STMicroelectronics STL50N6F7

Overview

STL50N6F7 from STMicroelectronics is an N-channel 60 V, 9 mΩ typ. (11 mΩ max), 60 A Power MOSFET in PowerFLAT™ 5x6 package, designed for high-efficiency switching in DC-DC converters and motor control stages where low conduction loss and fast switching are critical.

For engineers reviewing the STL50N6F7 datasheet, STL50N6F7 pinout, STL50N6F7 application, or STL50N6F7 equivalent, key selection factors include R_DS(on) at 10 V gate drive, Crss/Ciss ratio for EMI robustness, avalanche ruggedness rating, thermal resistance junction-to-PCB (31.3 °C/W), and safe operating area under pulsed drain current up to 240 A.

Technical Context

This device employs STripFET™ F7 trench-gate technology to achieve ultra-low R_DS(on) while reducing gate charge (Q_g = 17 nC) and reverse transfer capacitance (Crss = 53 pF). Its low Crss/Ciss ratio improves noise immunity during high-dV/dt switching.

The MOSFET supports continuous drain current up to 60 A at T_C = 25 °C and 43 A at T_C = 100 °C, with unclamped inductive switching capability validated per Figure 16–17. Junction temperature range spans –55 to +175 °C, enabling operation in automotive under-hood and industrial power stages.

Key Specifications

Pinout & Package

STL50N6F7 uses a 5-pin PowerFLAT™ 5x6 type R package with exposed drain pad (pins 1–3 = source, pin 4 = gate, pin 5 = drain). The thermally enhanced bottom-side drain pad requires soldered PCB thermal land for rated power dissipation.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 60 V power MOSFET applications.

Compared with IRF7470PBF and IXTP50N065T, STL50N6F7 delivers optimal balance of low R_DS(on), low Q_g, compact PowerFLAT™ 5x6 footprint, and industry-leading Crss/Ciss ratio-making it preferred for space-constrained, high-frequency, noise-sensitive power stages.

Availability

STL50N6F7 is available at Aetrix Electronics and suitable for motor drives, DC-DC converters, automotive LED lighting, and industrial UPS inverters requiring stable component supply and long-term production continuity.

Supply support for STL50N6F7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for automotive, industrial, and consumer markets.

The STL50N6F7 belongs to ST's STripFET™ F7 Power MOSFET product line, engineered specifically for high-efficiency, high-frequency switching in space-constrained power conversion systems where thermal management and EMI resilience are critical.

FAQ

What is the maximum continuous drain current at PCB temperature of 100 °C?

The STL50N6F7 supports 11 A continuous drain current when mounted on an FR-4 PCB at T_pcb = 100 °C, as specified in Table 2 (ID(3)). This rating is derived from its R_thj-pcb = 31.3 °C/W and maximum junction temperature of 175 °C, ensuring safe operation without heatsinking in thermally optimized layouts.

Does STL50N6F7 have avalanche capability, and is it tested?

Yes, STL50N6F7 is rated for unclamped inductive switching (UIS) with validated avalanche ruggedness. Figure 16–17 in the datasheet define the test circuit and waveform, confirming reliable operation under repetitive avalanche conditions-critical for motor drive and UPS applications where inductive energy must be safely absorbed.

Can STL50N6F7 be used in synchronous rectification mode?

Yes, the integrated body diode has V_SD = 1.2 V at 15 A and t_rr = 26.8 ns, enabling effective synchronous rectification in buck and flyback topologies. However, its relatively high forward voltage compared to Schottky diodes means efficiency gains are most pronounced above ~5 A load current and moderate switching frequencies.

What is the recommended PCB footprint for thermal performance?

The recommended footprint is defined in Figure 20: a 4.8 mm × 4.8 mm thermal pad with 0.4 mm solder mask opening, surrounded by 0.3 mm wide traces connecting pins 1–3 (source) and pin 4 (gate). Use ≥2 oz copper and thermal vias under the drain pad to achieve the specified R_thj-pcb = 31.3 °C/W on 1 in² FR-4.