STMicroelectronics STL7N80K5

Overview

STL7N80K5 from STMicroelectronics is an N-channel 800 V, 0.95 Ω typ. R_DS(on), 3.6 A continuous drain current Power MOSFET in PowerFLAT™ 5x6 VHV package, built on MDmesh™ K5 vertical structure. It delivers ultra-low gate charge (13.4 nC), 100% avalanche tested ruggedness (2 A repetitive), and integrated gate-source Zener protection (±30 V), targeting high-voltage switching in offline SMPS and PFC stages.

For engineers reviewing the STL7N80K5 datasheet, STL7N80K5 pinout, STL7N80K5 application, or STL7N80K5 equivalent, key selection criteria include its 800 V V_(BR)DSS, 3 °C/W R_thj-case, 4.5 V/ns diode recovery dv/dt rating, and Zener-protected gate-critical for reliable operation in flyback, LLC resonant, and boost PFC converters with fast transient stress.

Technical Context

This device employs ST's MDmesh™ K5 proprietary vertical superjunction architecture to minimize specific on-resistance (R_{DS(on)} × area) and optimize figure of merit (RDS(on)} × Qg). Its 360 pF Ciss and 1 pF Crss enable fast, low-loss switching at high frequencies up to several hundred kHz.}

The integrated back-to-back gate-source Zener diodes provide ±30 V clamping without external components, while the 315 ns trr (T_j = 25 °C) and 2.8 µC Q_rr support efficient inductive load commutation in hard-switched topologies.

Key Specifications

Pinout & Package

STL7N80K5 uses the PowerFLAT™ 5x6 VHV surface-mount package: thermally enhanced, leadless, with exposed drain pad (pins 5–8) on bottom for PCB heat spreading. Package outline conforms to JEDEC MO-263AA, footprint optimized for thermal via placement under drain pad.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage switching applications.

Compared with STL7N80K5, STP7NK80ZFP trades compactness and thermal performance for mechanical robustness and serviceability, while IPP60R190C7 offers lower R_DS(on) but sacrifices surge immunity and gate protection-making STL7N80K5 optimal for space- and reliability-critical universal-input designs.

Availability

STL7N80K5 is available at Aetrix Electronics and suitable for offline AC-DC adapters, industrial PFC modules, LED driver power stages, and server auxiliary supplies requiring stable component supply across extended production lifecycles.

Supply support for STL7N80K5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, designing and manufacturing analog, microcontroller, power, and sensor solutions for automotive, industrial, and consumer markets.

The MDmesh™ K5 product line targets high-efficiency, high-density power conversion-specifically engineered for 800 V-class superjunction MOSFETs in compact surface-mount packages to replace TO-220 in next-generation adapters and industrial PSUs.

FAQ

What is the maximum safe operating temperature for STL7N80K5?

The STL7N80K5 has a specified operating junction temperature range of –55 °C to +150 °C. Its absolute maximum T_j is 150 °C; sustained operation above this threshold risks parametric shift and accelerated wear-out. Thermal design must ensure T_j remains ≤145 °C under worst-case ambient and load conditions, using the 3 °C/W R_thj-case value with appropriate PCB copper area and thermal vias.

Does STL7N80K5 require an external gate resistor for stability?

Yes-a gate resistor (typically 4.7–10 Ω) is required to dampen ringing caused by gate loop inductance and Crss feedback. The 6 Ω intrinsic gate resistance helps, but layout-dependent parasitics necessitate external control. Values below 4.7 Ω increase risk of oscillation during turn-on; values above 22 Ω excessively slow switching and raise Q_g-related losses.

Can STL7N80K5 replace older MDmesh™ K3 devices in existing designs?

Yes-STL7N80K5 is a direct drop-in replacement for STL7N80K3 in PowerFLAT™ 5x6 VHV footprint, offering identical pinout, improved R_DS(on) (0.95 Ω vs 1.15 Ω typ.), lower Q_g (13.4 nC vs 15.2 nC), and tighter V_GS(th) distribution (3–5 V vs 2.5–4.5 V). No layout or drive circuit changes are needed.

Is the body diode suitable for synchronous rectification?

No-the STL7N80K5 body diode has relatively high V_SD (1.5 V @ 6 A) and long trr (315–480 ns), making it unsuitable for synchronous rectification where low forward drop and fast recovery are essential. It is designed for freewheeling in hard-switched topologies, not bidirectional conduction.