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STMicroelectronics STL4N80K5

Part No.:
STL4N80K5
Manufacturer:
STMicroelectronics
Category:
FETs, MOSFETs
Package:
8-PowerVDFN
Datasheet:
AetrixSTL4N80K5.pdf
Description:
MOSFET N-CH 800V 2.5A POWERFLAT
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:6,000

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Product details

Overview

STL4N80K5 from STMicroelectronics is an N-channel 800 V, 2.5 A Power MOSFET in PowerFLAT™ 5x6 VHV package, fabricated with MDmesh™ K5 vertical superjunction technology. It delivers 2.1 Ω typ. RDS(on), 10.5 nC total gate charge, and 74.5 mJ single-pulse avalanche energy-enabling high-voltage switching in compact industrial SMPS and LED drivers.

For engineers reviewing the STL4N80K5 datasheet, STL4N80K5 pinout, STL4N80K5 application, or STL4N80K5 equivalent, key selection criteria include its 800 V VDS, ultra-low Qg/RDS(on) FoM, Zener-protected gate, 100% avalanche-tested ruggedness, and thermal resistance of 3.3 °C/W (j-case).

Technical Context

This device employs ST's MDmesh™ K5 process to achieve a vertical superjunction structure that reduces specific on-resistance by >30% versus prior K3/K4 generations while maintaining low output capacitance (Coss = 20 pF) and fast switching (td(off) = 36 ns, tf = 21 ns). Its built-in back-to-back Zener diodes provide ±30 V gate-source ESD protection without external components.

The PowerFLAT™ 5x6 VHV package features exposed drain pads on pins 5–8 for low-inductance, high-current conduction and thermal path optimization. Safe operating area (SOA) is validated up to 100 µs at TC = 25 °C, supporting repetitive unclamped inductive switching in offline converters.

Key Specifications

Parameter Value and Actual Design Meaning
VDS 800 V - supports primary-side switching in universal-input (85–265 VAC) offline flyback and PFC stages without derating.
RDS(on) max 2.5 Ω @ VGS = 10 V, ID = 1.5 A - enables <1.9 W conduction loss at 1.5 A, critical for thermally constrained 5x6 mm² layouts.
Qg 10.5 nC - reduces gate drive power and enables use of low-cost 100 mA gate drivers in high-frequency (>100 kHz) topologies.
EAS 74.5 mJ @ Tj = 25 °C - ensures reliable operation under unclamped inductive load transients in motor control and relay drivers.
Rth(j–case) 3.3 °C/W - allows 38 W continuous dissipation at TC = 25 °C, supporting high-power density designs without heatsinks below 15 W output.
V(BR)GSO 30 V - integrated Zener clamps gate voltage during fast dv/dt events, eliminating need for external gate protection networks.

Pinout & Package

STL4N80K5 uses the PowerFLAT™ 5x6 VHV package: surface-mount, 8-terminal, exposed drain pad (pins 5–8), with pin 1 marked on top view. The package provides low-profile (1.0 mm max height), high thermal conductivity, and optimized parasitic inductance for high-speed switching.

Pin/Terminal Circuit Role Design Meaning
1, 2, 3 Source Low-inductance source connection; tied to PCB ground plane via three parallel terminals to minimize switching loop inductance.
4 Gate Single-point gate input; requires RC snubber only if layout exceeds 10 mm trace length due to low Qgd/Qgs ratio (3.75).
5, 6, 7, 8 Drain Exposed copper drain pad; must be soldered to large copper pour for thermal and current handling-supports 2.5 A continuous and 10 A pulsed.

Key Features

Feature Design Value
MDmesh™ K5 superjunction architecture Reduces RDS(on) × area by 40% vs. K3, enabling higher power density in same 5x6 mm footprint.
Zener-protected gate Integrated ±30 V gate-source Zener eliminates external TVS, reducing BOM count and layout area in space-constrained designs.
100% avalanche tested Each unit undergoes unclamped inductive switching test to 74.5 mJ, guaranteeing ruggedness in real-world overvoltage events.
Ultra-low Coss (20 pF) Minimizes turn-off losses and improves efficiency in hard-switched topologies above 65 kHz.
Low Qgd/Qgs ratio (3.75) Improves Miller immunity and enables stable operation with minimal gate resistance (4.7 Ω typical) in high-dv/dt environments.

Applications

Industrial SMPS LED Driver Secondary Side

Use Scenario: 30–60 W offline flyback converter for factory automation sensors.

IC Role / Device Role / Timing Role: Primary-side high-voltage switch controlling energy transfer at 65 kHz.

Use Value: 2.1 Ω RDS(on) and 10.5 nC Qg reduce total switching + conduction loss to <1.2 W, enabling fanless enclosure design.

Use Scenario: Constant-current buck-boost LED driver for street lighting (24–48 V output, 700 mA).

IC Role / Device Role / Timing Role: Synchronous rectifier switch replacing Schottky diode in secondary-side regulation loop.

Use Value: 1.5 V VSD forward drop at 2.5 A cuts rectifier loss by 65% vs. 0.7 V Schottky, improving system efficiency from 89% to 92.5%.

AC-DC Adapter Primary Switch DC-DC Isolated Gate Driver Stage

Use Scenario: Universal-input (90–264 VAC), 25 W USB-C PD adapter with QR flyback topology.

IC Role / Device Role / Timing Role: Main power switch operating in quasi-resonant mode with peak VDS = 720 V.

Use Value: 50 V/ns MOSFET dv/dt ruggedness prevents false turn-on during transformer leakage spikes, eliminating need for active clamp.

Use Scenario: High-side gate driver stage in half-bridge IGBT module for HVAC inverter (1 kW).

IC Role / Device Role / Timing Role: Level-shifting high-side switch driving bootstrap capacitor recharge path.

Use Value: 800 V VDS rating safely withstands 600 V bus transients during IGBT short-circuit events, ensuring driver reliability.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
STP4NK80ZFP 800 V, 4.5 Ω RDS(on), TO-220FP package, no integrated Zener, 300 mJ EAS Higher conduction loss (2.3×), larger footprint, requires external gate protection Select when cost sensitivity outweighs size/efficiency needs and through-hole assembly is preferred.
FQP8N80C 800 V, 1.4 Ω RDS(on), TO-3P package, no Zener, 250 mJ EAS, higher Qg (42 nC) Lower RDS(on) but 4× higher gate charge increases driver loss and slows switching Select only for low-frequency (<50 kHz), high-current linear-regulator-like operation where Qg impact is negligible.

Compared with STL4N80K5, STP4NK80ZFP trades efficiency and integration for lower unit cost and legacy compatibility, while FQP8N80C prioritizes on-resistance over switching speed and gate drive simplicity-making STL4N80K5 optimal for compact, high-frequency, high-reliability SMPS.

Availability

STL4N80K5 is available at Aetrix Electronics and suitable for industrial SMPS, LED drivers, and AC-DC adapters requiring stable component supply, long-lifecycle support, and RoHS-compliant packaging.

Supply support for STL4N80K5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

This device belongs to ST's MDmesh™ K5 high-voltage Power MOSFET product line, engineered specifically for high-efficiency, high-power-density offline switching applications where low RDS(on) × Qg FoM and avalanche ruggedness are critical.

FAQ

What is the maximum continuous drain current for STL4N80K5 at 100 °C case temperature?

The maximum continuous drain current is 1.55 A at TC = 100 °C, as specified in Table 2 of the datasheet. This derating reflects thermal limits of the PowerFLAT™ 5x6 VHV package and ensures safe junction temperature operation within the 150 °C maximum rating under sustained load conditions.

Does STL4N80K5 require an external gate resistor for stability in hard-switched circuits?

A 4.7 Ω gate resistor is recommended per Figure 15 test circuit for resistive loads, balancing switching speed and ringing suppression. Layout-dependent parasitics may necessitate adjustment between 2.2 Ω and 10 Ω, but the low Qgd/Qgs ratio (3.75) inherently improves Miller immunity without mandatory external damping.

Can STL4N80K5 replace a 600 V MOSFET in an existing 400 V DC bus design?

Yes-its 800 V VDS rating provides 100% margin over 400 V bus operation, allowing direct substitution without derating. However, verify SOA curves for pulse conditions and confirm gate drive voltage compatibility (10 V required for full RDS(on) specification).

Is the PowerFLAT™ 5x6 VHV package compatible with standard reflow profiles for lead-free assembly?

Yes-the package is qualified for JEDEC J-STD-020D MSLE Level 3 moisture sensitivity and supports standard Pb-free reflow profiles (peak 260 °C, 10 s max). Thermal pad soldering requires ≥75% void-free coverage on the exposed drain area to maintain Rth(j–case) = 3.3 °C/W performance.

STL4N80K5 Specifications

Product attributes
Attribute value
Manufacturer:
STMicroelectronics
Series:
SuperMESH5™
Package/Case:
8-PowerVDFN
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
800 V
Current - Continuous Drain (Id) @ 25°C:
2.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
2.5Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id:
5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:
10.5 nC @ 10 V
Vgs (Max):
±30V
Input Capacitance (Ciss) (Max) @ Vds:
175 pF @ 100 V
FET Feature:
-
Power Dissipation (Max):
38W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PowerFlat™ (5x6)

STL4N80K5 FAQ

1.How can I place an order for STL4N80K5 through Aetrix?

Please submit a Request for Quotation (RFQ) for STL4N80K5 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STL4N80K5 reliable?

The price and inventory of STL4N80K5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STL4N80K5 is usually 5 days.

3.What payment methods are accepted for STL4N80K5?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STL4N80K5 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STL4N80K5?

STL4N80K5 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STL4N80K5 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STL4N80K5?

For technical support, including STL4N80K5 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STL4N80K5 requirements.

6.How does Aetrix verify that STL4N80K5 is sourced from the original manufacturer or authorized distributors?

All STL4N80K5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STL4N80K5 meets industry standards.

7.What is the process for return or replacement of STL4N80K5?

All STL4N80K5 units undergo pre-shipment inspection (PSI). If there is an issue with STL4N80K5, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STL4N80K5 part is unused and in its original packaging.

Return procedure for STL4N80K5:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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