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STMicroelectronics STL52N60DM6
- Part No.:
- STL52N60DM6
- Manufacturer:
- STMicroelectronics
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerVDFN
- Datasheet:
-
STL52N60DM6.pdf
- Description:
- N-CHANNEL 600 V, 0.084 OHM TYP.,
- Quantity:
- Payment:
- Shipping:
Inventory:2,460
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Product details
Overview
STL52N60DM6 from STMicroelectronics is a high-voltage N-channel Power MOSFET in the MDmesh DM6 series, featuring 600 V VDS, 72 mΩ typ. RDS(on) at VGS = 10 V, 45 A continuous drain current at TC = 25 °C, fast-recovery body diode (trr = 134 ns), and Zener-protected gate. It enables high-efficiency ZVS phase-shift converters and hard-switched bridge topologies in industrial SMPS.
For engineers reviewing the STL52N60DM6 datasheet, STL52N60DM6 pinout, STL52N60DM6 application, or STL52N60DM6 equivalent, key selection criteria include dv/dt ruggedness (100 V/ns), low Qgd (19 nC), Coss,eq (416 pF), avalanche energy rating (690 mJ), and the dedicated driver source (pin 2) for gate loop optimization.
Technical Context
This MOSFET employs ST's MDmesh DM6 superjunction architecture optimized for high-voltage switching with minimized recovery charge (Qrr = 0.78 µC) and ultra-low RDS(on) per die area. Its fast-recovery body diode supports synchronous rectification and reduces snubber losses in resonant topologies.
The PowerFLAT 8x8 HV package integrates five terminals-drain (pin 5), gate (pin 1), driver source (pin 2), and dual power source (pins 3 & 4)-enabling Kelvin-source sensing to decouple gate drive from high-current source return paths, thereby improving switching stability and reducing EMI.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 600 V - Withstands DC bus voltages up to 480 V in ZVS converters with 20% margin. |
| RDS(on) max | 84 mΩ - Ensures <1.9 W conduction loss at 45 A, enabling compact thermal design. |
| Qg | 52 nC - Enables efficient 100–300 kHz switching with standard gate drivers (e.g., STGAP2S). |
| trr | 134 ns - Reduces reverse recovery loss and diode-induced voltage spikes in bridge legs. |
| dv/dt ruggedness | 100 V/ns - Sustains rapid voltage transients during hard switching without false turn-on. |
| EAS | 690 mJ - Supports unclamped inductive switching in PFC and LLC primary-side operation. |
| RthJC | 0.72 °C/W - Allows >150 W power dissipation with moderate heatsinking on PCB copper. |
Pinout & Package
STL52N60DM6 uses the PowerFLAT 8x8 HV type A surface-mount package (8.0 × 8.0 × 0.85 mm), optimized for high-power density and low-inductance layout. The exposed drain pad (pin 5) serves as both electrical terminal and thermal path to PCB copper.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Gate | High-impedance control input; requires low-inductance routing to minimize ringing. |
| Pin 2 | Driver Source | Kelvin connection for gate driver return-decouples gate loop from high di/dt source current. |
| Pins 3 & 4 | Power Source | Parallel high-current source terminals; must be routed with equal low-inductance paths to minimize imbalance. |
| Pin 5 | Drain | Exposed thermal pad and main high-voltage output node; soldered directly to large copper pour. |
Key Features
| Feature | Design Value |
|---|---|
| Fast-recovery body diode | trr = 134 ns and Qrr = 0.78 µC at 25 °C-reduces cross-conduction loss in half-bridge freewheeling. |
| Dual source configuration | Separate driver source (pin 2) and power source (pins 3,4)-eliminates gate drive disturbance from load current transients. |
| Zener-protected gate | ±25 V VGS rating with integrated gate oxide protection-prevents ESD damage during assembly and operation. |
| 100% avalanche tested | Single-pulse EAS = 690 mJ at TJ = 25 °C-guarantees robustness under transient overvoltage conditions. |
| Low Coss,eq | 416 pF across 0–480 V-minimizes capacitive turn-off loss and improves light-load efficiency in resonant converters. |
Applications
| Industrial SMPS | Server & Telecom PSU |
|---|---|
|
Use Scenario: Primary-side switch in 3.5 kW telecom rectifier with phase-shifted full-bridge topology. IC Role / Device Role / Timing Role: High-side switching element operating at 100–200 kHz with zero-voltage switching. Use Value: Low Qgd/Qg ratio (0.37) ensures precise timing control and reduced dead-time loss. |
Use Scenario: Active clamp forward converter in 1U server power supply (80 PLUS Titanium). IC Role / Device Role / Timing Role: Main switch handling 400 V DC bus with synchronous rectification on secondary side. Use Value: Fast trr and low VSD (1.6 V) reduce body diode conduction loss during transition intervals. |
| EV Onboard Charger | Industrial Motor Drive Inverter |
|
Use Scenario: Bidirectional AC/DC stage in 11 kW OBC using dual-active-bridge topology. IC Role / Device Role / Timing Role: High-frequency bridge leg switch supporting soft-switching across wide input range. Use Value: 100 V/ns dv/dt ruggedness prevents spurious turn-on during high-slew-rate transitions in bidirectional mode. |
Use Scenario: 3-phase inverter stage in 7.5 kW HVAC compressor drive with field-oriented control. IC Role / Device Role / Timing Role: IGBT replacement in 15–25 kHz PWM-driven motor output stage. Use Value: RthJC = 0.72 °C/W allows direct mounting on aluminum baseplate without additional isolators. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IXFH52N60P3 | TO-247 package, higher RDS(on) (95 mΩ), no driver source pin, higher Ciss (3000 pF) | Limited to lower-frequency (<100 kHz) hard-switched topologies due to slower switching and no Kelvin source | Prefer when mechanical mounting flexibility outweighs switching performance and board-level EMI control needs |
| IPP60R099C7 | TO-220FP package, 99 mΩ RDS(on), no fast-recovery diode, lower avalanche rating (EAS = 220 mJ) | Suitable only for non-resonant, low-di/dt applications; not rated for ZVS or high-dv/dt bridge use | Select only for cost-sensitive, low-complexity flyback or forward converters where diode recovery is not critical |
Compared with IXFH52N60P3 and IPP60R099C7, STL52N60DM6 delivers superior high-frequency efficiency via its driver-source pin, lower Qgd, and 2.5× higher EAS, making it uniquely suited for ZVS, phase-shift, and high-reliability industrial inverters.
Availability
STL52N60DM6 is available at Aetrix Electronics and suitable for industrial SMPS, server power supplies, EV onboard chargers, and motor drive inverters requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for STL52N60DM6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, MCU, power, and sensor solutions for automotive, industrial, and consumer markets.
This device belongs to the MDmesh DM6 high-voltage superjunction MOSFET product line, engineered specifically for high-efficiency, high-frequency switched-mode power conversion in demanding industrial and energy infrastructure applications.
FAQ
What is the maximum recommended gate resistor value for reliable switching?
A gate resistor of ≤4.7 Ω is recommended to achieve specified td(off) = 63 ns and prevent oscillation, given the device's low intrinsic gate resistance (1.6 Ω) and 52 nC total gate charge. Higher values increase switching loss and risk shoot-through in bridge configurations due to slowed turn-off.
Can STL52N60DM6 replace older MDmesh D5 devices in existing designs?
Yes-STL52N60DM6 offers lower RDS(on) (72 mΩ vs. 85 mΩ typical), faster trr (134 ns vs. 220 ns), and improved dv/dt ruggedness (100 V/ns vs. 75 V/ns), enabling direct drop-in upgrades in most 600 V SMPS designs without layout changes, provided the driver source pin is properly connected.
Is the driver source (pin 2) mandatory for operation?
No-it is not electrically mandatory for basic functionality, but omitting the driver source connection forfeits the primary benefit of the DM6 architecture: elimination of gate drive disturbance from high di/dt source current. For >100 kHz or high-power applications, pin 2 must be connected to the gate driver ground reference.
What PCB layout practices maximize thermal performance?
Use ≥200 mm² of 2 oz copper connected to the exposed drain pad (pin 5) with ≥6 thermal vias (0.3 mm diameter, 0.8 mm pitch); keep driver source (pin 2) trace short and separate from power source (pins 3,4); and maintain ≥0.5 mm clearance between gate and drain traces to sustain 600 V isolation.
STL52N60DM6 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- MDmesh™ DM6
- Package/Case:
- 8-PowerVDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 600 V
- Current - Continuous Drain (Id) @ 25°C:
- 45A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 84mOhm @ 22.5A, 10V
- Vgs(th) (Max) @ Id:
- 4.75V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 52 nC @ 10 V
- Vgs (Max):
- ±25V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2468 pF @ 100 V
- FET Feature:
- -
- Power Dissipation (Max):
- 174W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerFlat™ (8x8) HV
STL52N60DM6 FAQ
1.How can I place an order for STL52N60DM6 through Aetrix?
Please submit a Request for Quotation (RFQ) for STL52N60DM6 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STL52N60DM6 reliable?
The price and inventory of STL52N60DM6 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STL52N60DM6 is usually 5 days.
3.What payment methods are accepted for STL52N60DM6?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STL52N60DM6 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STL52N60DM6?
STL52N60DM6 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STL52N60DM6 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STL52N60DM6?
For technical support, including STL52N60DM6 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STL52N60DM6 requirements.
6.How does Aetrix verify that STL52N60DM6 is sourced from the original manufacturer or authorized distributors?
All STL52N60DM6 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STL52N60DM6 meets industry standards.
7.What is the process for return or replacement of STL52N60DM6?
All STL52N60DM6 units undergo pre-shipment inspection (PSI). If there is an issue with STL52N60DM6, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STL52N60DM6 part is unused and in its original packaging.
Return procedure for STL52N60DM6:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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