STMicroelectronics STL52N25M5

Overview

STL52N25M5 from STMicroelectronics is an N-channel 250 V, 28 A PowerFLAT™ (5×6) MDmesh™ V Power MOSFET with R_DS(on) = 0.064 Ω (typ), 15 V/ns dv/dt capability, and 100% avalanche tested. It delivers ultra-low conduction loss and high switching efficiency in compact surface-mount form, targeting high-density DC-DC converters and industrial motor drives.

For engineers reviewing the STL52N25M5 datasheet, STL52N25M5 pinout, STL52N25M5 application, or STL52N25M5 equivalent, key selection criteria include its 250 V V_DSS, 0.064 Ω R_DS(on) at 10 V_GS, 112 A pulsed drain current, 1.14 °C/W R_thj-case, and PowerFLAT™ (5×6) thermal performance in space-constrained power stages.

Technical Context

This MDmesh™ V device uses ST's proprietary vertical silicon process combined with PowerMESH™ horizontal layout to achieve industry-leading R_DS(on) × area ratio. Its 250 V breakdown voltage and 15 V/ns dv/dt rating support robust operation in hard-switched topologies with fast voltage transients.

The MOSFET features low gate charge (Q_g = 47 nC), low output capacitance energy-related C_o(er) = 93 pF, and fast switching times (t_r(v) = 40 ns, t_f(i) = 18 ns), enabling high-frequency operation up to 500 kHz while maintaining low switching losses.

Key Specifications

Pinout & Package

STL52N25M5 uses the PowerFLAT™ (5×6) package: a 5 mm × 6 mm, 1 mm max height, dual-side cooled surface-mount package with exposed drain pad for optimal thermal transfer. Pin 1 = Gate, Pin 2 = Source, Pin 3 = Drain (exposed pad).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with IPP50R250CFD7 and SIHF25N25A, STL52N25M5 uniquely combines 250 V rating, 0.064 Ω R_DS(on), 1.14 °C/W thermal resistance, and guaranteed avalanche capability in a 5×6 mm footprint-making it the sole choice for high-efficiency, space-limited 250 V switching where reliability under transient stress is non-negotiable.

Availability

STL52N25M5 is available at Aetrix Electronics and suitable for industrial motor drives, server DC-DC converters, and photovoltaic inverters requiring stable component supply, long-term lifecycle assurance, and consistent parametric performance across production batches.

Supply support for STL52N25M5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

The STL52N25M5 belongs to ST's MDmesh™ V Power MOSFET product line, engineered specifically for high-efficiency, high-power-density switching applications in 200–250 V DC systems where low R_DS(on), fast switching, and avalanche ruggedness are essential.

FAQ

Is STL52N25M5 suitable for gate-drive voltages below 10 V?

No. The device is specified for R_DS(on) at V_GS = 10 V, and its gate threshold voltage (V_GS(th)) ranges from 3 V to 5 V. Driving at 5 V yields significantly higher R_DS(on) (>0.15 Ω), increasing conduction loss by >130%. Use only with 10 V–15 V gate drive for rated performance.

What is the maximum recommended PCB copper area for the PowerFLAT™ (5×6) drain pad?

ST recommends a minimum 200 mm² (e.g., 10 mm × 20 mm) of 2 oz copper connected directly to the exposed drain pad via ≥6 thermal vias (0.3 mm diameter, filled). This achieves the 1.14 °C/W R_thj-case rating; smaller areas increase thermal resistance proportionally and risk exceeding 150 °C junction temperature at full 28 A load.

Does STL52N25M5 require a gate resistor for stability in hard-switched applications?

Yes. A 4.7 Ω series gate resistor is used in ST's reference test circuit (Figure 13) to limit peak gate current and damp ringing. Omitting it risks oscillation due to gate-drain capacitance (C_rss = 17 pF) interacting with PCB inductance, especially at >200 kHz switching frequencies.

Can STL52N25M5 replace older STL52N25 in existing designs?

Yes, with verification. STL52N25M5 supersedes STL52N25 (Rev 1), offering improved R_DS(on) (0.064 Ω vs 0.070 Ω typ), tighter parameter distribution, and updated avalanche testing. Pinout, package, and absolute maximum ratings are identical-no layout change is needed.