Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STL7LN65K5AG

Name: STL7LN65K5AG
Brand: STMicroelectronics
SKU: STL7LN65K5AG
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: STL7LN65K5AG

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: 8-PowerVDFN

Datasheet:: STL7LN65K5AG.pdf

Description:: MOSFET N-CH 650V 5A PWRFLAT VHV

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:2,979

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

STL7LN65K5AG from STMicroelectronics is an AEC-Q101 qualified N-channel 650 V Power MOSFET in PowerFLAT 5x6 VHV package, featuring 0.95 Ω typ. R_DS(on), 5 A continuous drain current at T_C = 25 °C, and 11.7 nC total gate charge. It employs MDmesh K5 vertical structure for high-voltage switching in automotive on-board chargers and industrial AC-DC PFC stages.

For engineers reviewing the STL7LN65K5AG datasheet, STL7LN65K5AG pinout, STL7LN65K5AG application, or STL7LN65K5AG equivalent, key selection criteria include avalanche ruggedness (200 mJ), Zener-protected gate (±30 V), dv/dt immunity (50 V/ns), and thermal resistance (1.58 °C/W junction-to-case).

Technical Context

This MOSFET uses ST's MDmesh K5 proprietary vertical superjunction architecture to achieve ultra-low R_DS(on) × area and industry-leading figure of merit. Its optimized cell layout reduces output capacitance (C_oss = 22 pF) and reverse transfer capacitance (C_rss = 0.5 pF), enabling fast switching with low EMI in hard-switched topologies.

The integrated back-to-back gate-source Zener diodes provide ±30 V clamping without external components, while 100% unclamped inductive avalanche testing ensures robustness under overvoltage transients. The device operates up to 150 °C junction temperature and supports repetitive avalanche current of 1.5 A.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - Withstands DC bus voltages up to 400 VAC rectified + margin in PFC and SMPS primary switches.
R_DS(on) max	1.15 Ω - Ensures ≤5.8 W conduction loss at 5 A, enabling thermally constrained layouts in compact power modules.
Q_g	11.7 nC - Reduces gate drive power and enables use of low-current drivers (e.g., 1-A peak) in high-frequency (>100 kHz) converters.
E_AS	200 mJ - Supports single-pulse energy handling during line surges or transformer reset faults without failure.
dv/dt ruggedness	50 V/ns - Prevents spurious turn-on in high-noise environments such as motor drives and industrial inverters.
R_thJC	1.58 °C/W - Enables 79 W power dissipation with minimal heatsink when mounted on copper-clad PCBs per JEDEC standards.
V_SD	1.6 V - Low body diode forward voltage reduces reverse-recovery losses in synchronous rectification and bidirectional topologies.

Pinout & Package

STL7LN65K5AG uses the PowerFLAT 5x6 VHV package: surface-mount, exposed-drain thermal pad (pins 5–8), 8-pin configuration with Gull-wing leads, 1.27 mm pitch, and 0.55 mm typical height. Optimized for automated reflow and high-power density board layouts.

Pin/Terminal	Circuit Role	Design Meaning
D (5, 6, 7, 8)	Drain	High-side switch node connection; electrically and thermally tied to exposed copper pad for low-inductance, low-R_th path to PCB ground plane.
G (4)	Gate	Control input requiring <12 V logic-level drive; protected by integrated ±30 V Zener clamp to prevent ESD or overvoltage damage.
S (1, 2, 3)	Source	Return path for load current; used as reference for gate drive; low-inductance routing critical for minimizing switching oscillation.

Key Features

Feature	Design Value
AEC-Q101 qualification	Validated for automotive powertrain and charging systems per stress test requirements including HTGB, HTRB, and temperature cycling.
MDmesh K5 technology	Vertical superjunction structure delivering 30% lower R_DS(on) × area vs. prior-generation 650 V MOSFETs, improving power density in space-constrained designs.
Zener-protected gate	Integrated back-to-back Zeners eliminate need for external gate protection, reducing BOM count and PCB footprint in cost-sensitive applications.
100% avalanche tested	Each unit undergoes unclamped inductive switching test at I_AR = 1.5 A, ensuring field reliability under transient overvoltage conditions.
Low C_iss/C_rss ratio	270 pF / 0.5 pF = 540 - High ratio suppresses Miller-induced false turn-on, enabling stable operation with high dv/dt in half-bridge configurations.

Applications

On-Board Charger (OBC)

Industrial PFC Boost Stage

Use Scenario: 3.3 kW to 6.6 kW bidirectional OBC in EVs, operating in continuous conduction mode (CCM) at 65–100 kHz.

IC Role / Device Role / Timing Role: Primary-side high-voltage switch in interleaved boost PFC and DC-DC LLC resonant converter stages.

Use Value: 0.95 Ω R_DS(on) and 11.7 nC Q_g enable >98% efficiency at full load while maintaining thermal margin below 125 °C junction temperature.

Use Scenario: 3 kW industrial AC-DC front-end with active PFC for PLCs, servo drives, and UPS systems.

IC Role / Device Role / Timing Role: Fast-switching boost switch handling 400 VDC bus with 50 V/ns dv/dt immunity during line transients.

Use Value: 50 V/ns ruggedness and 200 mJ E_AS prevent failure during mains overvoltage events (e.g., lightning surge), eliminating need for snubbers.

Solar Microinverter DC-Link Switch

Server PSU High-Voltage Switch

Use Scenario: Single-phase 300–600 W microinverter with MPPT and transformerless topology feeding 230 VAC grid.

IC Role / Device Role / Timing Role: DC-link switching element in H-bridge inverter stage, commutating at 20–50 kHz with zero-voltage switching assist.

Use Value: 22 pF C_oss and 282 ns t_rr minimize switching losses and reduce EMI filter size versus legacy 650 V MOSFETs.

Use Scenario: 1U server PSU using asymmetric half-bridge or LLC topology with 380–400 VDC intermediate bus.

IC Role / Device Role / Timing Role: High-side switch in resonant tank control, requiring low gate charge and tight parametric consistency across production lots.

Use Value: Tight R_DS(on) distribution (0.95 Ω typ., 1.15 Ω max) and ±10 µA I_GSS ensure predictable thermal behavior and long-term reliability in 24/7 operation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW72N65M5	TO-247-3L, 650 V, 0.052 Ω typ., 72 A - higher current, larger package, 3× higher Q_g (52 nC)	Requires heatsink and mechanical mounting; suited for >5 kW industrial inverters, not space-constrained OBCs	Select when higher current and thermal mass are prioritized over board area and gate drive simplicity.
IPW65R090CFD7	TO-220FP-3L, 650 V, 0.09 Ω typ., 50 A - 10× higher R_DS(on), 3× higher C_iss, no AEC-Q101 rating	Lacks automotive qualification and Zener gate protection; unsuitable for automotive OBC or harsh industrial environments	Choose only for cost-sensitive non-automotive 1–3 kW PFC where qualification and ruggedness are secondary.

Compared with STW72N65M5 and IPW65R090CFD7, STL7LN65K5AG uniquely balances AEC-Q101 compliance, ultra-low R_DS(on) × area, and integrated gate protection in a thermally efficient 5×6 mm surface-mount package-making it optimal for automotive and compact industrial power conversion where board space, reliability, and drive simplicity are critical.

Availability

STL7LN65K5AG is available at Aetrix Electronics and suitable for automotive on-board chargers, industrial PFC boost stages, solar microinverters, and server PSU high-voltage switches requiring stable component supply, long-lifecycle support, and traceable sourcing.

Supply support for STL7LN65K5AG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, MCU, power, and sensor solutions for automotive, industrial, and consumer markets.

This device belongs to ST's MDmesh K5 high-voltage Power MOSFET product line, engineered specifically for high-efficiency, high-density AC-DC and DC-DC conversion in automotive and industrial applications demanding AEC-Q101 reliability and superior FoM.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STL7LN65K5AG supports 3.4 A continuous drain current at T_C = 100 °C, as specified in Table 1 of DS13267 Rev 2. This derating reflects thermal limits of the PowerFLAT 5x6 VHV package and ensures safe operation within SOA boundaries at elevated ambient temperatures.

Does this MOSFET require external gate protection?

No. The device integrates back-to-back Zener diodes between gate and source with ±30 V breakdown voltage, providing inherent protection against ESD and gate overvoltage. No external TVS or resistor-divider network is required for standard gate drive circuits.

How is avalanche ruggedness validated for this part?

Each STL7LN65K5AG unit undergoes 100% unclamped inductive switching (UIS) testing at I_AR = 1.5 A and V_DD = 50 V, delivering 200 mJ single-pulse avalanche energy. Test conditions follow JEDEC JESD24-11 and are documented in Table 3 of the datasheet.

Can this MOSFET be used in synchronous rectification?

Yes. Its low 1.6 V source-drain forward voltage (V_SD) at 5 A and fast 282 ns reverse recovery time (t_rr) at 25 °C make it suitable for high-frequency synchronous rectification in LLC and phase-shifted full-bridge topologies, especially where body-diode conduction occurs during dead-time intervals.

STL7LN65K5AG Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: -

Package/Case:: 8-PowerVDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1.5Ohm @ 2.5A, 10V

Vgs(th) (Max) @ Id:: 5V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:: 11.7 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 270 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 79W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: PowerFlat™ (5x6) VHV

STL7LN65K5AG FAQ

1.How can I place an order for STL7LN65K5AG through Aetrix?

Please submit a Request for Quotation (RFQ) for STL7LN65K5AG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STL7LN65K5AG reliable?

The price and inventory of STL7LN65K5AG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STL7LN65K5AG is usually 5 days.

3.What payment methods are accepted for STL7LN65K5AG?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STL7LN65K5AG transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STL7LN65K5AG?

STL7LN65K5AG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STL7LN65K5AG order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STL7LN65K5AG?

For technical support, including STL7LN65K5AG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STL7LN65K5AG requirements.

6.How does Aetrix verify that STL7LN65K5AG is sourced from the original manufacturer or authorized distributors?

All STL7LN65K5AG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STL7LN65K5AG meets industry standards.

7.What is the process for return or replacement of STL7LN65K5AG?

All STL7LN65K5AG units undergo pre-shipment inspection (PSI). If there is an issue with STL7LN65K5AG, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STL7LN65K5AG part is unused and in its original packaging.

Return procedure for STL7LN65K5AG:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-03 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-01 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

2026-08-28 SR Latch Explained: NOR and NAND Circuits, Truth Tables, and Applications

An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…

2026-08-27 Latch Circuit: SR and D Latches, Truth Tables, Timing, and Applications

Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…

2026-08-21 What Is an LED Driver? Types, Circuits, Dimming, and Selection

An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…

2026-08-18 Operational Amplifier (Op Amp): Basics, Configurations, Feedback and Applications

Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…

2026-08-14 Jumper Cables: How to Use, Connect and Choose Them Safely

Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…