STMicroelectronics STL50DN6F7

Overview

STL50DN6F7 from STMicroelectronics is a dual N-channel 60 V Power MOSFET in PowerFLAT™ 5x6 double island package, delivering 9 mΩ typ. R_DS(on) at V_GS = 10 V and 57 A continuous drain current at T_C = 25 °C. It features low Cr_ss/C_iss ratio (53/1035 pF) for EMI immunity and high avalanche ruggedness, deployed in high-efficiency DC-DC converters and motor control half-bridges.

For engineers reviewing the STL50DN6F7 datasheet, STL50DN6F7 pinout, STL50DN6F7 application, or STL50DN6F7 equivalent, key selection criteria include its 60 V V_DS, 9 mΩ R_DS(on), 17 nC total gate charge, thermal resistance of 2.4 °C/W (j-case), and dual-channel layout enabling compact synchronous rectification or phase-leg switching.

Technical Context

This device implements STripFET™ F7 trench-gate technology to minimize conduction and switching losses simultaneously. Its dual-die configuration shares common source terminals and isolated drain islands, supporting independent gate drive while maintaining low parasitic inductance in high-frequency hard-switching topologies.

The internal structure enables fast switching with t_d(on) = 14.5 ns and t_f = 8 ns under 4.7 Ω gate resistance, and supports unclamped inductive load operation up to 228 A pulsed drain current with robust avalanche energy rating per datasheet Figure 2 (SOA curve).

Key Specifications

Pinout & Package

STL50DN6F7 uses the PowerFLAT™ 5x6 double island package (Type R), featuring two electrically isolated drain pads (D1, D2), shared source terminals (S1/S2 tied internally), and separate gate terminals (G1, G2). The thermally enhanced layout places both drain islands on the bottom side for direct PCB copper thermal spreading.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel 60 V power MOSFET applications.

Compared with IRF7759L2TRPBF and DMTH6006LPSQ-13, STL50DN6F7 uniquely integrates dual channels with common-source topology and industry-leading FoM, offering optimal balance of conduction loss, switching speed, and PCB area in space-constrained 48 V systems.

Availability

STL50DN6F7 is available at Aetrix Electronics and suitable for DC-DC converters, BLDC motor drives, automotive body control modules, and industrial solid-state relays requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for STL50DN6F7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, designing and manufacturing microcontrollers, power transistors, sensors, and analog ICs for industrial, automotive, and consumer markets.

STL50DN6F7 belongs to the STripFET™ F7 Power MOSFET product line, engineered specifically for high-frequency, high-efficiency power conversion in space- and thermal-constrained applications such as server VRMs and e-bike controllers.

FAQ

What is the maximum allowable PCB temperature for continuous operation?

The datasheet specifies I_D = 11 A continuous at T_pcb = 100 °C, based on R_thj-pcb = 31.3 °C/W for a 1 in² FR-4 board with 2 oz Cu. Exceeding this temperature requires derating per Figure 3 (thermal impedance vs time) or improved copper area/thermal vias.

Can STL50DN6F7 be used in linear mode (constant current regulation)?

No - it is not characterized or rated for linear-mode operation. The Safe Operating Area (Figure 2) shows limited DC capability beyond 10 A at V_DS > 10 V. For constant-current applications, use dedicated linear regulators or MOSFETs explicitly specified for analog operation.

Is the internal source connection between S1 and S2 accessible externally?

No - S1 and S2 are bonded together internally and exit the package via a single source terminal (pin 3 in footprint). External separation is not possible; the device functions as a true common-source dual switch, not two independent MOSFETs.

Does STL50DN6F7 support paralleling multiple units for higher current?

Yes - its positive temperature coefficient of R_DS(on) (Figure 10) ensures inherent current sharing. However, layout symmetry (matched gate and source inductance) is critical; mismatch >10% in gate loop inductance may cause dynamic current imbalance during switching transitions.