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STMicroelectronics STL58N3LLH5

Part No.:
STL58N3LLH5
Manufacturer:
STMicroelectronics
Category:
FETs, MOSFETs
Package:
8-PowerVDFN
Datasheet:
AetrixSTL58N3LLH5.pdf
Description:
MOSFET N-CH 30V 64A POWERFLAT
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,000

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Product details

Overview

STL58N3LLH5 from STMicroelectronics is an automotive-grade N-channel Power MOSFET using STripFET™ H5 technology in a PowerFLAT™ 5x6 wettable flank package. It delivers 30 V VDS, 0.0076 Ω typ. RDS(on) at VGS = 10 V, and 56 A continuous drain current at TC = 25 °C, optimized for high-efficiency switching in engine control units and battery management systems.

For engineers reviewing the STL58N3LLH5 datasheet, STL58N3LLH5 pinout, STL58N3LLH5 application, or STL58N3LLH5 equivalent, key selection criteria include its AEC-Q101 qualification, low gate charge (6.5 nC typ.), high avalanche energy rating (150 mJ), and thermal resistance of 2 °C/W junction-to-case - critical for under-hood power switching reliability.

Technical Context

This MOSFET employs ST's STripFET™ H5 process to minimize conduction and switching losses simultaneously. Its 0.009 Ω max RDS(on) at VGS = 10 V and low Ciss (950 pF typ.) enable fast, efficient switching in 12 V automotive systems with minimal gate drive power demand.

The PowerFLAT™ 5x6 WF package features exposed source pads on all four sides for enhanced thermal dissipation and solder-joint inspection via automated optical inspection (AOI). Its 2 °C/W Rthj-case supports high-current operation without heatsinks in space-constrained ECUs.

Key Specifications

Parameter Value and Actual Design Meaning
VDS 30 V - Maximum drain-source blocking voltage compatible with 12 V automotive battery systems including load dump transients.
RDS(on) typ. 0.0076 Ω at VGS = 10 V - Enables <1.5 W conduction loss at 56 A, reducing thermal stress in high-current switching nodes.
ID cont. 56 A at TC = 25 °C - Supports high-power solenoid, fuel pump, and fan motor drivers without parallel devices.
EAS 150 mJ - Robust unclamped inductive switching capability essential for relay and motor coil driving without snubbers.
Qg typ. 6.5 nC - Low gate charge reduces driver IC power consumption and enables faster turn-on/turn-off transitions.
Rthj-case 2 °C/W - Allows direct mounting to PCB copper planes or small heatsinks for thermal management in compact modules.
VGS(th) 1–2.5 V - Ensures reliable enhancement-mode turn-on with standard 3.3 V or 5 V logic-level microcontrollers.

Pinout & Package

STL58N3LLH5 uses the PowerFLAT™ 5x6 WF package - a surface-mount, wettable flank leadless package with exposed source terminals on all four edges for thermal and solder-joint inspection. Pin 1 is marked by a notch on the top-side silkscreen.

Pin/Terminal Circuit Role Design Meaning
Drain (D) Power output terminal connected internally to the MOSFET die backside Mounted directly to PCB copper pour for low-inductance, high-current path and thermal conduction to board.
Source (S) Return path for load current; tied to internal substrate Exposed on all four package edges - enables AOI verification and improves solder joint reliability in reflow.
Gate (G) Control input for channel conduction Single pad on top edge; requires <2.5 Ω gate series resistance to damp ringing during fast switching.

Key Features

Feature Design Value
AEC-Q101 qualified Validated for automotive under-hood use across –55 °C to +175 °C junction temperature range.
Wettable flank package Enables automated optical inspection of solder fillets - critical for zero-defect manufacturing in safety-critical ECUs.
High avalanche ruggedness 150 mJ single-pulse EAS allows safe operation during inductive load turn-off without external clamping diodes.
Low gate drive power loss 6.5 nC Qg and 2.5 Ω Rg reduce driver power dissipation and simplify gate driver selection.
Optimized FoM (RDS(on) × Qg) ~0.048 Ω·nC - Among best-in-class for 30 V automotive MOSFETs, balancing conduction and switching efficiency.

Applications

Engine Control Unit (ECU) Solenoid Driver 12 V Battery Disconnect Switch

Use Scenario: Driving high-current fuel injector or turbocharger wastegate solenoids in gasoline/diesel engines.

IC Role / Device Role / Timing Role: High-side or low-side power switch controlling 10–40 A inductive loads with PWM frequencies up to 20 kHz.

Use Value: Low RDS(on) minimizes I²R heating during extended duty cycles; high EAS withstands back-EMF without snubber circuits.

Use Scenario: Isolating starter battery from auxiliary loads (e.g., infotainment, ADAS sensors) during cranking or fault conditions.

IC Role / Device Role / Timing Role: Bidirectional load switch enabling controlled power-up/down sequencing and reverse polarity protection.

Use Value: 30 V rating covers ISO 7637-2 pulse 5a (load dump); wettable flanks ensure solder joint integrity over 10,000 thermal cycles.

Electric Power Steering (EPS) Motor Phase Switch Automotive HVAC Blower Motor Controller

Use Scenario: Half-bridge phase leg in 12 V EPS motor inverters requiring robust short-circuit tolerance.

IC Role / Device Role / Timing Role: Low-side switching element in three-phase inverter with desaturation detection and cycle-by-cycle current limiting.

Use Value: 224 A pulsed IDM supports peak torque demands; 2 °C/W Rthj-case enables direct PCB thermal coupling to copper ground plane.

Use Scenario: PWM-controlled blower motor driver in climate control systems with variable speed and soft-start requirements.

IC Role / Device Role / Timing Role: High-efficiency, low-noise power stage operating at 1–20 kHz PWM with integrated freewheeling diode conduction.

Use Value: 1.1 V VSD forward drop at 15 A reduces heat generation in freewheeling mode; low Coss suppresses EMI during switching transitions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 30 V automotive power MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
Infineon BSC014N03LS RDS(on) = 1.4 mΩ @ 10 V (lower), but Qg = 12.5 nC (higher); PowerPAK® SO-8 package lacks wettable flanks. Better conduction efficiency but higher gate drive loss; unsuitable for AOI-based automotive production lines. Select when lowest RDS(on) dominates and AOI is not required; verify thermal interface design for SO-8 footprint.
ON Semiconductor NTMFS5C428NT1G RDS(on) = 0.0042 Ω @ 10 V (lower), Qg = 10.5 nC; PowerTrench® 5x6 package has wettable flanks but no AEC-Q101 certification. Higher performance in lab environments; not approved for production automotive applications per OEM requirements. Acceptable for non-safety-critical prototypes or commercial vehicles; reject for Tier 1 ECU designs requiring AEC-Q101 compliance.

Compared with BSC014N03LS and NTMFS5C428NT1G, STL58N3LLH5 uniquely balances AEC-Q101 qualification, wettable flank manufacturability, and FoM (0.048 Ω·nC) - making it the only choice for volume production of certified automotive power switches where reliability, inspectability, and thermal performance are jointly constrained.

Availability

STL58N3LLH5 is available at Aetrix Electronics and suitable for engine control units, battery disconnect systems, electric power steering modules, and HVAC blower controllers requiring stable component supply across automotive production lifecycles.

Supply support for STL58N3LLH5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in automotive, industrial, and power management solutions with vertical manufacturing capabilities.

This device belongs to ST's STripFET™ H5 automotive MOSFET product line, engineered specifically for high-reliability, high-current switching in 12 V vehicle electrical architectures - emphasizing thermal robustness, avalanche safety, and automated assembly compatibility.

FAQ

Is STL58N3LLH5 suitable for high-frequency PWM applications above 100 kHz?

No - its 950 pF Ciss and 27 pF Crss values make it optimized for 1–50 kHz automotive switching (e.g., solenoids, motors), not MHz-range SMPS. At >100 kHz, switching losses rise significantly due to gate charge and capacitance limitations. For high-frequency DC-DC converters, consider ST's MDmesh™ series instead.

Can STL58N3LLH5 be used in a high-side configuration with 12 V gate drive?

Yes - its VGS rating of +22 V allows safe operation with 12 V gate drive, and its 1–2.5 V VGS(th) ensures full enhancement. However, a dedicated high-side driver (e.g., ST's L9369) is required to provide floating gate bias; direct microcontroller connection is unsafe due to level-shifting and shoot-through risks.

What is the maximum PCB copper area needed to maintain TJ < 150 °C at 45 A continuous current?

With Rthj-pcb = 31.3 °C/W and PD ≈ I² × RDS(on) = 45² × 0.009 = 18.2 W, ΔT = 18.2 × 31.3 ≈ 570 °C - far exceeding safe limits. Therefore, PCB-only cooling is insufficient. The device must be mounted to a heatsink or large internal copper plane with thermal vias; junction-to-case path (2 °C/W) is the intended thermal route.

Does the STL58N3LLH5 integrate a body diode, and what are its recovery characteristics?

Yes - it includes an intrinsic source-drain body diode with 1.1 V forward voltage at 15 A and 20–36 ns reverse recovery time (trr) at 150 °C. This enables freewheeling in half-bridge configurations, but its Qrr of 10–18 nC necessitates careful layout to minimize voltage overshoot during commutation in inductive loads.

STL58N3LLH5 Specifications

Product attributes
Attribute value
Manufacturer:
STMicroelectronics
Series:
STripFET™ H5
Package/Case:
8-PowerVDFN
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
30 V
Current - Continuous Drain (Id) @ 25°C:
64A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
9mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
10 nC @ 4.5 V
Vgs (Max):
+22V, -20V
Input Capacitance (Ciss) (Max) @ Vds:
950 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
4.8W (Ta), 62.5W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
PowerFlat™ (5x6)

STL58N3LLH5 FAQ

1.How can I place an order for STL58N3LLH5 through Aetrix?

Please submit a Request for Quotation (RFQ) for STL58N3LLH5 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STL58N3LLH5 reliable?

The price and inventory of STL58N3LLH5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STL58N3LLH5 is usually 5 days.

3.What payment methods are accepted for STL58N3LLH5?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STL58N3LLH5 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STL58N3LLH5?

STL58N3LLH5 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STL58N3LLH5 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STL58N3LLH5?

For technical support, including STL58N3LLH5 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STL58N3LLH5 requirements.

6.How does Aetrix verify that STL58N3LLH5 is sourced from the original manufacturer or authorized distributors?

All STL58N3LLH5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STL58N3LLH5 meets industry standards.

7.What is the process for return or replacement of STL58N3LLH5?

All STL58N3LLH5 units undergo pre-shipment inspection (PSI). If there is an issue with STL58N3LLH5, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STL58N3LLH5 part is unused and in its original packaging.

Return procedure for STL58N3LLH5:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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