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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STL75N3LLZH5

Name: STL75N3LLZH5
Brand: STMicroelectronics
SKU: STL75N3LLZH5
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STL75N3LLZH5

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: 8-PowerVDFN

Datasheet:: STL75N3LLZH5.pdf

Description:: MOSFET N-CH 30V 75A POWERFLAT

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Product details

Overview

STL75N3LLZH5 from STMicroelectronics is an N-channel PowerFLAT™ (5x6) STripFET™ V MOSFET optimized for high-efficiency switching in DC-DC converters and motor control, featuring 30 V V_DS, 0.0055 Ω R_DS(on) @ 10 V, 19 A continuous current (PCB-limited), and built-in gate-source Zener protection. It delivers industry-leading R_DS(on) × Q_g figure of merit for low conduction and switching losses.

For engineers reviewing the STL75N3LLZH5 datasheet, STL75N3LLZH5 pinout, STL75N3LLZH5 application, or STL75N3LLZH5 equivalent, key selection criteria include its 30 V rating, ultra-low on-resistance at 4.5 V gate drive, avalanche ruggedness, thermal resistance to PCB (31.3 °C/W), and PowerFLAT™ (5x6) surface-mount package compatibility with high-density power layouts.

Technical Context

This MOSFET employs ST's STripFET™ V trench-gate process to achieve sub-6 mΩ R_DS(on) at 10 V while maintaining low gate charge (Q_g = 11.8 nC) and fast switching (t_r = 9.2 ns, t_f = 20 ns). Its internal source-drain diode supports synchronous rectification with 24 ns reverse recovery time and 17 nC Q_rr at 150 °C.

The device integrates gate-source Zener diodes for ±18 V V_GS robustness and is rated for unclamped inductive switching with high avalanche energy capability. Thermal design relies on direct drain-to-PCB heat transfer via the exposed copper pad in the PowerFLAT™ (5x6) package.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage for 12–24 V system-level switching applications
R_DS(on) @ 10 V	0.0055 Ω - Enables <1 W conduction loss at 19 A, critical for thermally constrained PCB layouts
I_D (PCB-limited)	19 A continuous - Rated per FR-4 board (1 in², 2 oz Cu), defining real-world current capacity
Q_g	11.8 nC - Low gate drive power requirement, compatible with standard 5–10 V logic-level drivers
R_thj-pcb	31.3 °C/W - Junction-to-ambient thermal resistance on standard PCB, enabling accurate thermal margining
V_SD	1.1 V @ I_SD = 19 A - Forward voltage of integrated body diode, relevant for freewheeling path loss
t_rr	24 ns - Fast reverse recovery minimizes switching loss and EMI in hard-switched topologies

Pinout & Package

STL75N3LLZH5 uses the PowerFLAT™ (5x6) package: a 5 mm × 6 mm, 5-pin surface-mount outline with an exposed drain pad (Pin 1–3: Source; Pin 4: Gate; Pin 5: Drain/Exposed Pad). The drain pad must be soldered directly to a large PCB copper area for thermal and electrical performance.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3	Source	Common return path for load current; electrically tied internally; requires low-inductance PCB routing
4	Gate	Control terminal; driven by external gate driver; protected by integrated Zener diode to ±18 V
5 (Exposed Pad)	Drain	Main power output terminal; thermally and electrically connected to PCB copper pour for heat dissipation

Key Features

Feature	Design Value
R_DS(on) × Q_g benchmark	Industry-leading FOM enables simultaneous optimization of conduction and switching losses in high-frequency SMPS
Built-in G-S Zener diodes	Eliminates need for external gate protection components, reducing BOM count and layout complexity
High avalanche ruggedness	Rated for unclamped inductive switching-supports reliable operation in motor drive and relay driving without snubbers
Low R_thj-pcb	31.3 °C/W allows 4 W power dissipation on standard FR-4, simplifying thermal design vs. TO-220 alternatives
Optimized for 4.5 V drive	R_DS(on) = 0.0066 Ω @ 4.5 V enables direct interface with 5 V microcontrollers and logic-level drivers

Applications

DC-DC Converters

Motor Control (BLDC)

Use Scenario: High-current buck converter in telecom power supply delivering 12 V @ 15 A.

IC Role / Device Role: Synchronous high-side switch with integrated body diode used as low-side freewheeling path.

Use Value: 0.0055 Ω R_DS(on) reduces conduction loss to <1.25 W, while 24 ns t_rr limits shoot-through risk during dead-time transitions.

Use Scenario: 3-phase inverter stage for 24 V BLDC fan with sensorless commutation.

IC Role / Device Role: Low-side power switch handling pulsed 76 A peak currents during PWM modulation.

Use Value: 76 A pulsed rating and high avalanche energy withstand enable robust operation under inductive kickback without external clamping.

Load Switching

Hot-Swap Circuits

Use Scenario: 24 V industrial I/O module requiring controlled power-up of downstream peripherals.

IC Role / Device Role: Single-N-channel load switch with gate driven by microcontroller GPIO.

Use Value: Built-in G-S Zener allows direct 5 V MCU drive; 0.0066 Ω R_DS(on) @ 4.5 V ensures <10 mV drop at 1.5 A load current.

Use Scenario: Hot-swap controller reference design for redundant 12 V backplane supplies.

IC Role / Device Role: Main pass element in OR-ing configuration with current limiting and fault reporting.

Use Value: 30 V rating accommodates input transients up to ±10 %; low Q_g enables fast turn-on for inrush control using simple RC gate timing.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRL3803PbF	R_DS(on) = 0.006 Ω @ 10 V; Q_g = 42 nC; TO-220 package	Higher gate charge increases driver requirements; through-hole mounting limits board density	Preferred where legacy TO-220 footprint or higher single-pulse current (160 A) is required
SIR872DP-T1-GE3	R_DS(on) = 0.0052 Ω @ 10 V; Q_g = 22 nC; PowerPAK® SO-8 package	SO-8 footprint offers smaller area than PowerFLAT™ (5x6) but lower thermal mass and no exposed drain pad	Selected when space-constrained layout favors SO-8 and thermal budget permits higher R_thj-amb

Compared with IRL3803PbF and SIR872DP-T1-GE3, STL75N3LLZH5 provides the lowest R_DS(on) × Q_g product in a thermally superior PowerFLAT™ (5x6) package-ideal for compact, high-efficiency 24 V systems where PCB copper area can be allocated for drain-pad thermal sinking.

Availability

STL75N3LLZH5 is available at Aetrix Electronics and suitable for DC-DC converters, BLDC motor drives, industrial load switching, and hot-swap circuits requiring stable component supply, automotive-grade reliability, and high-current surface-mount power handling.

Supply support for STL75N3LLZH5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, designing and manufacturing analog, digital, and mixed-signal ICs for automotive, industrial, and consumer markets.

This device belongs to ST's STripFET™ V Power MOSFET product line, engineered specifically for high-efficiency, high-density power conversion in 12–30 V systems where low R_DS(on), fast switching, and robust avalanche performance are critical.

FAQ

What is the maximum continuous drain current for STL75N3LLZH5 under typical PCB conditions?

The datasheet specifies 19 A continuous drain current (I_D) when mounted on a 1 in² FR-4 board with 2 oz copper, measured at T_C = 25 °C. This value reflects real-world PCB-limited thermal performance-not case-temperature-limited ratings-and drops to 11.8 A at 100 °C ambient due to thermal derating.

Does STL75N3LLZH5 require external gate protection?

No. The device integrates bidirectional gate-source Zener diodes rated for ±18 V, eliminating the need for external TVS or clamping diodes. This simplifies gate-drive circuitry and improves reliability in noisy industrial environments where gate overvoltage transients may occur.

Can STL75N3LLZH5 be driven directly by a 3.3 V microcontroller?

Not reliably for full performance: R_DS(on) rises to 0.0078 Ω at 4.5 V and is not characterized below that. While it may conduct at 3.3 V, threshold voltage (V_GS(th)) is 1 V min, so partial turn-on could cause excessive heating. A level-shifting driver or 5 V gate supply is recommended for consistent low-loss operation.

How does the PowerFLAT™ (5x6) package compare thermally to TO-220 for this MOSFET?

PowerFLAT™ (5x6) achieves R_thj-pcb = 31.3 °C/W on FR-4, whereas typical TO-220 packages exhibit R_thj-amb > 60 °C/W without heatsink. Though TO-220 offers lower R_thj-case, the PowerFLAT™'s direct PCB thermal path enables better system-level thermal management in compact, double-sided layouts without mechanical heatsinks.

STL75N3LLZH5 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: STripFET™ V

Package/Case:: 8-PowerVDFN

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 75A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 6.1mOhm @ 9.5A, 10V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 11.8 nC @ 4.5 V

Vgs (Max):: ±18V

Input Capacitance (Ciss) (Max) @ Vds:: 1510 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 60W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerFlat™ (5x6)

STL75N3LLZH5 FAQ

1.How can I place an order for STL75N3LLZH5 through Aetrix?

Please submit a Request for Quotation (RFQ) for STL75N3LLZH5 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STL75N3LLZH5 reliable?

The price and inventory of STL75N3LLZH5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STL75N3LLZH5 is usually 5 days.

3.What payment methods are accepted for STL75N3LLZH5?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STL75N3LLZH5 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STL75N3LLZH5?

STL75N3LLZH5 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STL75N3LLZH5 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STL75N3LLZH5?

For technical support, including STL75N3LLZH5 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STL75N3LLZH5 requirements.

6.How does Aetrix verify that STL75N3LLZH5 is sourced from the original manufacturer or authorized distributors?

All STL75N3LLZH5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STL75N3LLZH5 meets industry standards.

7.What is the process for return or replacement of STL75N3LLZH5?

All STL75N3LLZH5 units undergo pre-shipment inspection (PSI). If there is an issue with STL75N3LLZH5, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STL75N3LLZH5 part is unused and in its original packaging.

Return procedure for STL75N3LLZH5:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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