STMicroelectronics STL80N4LLF3

Overview

STL80N4LLF3 from STMicroelectronics is an N-channel Power MOSFET optimized for high-efficiency DC-DC conversion, featuring 40 V V_DS, 0.0042 Ω R_DS(on) at V_GS = 10 V, 80 A continuous drain current at T_C = 25 °C, and a PowerFLAT™ (6×5) package with 1.56 °C/W junction-to-case thermal resistance. It delivers low conduction and switching losses in compact board space-constrained power stages.

For engineers reviewing the STL80N4LLF3 datasheet, STL80N4LLF3 pinout, STL80N4LLF3 application, or STL80N4LLF3 equivalent, key selection criteria include its 4.5 V gate drive capability, 21.5 nC total gate charge, 2530 pF input capacitance, and suitability for synchronous buck converters operating up to 1 MHz with tight thermal constraints.

Technical Context

This MOSFET employs ST's STripFET™ III process to achieve ultra-low R_DS(on) and minimized gate charge-critical for high-frequency, high-current switching in point-of-load regulators. Its die-to-footprint ratio maximizes current density without compromising thermal performance.

The PowerFLAT™ (6×5) package enables direct PCB copper thermal spreading, delivering 31.2 °C/W junction-to-PCB thermal resistance on a 1 in² FR-4 board with 2 oz Cu. The integrated source-drain diode exhibits 1.2 V forward voltage at 20 A and 43 ns reverse recovery time under defined inductive switching conditions.

Key Specifications

Pinout & Package

STL80N4LLF3 uses the PowerFLAT™ (6×5) surface-mount package: 6 mm × 5 mm footprint, 0.83 mm typical height, exposed drain pad for thermal and electrical connection, and three terminals-Drain (D), Source (S), Gate (G)-arranged in a single-row configuration with Drain occupying the full bottom side.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IRL8726PbF and DMTH8006LSD, STL80N4LLF3 uniquely balances ultra-low R_DS(on), low Q_g, and chip-scale thermal resistance-making it optimal for space-constrained, high-current DC-DC stages where both conduction and switching losses must be minimized simultaneously.

Availability

STL80N4LLF3 is available at Aetrix Electronics and suitable for server VRM power stages, automotive ADAS camera supplies, industrial PLC I/O modules, and USB-C PD sink converters requiring stable component supply and long-term production continuity.

Supply support for STL80N4LLF3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

The STL80N4LLF3 belongs to ST's STripFET™ Power MOSFET product line, engineered specifically for high-efficiency, high-frequency DC-DC conversion in space- and thermally constrained applications such as computing power delivery and automotive infotainment systems.

FAQ

What is the maximum continuous drain current for STL80N4LLF3 at 100 °C case temperature?

The STL80N4LLF3 supports 50 A continuous drain current at T_C = 100 °C, as specified in Table 1 of the datasheet. This derating reflects thermal limitations of the PowerFLAT™ (6×5) package and requires adequate PCB copper area and airflow to sustain. At 25 °C case temperature, the rating rises to 80 A.

Does STL80N4LLF3 have avalanche ruggedness rated in the datasheet?

No, the official datasheet does not specify single-pulse or repetitive avalanche energy ratings (E_AS) for STL80N4LLF3. Its safe operating area (SOA) curve in Figure 1 defines voltage–current limits under unclamped inductive switching, but designers must avoid operation beyond those boundaries without external clamping.

Can STL80N4LLF3 be used with 3.3 V gate drive in logic-level applications?

While the gate threshold voltage V_GS(th) is 1 V (min), R_DS(on) is only guaranteed at V_GS = 4.5 V and 10 V. At 3.3 V, R_DS(on) increases significantly-typical data shows ~0.007 Ω-raising conduction loss by >65 %. It is not recommended for sustained 3.3 V gate drive without derating current.

Is the PowerFLAT™ (6×5) package lead-free and RoHS-compliant?

Yes, STL80N4LLF3 is supplied in an ECOPACK®-compliant PowerFLAT™ (6×5) package with lead-free second-level interconnect, meeting RoHS Directive 2011/65/EU and JEDEC JESD97 marking standards. The inner box label indicates the lead-free category and maximum soldering profile compliance.