Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

STMicroelectronics STL60N3LLH5

Part No.:
STL60N3LLH5
Manufacturer:
STMicroelectronics
Category:
FETs, MOSFETs
Package:
8-PowerVDFN
Datasheet:
AetrixSTL60N3LLH5.pdf
Description:
MOSFET N-CH 30V 60A POWERFLAT
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,883

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

STL60N3LLH5 from STMicroelectronics is an N-channel 30 V PowerFLAT™ (5×6) STripFET™ V MOSFET optimized for high-efficiency switching in DC-DC converters and motor control. It delivers RDS(on) = 6.3 mΩ @ VGS = 10 V, 8.5 A; Qg = 8 nC; avalanche energy EAS = 120 mJ; and continuous drain current ID = 17 A (TC = 25 °C, PCB-mounted). It is used in synchronous buck converters for server VRMs.

For engineers reviewing the STL60N3LLH5 datasheet, STL60N3LLH5 pinout, STL60N3LLH5 application, or STL60N3LLH5 equivalent, key selection criteria include low RDS(on) × Qg figure of merit, high pulsed current capability (IDM = 68 A), thermal resistance to PCB (Rthj-pcb = 31.3 °C/W), and unclamped inductive switching ruggedness.

Technical Context

This MOSFET employs ST's STripFET™ V process to minimize conduction and switching losses simultaneously. Its gate charge profile supports fast turn-on/turn-off with low drive power, while the integrated source-drain diode exhibits trr = 22 ns and Qrr = 15 nC at Tj = 150 °C, enabling efficient synchronous rectification.

The device is characterized for operation up to 150 °C junction temperature and features a robust safe operating area (SOA) validated for unclamped inductive switching. Its PowerFLAT™ (5×6) package provides exposed drain pad for low thermal resistance to PCB (Rthj-pcb = 31.3 °C/W on 1 in² 2 oz Cu).

Key Specifications

ParameterValue and Actual Design Meaning
VDS30 V - Maximum blocking voltage for 24 V input systems with margin
RDS(on) max7.1 mΩ @ VGS = 10 V, ID = 8.5 A - Enables <1 W conduction loss at 17 A
Qg8 nC - Reduces gate drive power and enables >1 MHz switching in hard-switched topologies
ID (PCB)17 A continuous @ TC = 25 °C - Rated for FR-4 board with 1 in² copper area
EAS120 mJ - Supports reliable operation under unclamped inductive load transients
trr22 ns - Minimizes reverse recovery loss in synchronous rectifier configurations
Rthj-pcb31.3 °C/W - Enables thermal management without heatsink in space-constrained layouts

Pinout & Package

STL60N3LLH5 uses the PowerFLAT™ (5×6) surface-mount package with exposed drain pad (pin 1–3: Source; pin 4–5: Gate; bottom thermal pad: Drain). The package measures 5.0 × 6.0 × 0.83 mm and is RoHS-compliant and ECOPACK® certified.

Pin/TerminalCircuit RoleDesign Meaning
1–3 (Source)Source connection (common return path)Low-inductance parallel terminals reduce source inductance in high-di/dt switching
4–5 (Gate)Control terminalDual gate pins lower gate loop inductance and improve switching consistency
Drain (exposed pad)Main current path and thermal interfaceDirect thermal coupling to PCB improves power dissipation and thermal stability

Key Features

FeatureDesign Value
RDS(on) × Qg benchmark53.1 mΩ·nC - Industry-leading FOM for 30 V MOSFETs, reducing total switching + conduction loss
High avalanche ruggednessEAS = 120 mJ - Eliminates need for external snubbers in inductive load circuits
Low gate drive power requirementQg = 8 nC @ VGS = 10 V - Compatible with low-current gate drivers (e.g., STMicro's STGAP2S)
Optimized body diodetrr = 22 ns, Qrr = 15 nC - Reduces shoot-through risk and recovery loss in synchronous buck stages
Thermally enhanced packageRthj-pcb = 31.3 °C/W - Allows full 17 A rating on standard FR-4 without thermal vias or heatsinks

Applications

Server VRM Synchronous BuckIndustrial BLDC Motor Inverter

Use Scenario: High-density 12 V → 1.2 V point-of-load conversion in AI accelerator servers.

IC Role / Device Role / Timing Role: High-side switch in multiphase synchronous buck regulator with >500 kHz switching frequency.

Use Value: 6.3 mΩ RDS(on) and 8 nC Qg enable >95% efficiency at 100 A per phase while minimizing gate driver stress.

Use Scenario: Low-voltage (<30 V) brushless DC motor drive in factory automation actuators.

IC Role / Device Role / Timing Role: Low-side switching element in 3-phase inverter leg with PWM carrier up to 20 kHz.

Use Value: 68 A pulsed current rating and 120 mJ avalanche energy tolerate motor stall and regenerative braking transients.

USB-C PD Fast ChargingTelecom DC-DC Intermediate Bus

Use Scenario: Secondary-side synchronous rectifier in 20–100 W USB-C PD adapters.

IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diode in forward or LLC topology secondary stage.

Use Value: 22 ns reverse recovery time and low Qrr cut diode conduction loss by >40% vs. discrete 30 V Schottky.

Use Scenario: 48 V → 12 V intermediate bus converter in 5G base station power shelves.

IC Role / Device Role / Timing Role: Primary-side switch in hard-switched flyback or active-clamp forward converter.

Use Value: 30 V VDS rating with 150 °C Tj max supports high-reliability operation in thermally constrained telecom enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 30 V PowerFLAT™ MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
Infineon BSC014N03LSRDS(on) = 1.4 mΩ (lower), Qg = 12.5 nC (higher), same PowerFLAT™ (5×6) footprintBetter conduction loss but higher gate drive demand; requires stronger driverSelect when lowest RDS(on) dominates over switching loss and gate drive capability exists
ON Semiconductor NTMFS4C03NT1GRDS(on) = 6.7 mΩ, Qg = 7.2 nC, same package, slightly lower EAS (100 mJ)Nearly identical performance envelope; reduced avalanche marginSelect when cost sensitivity outweighs need for maximum unclamped inductive ruggedness

Compared with BSC014N03LS and NTMFS4C03NT1G, STL60N3LLH5 offers the best balance of ultra-low Qg, proven 120 mJ avalanche capability, and stable RDS(on) across temperature-making it preferred for thermally constrained, transient-heavy industrial and telecom power stages.

Availability

STL60N3LLH5 is available at Aetrix Electronics and suitable for server VRMs, industrial BLDC inverters, USB-C PD adapters, and telecom intermediate bus converters requiring stable component supply and long-term production continuity.

Supply support for STL60N3LLH5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

The STL60N3LLH5 belongs to ST's STripFET™ V Power MOSFET product line, engineered specifically for high-frequency, high-efficiency switching in compact power supplies and motor drives where thermal and electrical performance must co-optimize.

FAQ

What is the maximum continuous drain current for STL60N3LLH5 under PCB-mount conditions?

The maximum continuous drain current is 17 A when mounted on a standard FR-4 PCB with 1 in² of 2 oz copper (per datasheet Table 1, ID(2)). This rating assumes TC = 25 °C and accounts for Rthj-pcb = 31.3 °C/W. At TC = 100 °C, derated current drops to 10.6 A.

Does STL60N3LLH5 support gate drive at 4.5 V logic levels?

Yes. RDS(on) is specified at 8.6 mΩ max @ VGS = 4.5 V and ID = 8.5 A (Table 5), confirming full enhancement at 4.5 V. However, Qg remains 8 nC, so gate driver peak current must still support ~1–2 A for sub-10 ns rise times.

Is the PowerFLAT™ (5×6) package lead-free and RoHS-compliant?

Yes. The STL60N3LLH5 is manufactured in ST's ECOPACK®-compliant PowerFLAT™ (5×6) package, meeting RoHS Directive 2011/65/EU and REACH SVHC requirements. Lead finish is matte tin, and the package is halogen-free per ST's environmental specifications.

Can STL60N3LLH5 be used in parallel configurations?

Yes, but with design precautions. Its positive temperature coefficient for RDS(on) (Figure 11) supports current sharing. Use matched gate resistors, symmetrical layout, and individual gate routing to minimize loop inductance imbalance. Derate total current by ≥15% versus sum of individual ratings due to thermal coupling on shared PCB area.

STL60N3LLH5 Specifications

Product attributes
Attribute value
Manufacturer:
STMicroelectronics
Series:
STripFET™ V
Package/Case:
8-PowerVDFN
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
30 V
Current - Continuous Drain (Id) @ 25°C:
60A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
7.1mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id:
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
8 nC @ 4.5 V
Vgs (Max):
±22V
Input Capacitance (Ciss) (Max) @ Vds:
1290 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
60W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PowerFlat™ (5x6)

STL60N3LLH5 FAQ

1.How can I place an order for STL60N3LLH5 through Aetrix?

Please submit a Request for Quotation (RFQ) for STL60N3LLH5 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STL60N3LLH5 reliable?

The price and inventory of STL60N3LLH5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STL60N3LLH5 is usually 5 days.

3.What payment methods are accepted for STL60N3LLH5?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STL60N3LLH5 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STL60N3LLH5?

STL60N3LLH5 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STL60N3LLH5 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STL60N3LLH5?

For technical support, including STL60N3LLH5 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STL60N3LLH5 requirements.

6.How does Aetrix verify that STL60N3LLH5 is sourced from the original manufacturer or authorized distributors?

All STL60N3LLH5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STL60N3LLH5 meets industry standards.

7.What is the process for return or replacement of STL60N3LLH5?

All STL60N3LLH5 units undergo pre-shipment inspection (PSI). If there is an issue with STL60N3LLH5, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STL60N3LLH5 part is unused and in its original packaging.

Return procedure for STL60N3LLH5:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

STL60N3LLH5 Tags

  • STL60N3LLH5
  • STL60N3LLH5 PDF
  • STL60N3LLH5 Datasheet
  • STL60N3LLH5 Specifications
  • STL60N3LLH5 Images
  • STMicroelectronics
  • STMicroelectronics STL60N3LLH5
  • Buy STL60N3LLH5
  • STL60N3LLH5 Price
  • STL60N3LLH5 Distributor
  • STL60N3LLH5 Supplier
  • STL60N3LLH5 Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER