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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STL57N65M5

Name: STL57N65M5
Brand: STMicroelectronics
SKU: STL57N65M5
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STL57N65M5

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: 8-PowerVDFN

Datasheet:: STL57N65M5.pdf

Description:: MOSFET N-CH 650V 4.3A 8POWERFLAT

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STL57N65M5 from STMicroelectronics is an N-channel 650 V, 22.5 A Power MOSFET based on MDmesh™ M5 technology in a PowerFLAT™ 8x8 HV package, featuring 0.061 Ω typ. R_DS(on), 96 nC total gate charge, and 150 °C max junction temperature. It delivers high-efficiency switching for industrial SMPS, PFC stages, and solar inverters.

For engineers reviewing the STL57N65M5 datasheet, STL57N65M5 pinout, STL57N65M5 application, or STL57N65M5 equivalent, key selection criteria include avalanche ruggedness (960 mJ E_AS), low C_oss (100 pF), fast switching (84 ns t_d(V)), and thermal resistance (0.66 °C/W j-case).

Technical Context

This device uses ST's MDmesh™ M5 vertical superjunction process to achieve ultra-low R_DS(on) while maintaining high voltage blocking (650 V) and robust avalanche capability. Its internal structure integrates a fast-recovery body diode with 378 ns t_rr at 25 °C and 9.5 µC Q_rr at 150 °C.

The PowerFLAT™ 8x8 HV package enables double-sided cooling and supports high-current PCB mounting (4.3 A continuous on FR-4). Gate drive is optimized for 10 V logic-level operation with V_GS(th) of 3–5 V and low input capacitance (4200 pF C_iss).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - Supports 400 V DC bus designs with 1.6× safety margin for transient overvoltage
R_DS(on) typ.	0.061 Ω - Enables <1.4 W conduction loss at 22.5 A, critical for high-efficiency PFC
Q_g	96 nC - Determines gate driver power requirement; compatible with standard 1-A peak drivers
E_AS	960 mJ - Withstands unclamped inductive switching events without failure in hard-switched topologies
t_rr	378 ns (25 °C) - Limits diode reverse recovery loss during ZVS transitions in LLC resonant converters
R_thj-case	0.66 °C/W - Allows 189 W continuous dissipation with active heatsinking, enabling compact thermal design
C_oss	100 pF - Reduces capacitive turn-on loss and improves light-load efficiency in high-frequency SMPS

Pinout & Package

STL57N65M5 is housed in a surface-mount PowerFLAT™ 8x8 HV package with exposed drain pad for thermal and electrical connection. The 5-pin layout supports high-current source return paths and isolated gate drive.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control input	Receives 10 V logic-level signal; 1.4 Ω intrinsic gate resistance minimizes ringing
2 (Driver Source)	Source reference for gate driver	Provides local return path for gate loop, reducing noise coupling into control circuitry
3,4 (Power Source)	Main current return path	Dual-source terminals reduce source inductance and improve current sharing in parallel configurations
5 (Drain)	High-side power output	Exposed copper pad connects directly to PCB ground plane or heatsink for optimal thermal transfer

Key Features

Feature	Design Value
MDmesh™ M5 process	Enables 0.061 Ω R_DS(on) at 650 V, reducing conduction loss by >25% vs prior-generation superjunction MOSFETs
100% avalanche tested	Guarantees single-pulse ruggedness up to 960 mJ, eliminating need for external snubbers in flyback/PFC designs
Low C_oss and C_rss	100 pF C_oss and 6 pF C_rss enable clean hard-switching at 100 kHz+ with minimal voltage overshoot
PowerFLAT™ 8x8 HV thermal design	0.66 °C/W R_thj-case allows direct PCB copper heatsinking-no mechanical clip or thermal interface required

Applications

Industrial Switch-Mode Power Supplies

Photovoltaic String Inverters

Use Scenario: Primary-side switch in 1–3 kW offline AC/DC converters with active clamp or LLC topology.

IC Role / Device Role / Timing Role: High-voltage, high-current main switching element handling 400 V DC bus and 22.5 A peak current.

Use Value: Low R_DS(on) and 96 nC Q_g reduce both conduction and switching losses, achieving >95% full-load efficiency.

Use Scenario: DC-DC boost stage in string inverters converting 600–1000 V PV array output to intermediate bus.

IC Role / Device Role / Timing Role: Fast-switching, avalanche-rugged MOSFET operating at 50–100 kHz with high dv/dt immunity.

Use Value: 15 V/ns dv/dt rating and 378 ns t_rr suppress false triggering and minimize recovery loss during MPPT transients.

Server PSU Front-End PFC

Industrial Motor Drive Half-Bridge

Use Scenario: Continuous-conduction-mode (CCM) boost PFC stage in 2–5 kW telecom/server PSUs.

IC Role / Device Role / Timing Role: Critical conduction mode switch with high duty-cycle operation and tight thermal constraints.

Use Value: 0.66 °C/W R_thj-case and 189 W P_TOT allow sustained 22.5 A current without derating on 2 oz Cu PCB.

Use Scenario: Low-side switch in 3-phase IGBT/MOSFET half-bridge modules for HVAC and pump drives.

IC Role / Device Role / Timing Role: Synchronized freewheeling path with controlled body diode recovery during PWM dead-time.

Use Value: 9.5 µC Q_rr at 150 °C ensures predictable commutation timing and reduces shoot-through risk.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXTH50N65X2	R_DS(on) = 0.055 Ω, Q_g = 120 nC, TO-247 package	Higher peak current (50 A) but larger footprint and higher gate drive loss	Preferred where board space permits and higher surge current is needed
IPP65R099C7	R_DS(on) = 0.099 Ω, Q_g = 62 nC, TO-220FP package	Lower gate charge but 63% higher conduction loss; no avalanche rating specified	Suitable for cost-sensitive, lower-power (<1.5 kW) designs with simpler thermal management

Compared with IXTH50N65X2 and IPP65R099C7, STL57N65M5 offers the best balance of low R_DS(on), moderate Q_g, and verified avalanche ruggedness in a thermally efficient surface-mount package-ideal for space-constrained, high-reliability industrial power stages.

Availability

STL57N65M5 is available at Aetrix Electronics and suitable for industrial switch-mode power supplies, photovoltaic inverters, and server front-end PFC circuits requiring stable component supply and long-term manufacturing continuity.

Supply support for STL57N65M5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power, analog, MEMS, and microcontroller technologies for industrial, automotive, and consumer markets.

The MDmesh™ M5 product line targets high-efficiency, high-voltage power conversion systems-designed specifically for demanding applications like telecom rectifiers, solar inverters, and industrial motor drives where low R_DS(on) and avalanche robustness are critical.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STL57N65M5 supports 22 A continuous drain current at T_C = 100 °C, as defined by its safe operating area and package thermal limits. This rating assumes proper PCB copper area (≥1 inch², 2 oz Cu) and adequate airflow or heatsinking to maintain case temperature stability under load.

Does this MOSFET require a negative gate turn-off voltage?

No. The STL57N65M5 has a gate threshold voltage range of 3–5 V and is fully compatible with 0–10 V or 0–12 V gate drive schemes. A negative turn-off voltage is not required or recommended; standard logic-level drivers with 10 V gate drive achieve optimal R_DS(on) and switching performance.

Can STL57N65M5 be used in parallel configurations?

Yes-its positive temperature coefficient of R_DS(on) (confirmed in Figure 10 of the datasheet) enables stable current sharing. Use matched gate resistors (≤4.7 Ω), symmetrical PCB layout, and separate gate drive traces to minimize loop inductance and ensure balanced dynamic current distribution across paralleled devices.

What is the recommended PCB layout for thermal performance?

Maximize the copper area connected to the Drain (Pin 5) pad using ≥2 oz Cu and multiple thermal vias (≥12× 0.3 mm diameter) to inner ground planes. Keep Driver Source (Pin 2) and Power Source (Pins 3,4) traces short and wide; isolate gate routing from power loops to prevent noise coupling. Follow ST's AN4373 layout guidelines for PowerFLAT™ 8x8 HV packages.

STL57N65M5 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ V

Package/Case:: 8-PowerVDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 4.3A (Ta), 22.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 69mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 110 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 4200 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 2.8W (Ta), 189W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerFlat™ (8x8) HV

STL57N65M5 FAQ

1.How can I place an order for STL57N65M5 through Aetrix?

Please submit a Request for Quotation (RFQ) for STL57N65M5 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STL57N65M5 reliable?

The price and inventory of STL57N65M5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STL57N65M5 is usually 5 days.

3.What payment methods are accepted for STL57N65M5?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STL57N65M5 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STL57N65M5?

STL57N65M5 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STL57N65M5 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STL57N65M5?

For technical support, including STL57N65M5 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STL57N65M5 requirements.

6.How does Aetrix verify that STL57N65M5 is sourced from the original manufacturer or authorized distributors?

All STL57N65M5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STL57N65M5 meets industry standards.

7.What is the process for return or replacement of STL57N65M5?

All STL57N65M5 units undergo pre-shipment inspection (PSI). If there is an issue with STL57N65M5, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STL57N65M5 part is unused and in its original packaging.

Return procedure for STL57N65M5:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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