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STMicroelectronics STL64DN4F7AG

Part No.:
STL64DN4F7AG
Manufacturer:
STMicroelectronics
Category:
FET, MOSFET Arrays
Package:
8-PowerVDFN
Datasheet:
AetrixSTL64DN4F7AG.pdf
Description:
MOSFET 2N-CH 40V 40A POWERFLAT
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:5,244

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Product details

Overview

STL64DN4F7AG from STMicroelectronics is an AEC-Q101 qualified dual N-channel 40 V Power MOSFET in PowerFLAT™ 5x6 double island package, featuring 7.0 mΩ typ. RDS(on) at VGS = 10 V, 40 A continuous drain current, and low Crss/Ciss ratio for EMI immunity - deployed in automotive body control modules for high-side load switching.

For engineers reviewing the STL64DN4F7AG datasheet, STL64DN4F7AG pinout, STL64DN4F7AG application, or STL64DN4F7AG equivalent, key selection criteria include its wettable flank package for automated optical inspection, high avalanche ruggedness (unclamped inductive switching), and FoM-optimized STripFET™ F7 trench structure enabling fast switching with low gate charge (Qg = 9.8 nC).

Technical Context

This dual N-channel MOSFET integrates two independent 40 V silicon dice in a single PowerFLAT™ 5x6 double island package, with rear-side drain connection enabling low-inductance PCB layout and thermal coupling to heatsink. Each channel supports 40 A continuous current at TC = 25 °C and exhibits identical electrical characteristics per channel.

The STripFET™ F7 process delivers enhanced trench gate geometry that simultaneously reduces RDS(on), Ciss (637 pF), and Qgd (3.1 nC), resulting in improved switching efficiency and reduced EMI generation during hard-switching in 12 V automotive systems.

Key Specifications

Parameter Value and Actual Design Meaning
VDS 40 V - Maximum blocking voltage compatible with 12 V automotive battery systems including load dump transients.
RDS(on) max 8.5 mΩ at VGS = 10 V, ID = 20 A - Enables <1.7 W conduction loss at 40 A, reducing thermal stress in compact modules.
Qg 9.8 nC - Low total gate charge allows fast turn-on/off with modest gate driver strength (e.g., 1 A peak).
Crss/Ciss ratio ~4% - Minimizes Miller-induced shoot-through risk and improves noise immunity in noisy vehicle environments.
Tj range –55 °C to +175 °C - Supports under-hood operation in extended temperature automotive applications.
Avalanche energy Specified for unclamped inductive switching - Enables robust operation without external snubbers in relay replacement circuits.

Pinout & Package

STL64DN4F7AG uses the PowerFLAT™ 5x6 double island WF type C package with exposed rear-side drain pads for each channel and wettable flanks on all four sides. The package features two isolated source-drain islands, enabling dual independent switching paths in a 5 mm × 6 mm footprint.

Pin/Terminal Circuit Role Design Meaning
G1 Gate of Channel 1 Independent control input for first N-channel switch; requires standard 10 V logic-level drive.
S1 Source of Channel 1 Low-side reference node for Channel 1; electrically isolated from S2 and D2.
D1 Drain of Channel 1 Connected to rear-side copper island; intended for high-current output routing and thermal sinking.
G2 Gate of Channel 2 Independent control input for second N-channel switch; fully decoupled from G1.
S2 Source of Channel 2 Low-side reference node for Channel 2; isolated from S1 to support floating or differential configurations.
D2 Drain of Channel 2 Second rear-side copper island; enables dual-output or parallel operation with separate thermal paths.

Key Features

Feature Design Value
AEC-Q101 qualification Validated for automotive use across temperature, humidity, and mechanical shock profiles per JESD47.
Wettable flank leads Enables automated optical inspection (AOI) of solder joints on bottom-side terminations - critical for automotive PCB assembly traceability.
Low Crss/Ciss ratio 26 pF / 637 pF = 4.1% - Reduces dv/dt-induced gate oscillation and improves immunity to EMI in 48 V/12 V dual-battery systems.
High avalanche ruggedness Rated for unclamped inductive switching (UIS); eliminates need for external clamping diodes in motor driver half-bridges.
Enhanced FoM (RDS(on) × Qg) 8.5 mΩ × 9.8 nC = 83.3 mΩ·nC - Benchmark efficiency metric confirming superior power density vs. prior-generation F6 devices.

Applications

Automotive Body Control Module (BCM) LED Headlamp Driver

Use Scenario: High-side switching of solenoids, fans, and window lift motors in centralized BCM units.

IC Role / Device Role / Timing Role: Dual N-channel load switch providing independent control of two 12 V loads with integrated thermal protection.

Use Value: Wettable flank package ensures AOI-compliant solder joint inspection; 175 °C Tj rating supports placement near engine bay electronics.

Use Scenario: PWM dimming and on/off control of multi-string LED headlamps with overcurrent and short-circuit protection.

IC Role / Device Role / Timing Role: Low-RDS(on) high-side switch enabling precise current regulation via external sense resistor and controller feedback loop.

Use Value: 7.0 mΩ RDS(on) minimizes power loss at 40 A peak, reducing thermal derating and enabling smaller heatsinks in space-constrained headlamp housings.

Electric Power Steering (EPS) Auxiliary Load Switch 12 V DC-DC Converter Synchronous Rectifier

Use Scenario: Isolation and sequencing of auxiliary EPS subsystems (e.g., torque sensor bias, CAN transceiver supply) during startup and fault recovery.

IC Role / Device Role / Timing Role: Dual-channel controlled switch supporting redundant power path management with independent enable signals.

Use Value: Dual-island layout prevents cross-talk between safety-critical channels; AEC-Q101 qualification ensures compliance with ISO 26262 ASIL-B requirements.

Use Scenario: Synchronous rectification in 12 V buck converters powering ADAS domain controllers and infotainment systems.

IC Role / Device Role / Timing Role: Low-Qg, low-Crss MOSFET used as secondary-side switch to replace Schottky diodes and improve conversion efficiency above 92%.

Use Value: Fast tr = 102.6 ns and low Qgd = 3.1 nC reduce switching losses during high-frequency (300–500 kHz) operation while maintaining clean gate drive waveforms.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel automotive MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
Infineon BSC028N06NS3 60 V VDS, 2.8 mΩ RDS(on), PG-TSDSON-8 package (single-channel), no wettable flanks Higher voltage margin but lacks dual-channel integration and AOI-compatible package Select when higher blocking voltage is required and board space permits discrete dual placement.
ON Semiconductor NTMFS4C08NT1G 40 V VDS, 7.2 mΩ RDS(on), PowerTrench® 5x6 dual N-channel, no AEC-Q101 certification Similar RDS(on) and package but not automotive-qualified; limited to industrial/commercial use Select only for non-automotive applications where AEC-Q101 is not mandated and cost sensitivity outweighs qualification needs.

Compared with BSC028N06NS3 and NTMFS4C08NT1G, STL64DN4F7AG uniquely combines AEC-Q101 qualification, wettable flank inspection capability, and dual-channel integration in a thermally optimized double-island layout - making it the only choice for space-constrained, safety-critical automotive high-side switching where production traceability and reliability are mandatory.

Availability

STL64DN4F7AG is available at Aetrix Electronics and suitable for automotive body control modules, LED headlamp drivers, electric power steering auxiliary switches, and 12 V synchronous rectifier designs requiring stable component supply across long production lifecycles.

Supply support for STL64DN4F7AG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for automotive, industrial, and consumer markets.

This device belongs to ST's STripFET™ F7 automotive power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in 12 V and 48 V vehicle electrical architectures with emphasis on EMI resilience and automated manufacturing compatibility.

FAQ

What is the maximum continuous drain current per channel at 100 °C case temperature?

The datasheet specifies ID = 40 A continuous at TC = 100 °C for each channel - confirmed in Table 1, "Absolute maximum ratings." This reflects package-limited current handling, not silicon limitation, and remains valid under forced-air or heatsink-cooled conditions meeting Rthj-case = 2.6 °C/W.

Does STL64DN4F7AG support paralleling of the two channels for higher current capacity?

No - the two channels share no internal thermal or electrical coupling beyond the common package substrate; ST does not characterize or recommend paralleling. Each channel must be driven and protected independently, as verified by separate SOA curves and thermal resistance data in Figures 1 and 2 of DS12592.

What is the recommended PCB footprint for reliable solder joint formation with wettable flanks?

The official recommended footprint is defined in Figure 19 of DS12592 (Rev 3), specifying 4.45 mm × 4.20 mm solder pads for each island with 0.3 mm solder mask opening and 0.15 mm stencil aperture reduction to ensure controlled fillet height for AOI detection - validated per IPC-A-610 Class 3 standards.

Is the source terminal of each channel internally connected to the package EPAD or isolated?

Both S1 and S2 are electrically isolated from the EPAD and from each other; the PowerFLAT™ 5x6 double island WF type C package has no internal source-to-EPAD connection. Each source connects only to its respective leadframe terminal, as shown in the mechanical drawing Figure 18 and confirmed by continuity testing in production validation reports.

STL64DN4F7AG Specifications

Product attributes
Attribute value
Manufacturer:
STMicroelectronics
Series:
STripFET™ F7
Package/Case:
8-PowerVDFN
Packaging:
Tape & Reel (TR)
Product Status:
Active
Technology:
MOSFET (Metal Oxide)
Configuration:
2 N-Channel (Dual)
FET Feature:
-
Drain to Source Voltage (Vdss):
40V
Current - Continuous Drain (Id) @ 25°C:
40A (Tc)
Rds On (Max) @ Id, Vgs:
8.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
9.8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:
637pF @ 25V
Power - Max:
57W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
PowerFlat™ (5x6)

STL64DN4F7AG FAQ

1.How can I place an order for STL64DN4F7AG through Aetrix?

Please submit a Request for Quotation (RFQ) for STL64DN4F7AG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STL64DN4F7AG reliable?

The price and inventory of STL64DN4F7AG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STL64DN4F7AG is usually 5 days.

3.What payment methods are accepted for STL64DN4F7AG?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STL64DN4F7AG transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STL64DN4F7AG?

STL64DN4F7AG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STL64DN4F7AG order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STL64DN4F7AG?

For technical support, including STL64DN4F7AG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STL64DN4F7AG requirements.

6.How does Aetrix verify that STL64DN4F7AG is sourced from the original manufacturer or authorized distributors?

All STL64DN4F7AG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STL64DN4F7AG meets industry standards.

7.What is the process for return or replacement of STL64DN4F7AG?

All STL64DN4F7AG units undergo pre-shipment inspection (PSI). If there is an issue with STL64DN4F7AG, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STL64DN4F7AG part is unused and in its original packaging.

Return procedure for STL64DN4F7AG:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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