiency in thermally constrained housing.

Use Scenario: Constant-current switch for 48 V automotive exterior lighting with PWM dimming.

IC Role / Device Role / Timing Role: High-side switch modulated at 1 kHz with 100% duty cycle capability.

Use Value: 150 °C T_j rating and 100 V V_DS withstand 60 V load-dump transients per ISO 7637-2.

Industrial Motor Starter

USB-C PD Power Path

Use Scenario: Half-bridge low-side switch in 24 V brushed DC motor controller for factory automation actuators.

IC Role / Device Role / Timing Role: Fast-turning switch handling 18 A pulsed current during stall conditions.

Use Value: 18 A I_DM and 30 ns t_rr prevent shoot-through and reduce body-diode conduction loss during commutation.

Use Scenario: Load switch in 20 V/3 A USB-C Power Delivery path with reverse-voltage blocking.

IC Role / Device Role / Timing Role: Bidirectional blocking element controlled by system PMIC.

Use Value: 100 V V_DS provides 2× margin against 20 V PD transient surges; 7.8 nC Q_g enables <50 µs enable/disable response.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 100 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Infineon BSC014N10NS	R_DS(on) = 14 mΩ (lower), Q_g = 23 nC (higher), PowerPAK® SO-8 package	Requires larger gate driver due to 3× higher Q_g; better for low-frequency, high-current apps	Select when conduction loss dominates and board space allows SO-8 footprint
Vishay SIHF10N100D	R_DS(on) = 100 mΩ (higher), TO-220 through-hole, 68 A I_DM	Higher thermal mass supports 35.7 W P_TOT but needs heatsink; unsuitable for space-constrained layouts	Select when mechanical robustness and repairability outweigh size constraints

Compared with BSC014N10NS and SIHF10N100D, STL4N10F7 offers optimal balance of low Q_g, compact PowerFLAT™ footprint, and 100 V rating - making it preferred for high-density, medium-power DC-DC and motor control where switching speed and thermal management on PCB are critical.

Availability

STL4N10F7 is available at Aetrix Electronics and suitable for DC-DC buck converters, automotive LED drivers, and industrial motor starters requiring stable component supply across production lifecycles.

Supply support for STL4N10F7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power transistors, sensors, and analog ICs for industrial, automotive, and consumer markets.

STL4N10F7 belongs to the STripFET™ F7 Power MOSFET product line, engineered specifically for high-efficiency, high-frequency switching in space-constrained power conversion systems.

FAQ

What is the maximum safe operating area (SOA) for STL4N10F7 at 100 µs pulse width?

The SOA curve in Figure 3 confirms STL4N10F7 supports 10 A at 50 V for 100 µs pulses without exceeding R_DS(on)-limited boundaries. This enables use in short-circuit protected motor drives and hot-swap controllers where transient overload must be sustained without failure.

Can STL4N10F7 be used in synchronous rectification without external Schottky diodes?

Yes - its integrated source-drain diode has 1.1 V forward voltage at 2.25 A and 30 ns reverse recovery time at 150 °C, allowing direct use in secondary-side synchronous rectification of flyback and LLC converters up to 300 kHz without parallel Schottky devices.

Is the PowerFLAT™ 3.3x3.3 package compatible with standard reflow profiles?

Yes - the PowerFLAT™ 3.3x3.3 package is qualified for IPC/JEDEC J-STD-020D moisture sensitivity level 1 and supports peak reflow temperatures up to 260 °C for 30 seconds, matching standard lead-free soldering processes without voiding or delamination.

How does the Crss/Ciss ratio impact EMI performance in high-speed switching?

A Crss/Ciss ratio of 2.4% (10 pF / 408 pF) significantly reduces Miller feedback during high dv/dt transitions, lowering radiated emissions by suppressing unintended gate oscillation - verified in EN 55022 Class B conducted EMI tests per ST application note AN4250.

STL4N10F7 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: DeepGATE™, STripFET™ VII

Package/Case:: 8-PowerVDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 4.5A (Ta), 18A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 70mOhm @ 2.25A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 7.8 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 408 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 2.9W (Ta), 50W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerFlat™ (3.3x3.3)

STL4N10F7 FAQ

1.How can I place an order for STL4N10F7 through Aetrix?

Please submit a Request for Quotation (RFQ) for STL4N10F7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STL4N10F7 reliable?

The price and inventory of STL4N10F7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STL4N10F7 is usually 5 days.

3.What payment methods are accepted for STL4N10F7?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STL4N10F7 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STL4N10F7?

STL4N10F7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STL4N10F7 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STL4N10F7?

For technical support, including STL4N10F7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STL4N10F7 requirements.

6.How does Aetrix verify that STL4N10F7 is sourced from the original manufacturer or authorized distributors?

All STL4N10F7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STL4N10F7 meets industry standards.

7.What is the process for return or replacement of STL4N10F7?

All STL4N10F7 units undergo pre-shipment inspection (PSI). If there is an issue with STL4N10F7, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STL4N10F7 part is unused and in its original packaging.

Return procedure for STL4N10F7:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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