STMicroelectronics STL80N3LLH6

Overview

STL80N3LLH6 from STMicroelectronics is an N-channel PowerFLAT™ 5x6 MOSFET optimized for high-current, low-voltage switching in power conversion stages. It delivers 21 A continuous current at PCB temperature (T_pcb = 25 °C), 30 V drain-source breakdown voltage, and ultra-low R_DS(on) of 4.6 mΩ at V_GS = 10 V - enabling high-efficiency DC-DC converters and motor drive half-bridges.

For engineers reviewing the STL80N3LLH6 datasheet, STL80N3LLH6 pinout, STL80N3LLH6 application, or STL80N3LLH6 equivalent, key selection criteria include its 0.0046 Ω on-resistance, 17 nC total gate charge, 30 V rating, thermal resistance of 31.3 °C/W (junction-to-ambient, FR-4), and PowerFLAT™ 5x6 package suitability for thermally constrained board layouts.

Technical Context

This MOSFET employs ST's 6th-generation STripFET™ VI DeepGATE™ process with a redesigned gate structure to minimize R_DS(on) × Q_g product - a critical figure of merit for synchronous rectification and high-frequency PWM stages. Its low 0.0046 Ω R_DS(on) and 17 nC Q_g enable reduced conduction and switching losses simultaneously.

The device features high avalanche ruggedness and a source-drain diode with 1.1 V forward voltage at 21 A, supporting freewheeling in inductive loads. Thermal performance is defined by R_thj-pcb = 31.3 °C/W on 1 in² FR-4 (2 oz Cu), making it suitable for compact, unheatsinked PCB-level power designs.

Key Specifications

Pinout & Package

STL80N3LLH6 uses the PowerFLAT™ 5x6 surface-mount package (5.2 mm × 6.15 mm × 1.0 mm height), featuring exposed drain pad for enhanced thermal dissipation and bottom-side source/gate terminals.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IRL8726PbF and DMTH3007LPS-13, STL80N3LLH6 uniquely balances 30 V rating, 4.6 mΩ on-resistance, and 31.3 °C/W thermal resistance in a compact 5x6 mm footprint - making it optimal for space-constrained, high-current 24 V power stages where both voltage margin and thermal performance are critical.

Availability

STL80N3LLH6 is available at Aetrix Electronics and suitable for DC-DC converters, BLDC motor drives, hot-swap controllers, and server load switches requiring stable component supply and long-term industrial availability.

Supply support for STL80N3LLH6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs for automotive, industrial, and consumer markets.

This device belongs to ST's Power MOSFET portfolio built on STripFET™ VI DeepGATE™ technology, engineered specifically for high-efficiency, high-density power conversion in 12–48 V systems.

FAQ

Is STL80N3LLH6 suitable for 3.3 V logic-level gate drive?

Yes - its gate threshold voltage (V_GS(th)) ranges from 1.0 V to 2.5 V, ensuring full enhancement with 3.3 V gate drive. However, R_DS(on) increases to 6.7 mΩ at V_GS = 4.5 V, so conduction loss rises ~45% versus 10 V drive. For optimal efficiency, use 5 V or higher gate voltage where possible.

What is the maximum continuous current achievable with STL80N3LLH6 on a standard PCB?

At T_pcb = 25 °C on a 1 in² FR-4 board with 2 oz copper, the datasheet specifies 21 A continuous drain current. This assumes proper thermal pad soldering and no additional heatsinking. At T_pcb = 70 °C, derated current drops to 15.7 A per the R_thj-pcb-based rating.

Does STL80N3LLH6 include an integrated body diode, and what are its recovery characteristics?

Yes - it integrates a source-drain diode with 1.1 V forward voltage at 21 A and 24 ns reverse recovery time (t_rr) at di/dt = 100 A/µs. Its 16.8 nC reverse recovery charge (Q_rr) is low for its class, reducing switching loss and EMI in synchronous rectifier applications.

Can STL80N3LLH6 replace older STPower MOSFETs like STL60N3LLH5 in existing designs?

Yes - it is a direct upgrade to STL60N3LLH5 (60 A, 30 V, 5.2 mΩ), offering 12% lower R_DS(on) and identical PowerFLAT™ 5x6 footprint and pinout. No layout changes are needed, and improved thermal performance allows higher current capability or relaxed thermal design margins.