STMicroelectronics STL80N75F6

Overview

STL80N75F6 from STMicroelectronics is an N-channel Power MOSFET using STripFET™ F6 trench-gate technology, rated for 75 V V_DS, 4.5 mΩ typ. R_DS(on) at V_GS = 10 V and I_D = 9 A, 18 A continuous drain current at T_pcb = 25 °C, and housed in a PowerFLAT™ 5x6 package. It delivers high avalanche ruggedness (E_AS = 730 mJ) and low gate charge (Q_g = 78 nC), enabling efficient switching in DC-DC converters and motor control stages.

For engineers reviewing the STL80N75F6 datasheet, STL80N75F6 pinout, STL80N75F6 application, or STL80N75F6 equivalent, key selection criteria include R_DS(on) vs. thermal resistance (R_thj-pcb = 31.3 °C/W), unclamped inductive switching capability, gate drive voltage compatibility (±20 V), and PCB-mount thermal performance in compact power stages.

Technical Context

This MOSFET employs a refined trench-gate structure that reduces channel resistance and gate-to-drain capacitance (C_rss = 185 pF), directly improving switching efficiency and reducing Miller-induced turn-off delay. Its low Q_gd/Q_g ratio (15/78 nC) supports fast, controllable hard-switching with minimal shoot-through risk.

The device is characterized for two thermal operating conditions: junction-to-case (R_thj-case = 1.56 °C/W) for heatsink-mounted use, and junction-to-PCB (R_thj-pcb = 31.3 °C/W on 1 in² FR-4, 2 oz Cu), defining its suitability for surface-mount-only power designs without external heatsinks.

Key Specifications

Pinout & Package

STL80N75F6 is packaged in PowerFLAT™ 5x6 (Type S-C), a 8-pin, exposed-drain, surface-mount package with integrated thermal pad. The package enables high-current routing through pins 5–8 (drain) while minimizing parasitic inductance and maximizing PCB heat spreading.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IRF8721PBF and DMTH8006LPS-13, STL80N75F6 offers the lowest R_DS(on) in its package class and highest avalanche energy rating, making it optimal for thermally constrained, high-current, inductive-load applications where reliability under transient stress is critical.

Availability

STL80N75F6 is available at Aetrix Electronics and suitable for industrial motor drives, telecom DC-DC converters, and PLC output modules requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.

Supply support for STL80N75F6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

This device belongs to ST's STripFET™ F6 Power MOSFET product line, engineered specifically for high-efficiency, high-density power conversion in space-constrained industrial and telecom equipment where low R_DS(on) and robust avalanche performance are mandatory.

FAQ

What is the maximum safe operating temperature for STL80N75F6 in continuous operation?

The absolute maximum junction temperature is 175 °C, but continuous operation should be limited to T_j ≤ 150 °C to ensure long-term reliability. At T_pcb = 25 °C, the device dissipates up to 4 W before reaching this limit, based on R_thj-pcb = 31.3 °C/W. Derating is required above 25 °C ambient or reduced PCB copper area.

Can STL80N75F6 be used in synchronous rectification without a dedicated gate driver?

No. While its V_GS(th) (2–4 V) allows basic turn-on with logic-level signals, synchronous rectification requires precise timing, fast turn-off, and negative gate drive to prevent shoot-through. A dedicated gate driver (e.g., IRS2186) is required to manage Q_g = 78 nC and suppress Miller turn-on during high dV/dt transitions.

Does STL80N75F6 have integrated ESD protection on the gate?

The device meets HBM ESD classification of Class 1C (≥1 kV), per JEDEC JS-001. However, no on-chip Zener or active clamp is present-the gate oxide relies on process-level robustness. External gate protection (e.g., 10 Ω series resistor + 12 V TVS) is recommended in automated assembly or high-humidity environments.

How does the PowerFLAT™ 5x6 package affect PCB layout for thermal performance?

The exposed drain pad (pins 5–8) must be soldered to a minimum 1 in² copper pour on the top layer, connected via ≥6 thermal vias (0.3 mm diameter, filled or plated) to inner ground planes. Reducing copper area below 0.5 in² increases R_thj-pcb beyond 50 °C/W, risking thermal runaway at >3 A continuous current.