STMicroelectronics STL7NM60N

Overview

STL7NM60N from STMicroelectronics is an N-channel 600 V, 0.805 Ω (typ.), 5.8 A PowerFLAT™ 5×5 MDmesh™ II Power MOSFET optimized for high-efficiency switching converters. It features 100% avalanche tested ruggedness, low gate charge (14 nC), and low input capacitance (363 pF), enabling fast switching in SMPS, PFC stages, and offline adapters.

For engineers reviewing the STL7NM60N datasheet, STL7NM60N pinout, STL7NM60N application, or STL7NM60N equivalent, key selection criteria include R_DS(on) at 10 V gate drive, safe operating area under unclamped inductive load, thermal resistance junction-to-case (1.85 °C/W), and diode recovery performance (t_rr = 213 ns at T_j = 25 °C).

Technical Context

This MOSFET employs ST's second-generation MDmesh™ vertical strip architecture to minimize conduction and switching losses simultaneously. Its 600 V V_DSS, 0.805 Ω R_DS(on) at V_GS = 10 V, and 14 nC total gate charge support high-frequency operation up to 300 kHz in hard-switched topologies.

The integrated source-drain diode exhibits t_rr = 213 ns and Q_rr = 1.5 nC at 25 °C, with soft recovery behavior confirmed by di/dt = 100 A/µs testing. Thermal design is enabled by R_thj-case = 1.85 °C/W and R_thj-amb = 31.3 °C/W on FR-4 (1 in², 2 oz Cu).

Key Specifications

Pinout & Package

STL7NM60N is housed in a surface-mount PowerFLAT™ 5×5 package with exposed drain pad for thermal and electrical performance. The package measures 5.0 mm × 5.0 mm × 0.90 mm (max height) and features a thermally enhanced bottom-side copper pad.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with STL7NM60N, STP7NK60ZFP trades ruggedness and thermal efficiency for package familiarity, while IPP60R099C6 prioritizes ultra-low R_DS(on) at the expense of switching speed and board space-making STL7NM60N optimal for compact, high-frequency, high-reliability 60–150 W converters.

Availability

STL7NM60N is available at Aetrix Electronics and suitable for AC-DC adapters, industrial SMPS, and LED driver designs requiring stable component supply, consistent parametric performance across production lots, and long-term lifecycle support.

Supply support for STL7NM60N includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

This device belongs to ST's MDmesh™ II Power MOSFET product line, engineered specifically for high-efficiency, high-voltage switching power supplies where low R_DS(on), low gate charge, and avalanche ruggedness are critical.

FAQ

What is the maximum recommended gate-source voltage for STL7NM60N?

The absolute maximum V_GS is ±25 V per Table 2. For reliable long-term operation, ST recommends limiting V_GS to ≤ ±20 V in normal use. Gate drive circuits should include clamping (e.g., 18 V Zener) to prevent overshoot beyond 20 V during switching transients, especially with high di/dt layouts.

Can STL7NM60N be used in synchronous rectification configurations?

No - STL7NM60N is a single N-channel high-side switch with source-connected pins and no integrated Schottky or logic-level gate drive capability. Its body diode recovery (t_rr = 213 ns) is optimized for primary-side switching, not secondary-side synchronous rectification, which requires dedicated low-V_th, low-Q_g N-channel FETs with separate gate control.

What is the safe operating area (SOA) limitation at 100 °C case temperature?

At T_C = 100 °C, the continuous drain current is derated to 3.7 A (Table 2). The SOA curve (Figure 2) shows that at V_DS = 300 V, the device supports ≤1.2 A for DC operation, or ≤5.6 A for 10 µs pulses. Derating must follow both current and power limits: P_TOT = 68 W at T_C = 25 °C drops to ~22 W at T_C = 100 °C based on linear thermal interpolation.

Is the PowerFLAT™ 5x5 package lead-free and RoHS-compliant?

Yes - STL7NM60N is manufactured in ECOPACK®-compliant PowerFLAT™ 5×5 packaging, meeting RoHS Directive 2011/65/EU and REACH SVHC requirements. The package uses matte tin (Sn) plating on copper leads and halogen-free molding compound, with full compliance documented in ST's ECOPACK® database at www.st.com/ecopack.