STMicroelectronics STL52DN4LF7AG

Overview

STL52DN4LF7AG from STMicroelectronics is an automotive-grade dual N-channel 40 V Power MOSFET in PowerFLAT™ 5x6 double island package, featuring 9 mΩ typ. R_DS(on) at V_GS = 10 V, 18 A continuous drain current, and AEC-Q101 qualification. It delivers high avalanche ruggedness and low Cr_ss/C_iss ratio for EMI immunity, enabling use in high-efficiency DC-DC converters and motor control stages in engine management systems.

For engineers reviewing the STL52DN4LF7AG datasheet, STL52DN4LF7AG pinout, STL52DN4LF7AG application, or STL52DN4LF7AG equivalent, key selection criteria include its 2.3 °C/W junction-to-case thermal resistance, 9.4 nC total gate charge, wettable flank package for automated optical inspection, and dual-channel layout supporting half-bridge or synchronous rectifier topologies.

Technical Context

This device implements STripFET™ F7 trench-gate technology with enhanced cell density to minimize conduction losses while reducing gate charge and output capacitance. Its dual N-channel configuration shares a common source connection internally, supporting high-side/low-side switching in compact power stages.

The PowerFLAT™ 5x6 double island WF package features two isolated copper islands for independent drain connections, enabling separate thermal paths and reduced parasitic inductance. The wettable flank structure ensures reliable solder joint inspection under automated AOI systems.

Key Specifications

Pinout & Package

STL52DN4LF7AG uses the PowerFLAT™ 5x6 double island WF type R package - a surface-mount, wettable flank, thermally enhanced leadless package with two isolated drain islands and three external terminals (G1, S, G2). The package provides dual-channel integration in a 5.0 mm × 6.0 mm footprint with 0.8 mm height and exposed thermal pads on both drain islands.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel automotive MOSFET applications.

Compared with BSC028N06NS3 and NTMFS5C673NL, STL52DN4LF7AG uniquely combines AEC-Q101 compliance, dual-channel integration in a wettable-flank 5x6 package, and optimized FoM for 40 V automotive switching-reducing board area by ~30% and eliminating inter-device timing skew in half-bridge configurations.

Availability

STL52DN4LF7AG is available at Aetrix Electronics and suitable for engine control units, HVAC motor controllers, and 48 V DC-DC converter designs requiring stable component supply, automotive qualification, and high-reliability thermal performance.

Supply support for STL52DN4LF7AG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power transistors, sensors, and analog ICs for automotive, industrial, and consumer markets.

This device belongs to ST's STripFET™ F7 automotive power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in 12 V and 48 V vehicle electrical architectures with stringent thermal and qualification requirements.

FAQ

What is the maximum allowable junction temperature for STL52DN4LF7AG?

The device has an operating junction temperature range of –55 °C to 175 °C, validated per AEC-Q101 stress testing. At 175 °C, R_DS(on) increases to ~2× its 25 °C value (≈32 mΩ), and safe operating area is constrained by thermal limits-not electrical ratings-beyond 150 °C.

Does STL52DN4LF7AG support synchronous rectification in buck converters?

Yes-its dual N-channel topology, low 9 mΩ R_DS(on), and fast 5 ns rise time make it suitable for synchronous rectification when used with external gate timing control. The common-source configuration simplifies driver design compared to discrete high-side/low-side pairs.

Is the PowerFLAT™ 5x6 double island package compatible with standard reflow profiles?

Yes-the package is qualified for standard lead-free reflow per JEDEC J-STD-020, with peak temperature up to 260 °C. Its wettable flank geometry maintains coplanarity within ±0.05 mm, ensuring consistent solder joint formation across all terminals without tombstoning.

How does the Cr_ss/C_iss ratio impact EMI performance?

A low Cr_ss/C_iss ratio (≈4%) reduces Miller feedback during switching transitions, minimizing unintended gate oscillation and dV/dt-induced shoot-through. This directly lowers radiated emissions in high-frequency automotive power stages without requiring additional gate resistors or snubbers.