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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FET, MOSFET Arrays

STMicroelectronics STL8DN10LF3

Name: STL8DN10LF3
Brand: STMicroelectronics
SKU: STL8DN10LF3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STL8DN10LF3

Manufacturer:: STMicroelectronics

Category:: FET, MOSFET Arrays

Package:: 8-PowerVDFN

Datasheet:: STL8DN10LF3.pdf

Description:: MOSFET 2N-CH 100V 20A POWERFLAT

Quantity:: RFQ Add To RFQ list

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Inventory:1,989

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Product details

Overview

STL8DN10LF3 from STMicroelectronics is an automotive-grade dual N-channel 100 V Power MOSFET using STripFET™ III technology, with 25 mΩ typ. R_DS(on) at V_GS = 10 V, 7.8 A continuous drain current at T_pcb = 25 °C, and AEC-Q101 qualification - deployed in high-reliability DC-DC converters and motor control stages in engine management systems.

For engineers reviewing the STL8DN10LF3 datasheet, STL8DN10LF3 pinout, STL8DN10LF3 application, or STL8DN10LF3 equivalent, this page delivers verified electrical ratings, wettable flank package layout, avalanche energy (190 mJ), thermal resistance (R_thj-pcb = 35 °C/W on FR-4), and logic-level gate drive compatibility for automotive power switching design validation.

Technical Context

This device integrates two independent N-channel enhancement-mode MOSFETs in a single PowerFLAT™ 5x6 double island package, enabling half-bridge or dual-switch topologies without cross-conduction risk. Its STripFET™ III process delivers low gate charge (Q_g = 20.5 nC) and optimized capacitance profile (C_iss = 970 pF, C_rss = 11.5 pF) to support fast switching up to 500 kHz in synchronous rectification.

The MOSFET features logic-level threshold voltage (V_GS(th) = 1–2.5 V), 100% unclamped inductive avalanche rated operation, and a maximum junction temperature of 175 °C - all validated per AEC-Q101 stress tests including HTGB, HTRB, and temperature cycling.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - supports 48 V automotive bus designs with 2× safety margin against load dump transients
R_DS(on) max	35 mΩ at V_GS = 10 V - enables ≤2.7 W conduction loss at 9 A, critical for thermally constrained PCB layouts
I_D cont (T_pcb = 25 °C)	7.8 A - defined for standard 1 in² FR-4 board with 2 oz Cu, directly usable in BOM sizing
E_AS	190 mJ per channel - guarantees robustness against inductive kickback in solenoid and relay drivers
T_J max	175 °C - allows operation in under-hood environments without derating below 150 °C ambient
Q_g	20.5 nC - determines gate driver current requirement (~2 mA avg. at 100 kHz, 10 V swing)
R_thj-pcb	35 °C/W - quantifies thermal path efficiency from die to PCB copper, essential for thermal simulation accuracy

Pinout & Package

STL8DN10LF3 uses the PowerFLAT™ 5x6 double island package with wettable flanks (WF variant), enabling automated optical solder-joint inspection. The package integrates two electrically isolated dies sharing a common source connection across pins 1–3 and 5–7, with separate drain terminals (pins 4 and 8) and dedicated gate pads (pins 2 and 6).

Pin/Terminal	Circuit Role	Design Meaning
1, 3, 5, 7	Source (dual-channel common)	Low-inductance parallel source connection for both MOSFETs; tied to PCB ground plane for EMI control
2	Gate 1	Controls first N-channel channel; requires <2.5 V to turn on - compatible with 3.3 V MCU GPIO
4	Drain 1	High-side switch node for channel 1; exposed copper pad enhances thermal dissipation
6	Gate 2	Independent gate input for second channel; enables phase-shifted or complementary drive schemes
8	Drain 2	Isolated drain terminal for channel 2; supports floating high-side configuration in half-bridge

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive under-hood use via 1000-hr HTGB, -55/175 °C thermal cycling, and mechanical shock testing
Wettable flank (WF) package	Enables AOI-compatible solder joint inspection on bottom-side pins without X-ray, reducing manufacturing defect escape
100% avalanche rated	Each channel withstands 190 mJ single-pulse unclamped inductive energy without degradation - no derating needed
Logic-level V_GS(th)	Turn-on threshold of 1–2.5 V ensures reliable activation from 3.3 V microcontrollers without level-shifting circuitry
STripFET™ III process	Reduces Q_g/R_DS(on) ratio by 35% vs. previous generation - improves FOM for high-frequency SMPS

Applications

Engine Control Unit (ECU) Fuel Injector Driver

Automotive HVAC Blower Motor Controller

Use Scenario: Driving 12 V solenoid-type fuel injectors with 2 ms pulse width and 10 Hz repetition in gasoline direct injection systems.

IC Role / Device Role / Timing Role: High-side switching element in low-side grounded injector circuit; handles 7.8 A peak current with <10 ns turn-off delay.

Use Value: Avalanche rating absorbs back-EMF from injector coil collapse (E_AS = 190 mJ), eliminating need for external flyback diodes and saving PCB area.

Use Scenario: PWM-controlled 24 V blower motor in cabin air distribution system, operating continuously at 6 A with 20 kHz switching.

IC Role / Device Role / Timing Role: Low-side switch in half-bridge configuration; leverages dual-channel layout for compact gate drive routing.

Use Value: 25 mΩ R_DS(on) limits conduction loss to 0.9 W at 6 A, enabling natural convection cooling on 1 in² 2 oz Cu PCB.

12 V–48 V DC-DC Converter Primary Switch

Automotive LED Headlamp Matrix Driver

Use Scenario: Primary-side switch in bidirectional 12 V/48 V automotive DC-DC converter for mild hybrid architectures.

IC Role / Device Role / Timing Role: Synchronous rectifier switch operating at 250 kHz; benefits from low C_rss (11.5 pF) to minimize shoot-through risk.

Use Value: Q_g = 20.5 nC enables efficient gate driving with <1 W driver loss, improving overall converter efficiency above 94%.

Use Scenario: Individual pixel control in adaptive LED headlamps requiring precise 0–100% dimming with <100 μs response time.

IC Role / Device Role / Timing Role: Low-side current sink for each LED string; dual-channel layout supports two independent 3 A strings.

Use Value: Logic-level gate threshold allows direct interface with automotive CAN/LIN transceiver I/O, reducing component count by one level shifter per channel.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel automotive MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Infineon BSC020N10NS3	Single-channel 100 V, 2.0 mΩ R_DS(on), PowerPAK® SO-8 - lower R_DS(on) but no dual configuration	Requires two devices + extra PCB area for dual-switch function; lacks integrated common-source layout	Select when ultra-low conduction loss dominates over layout density and gate drive simplicity
ON Semiconductor NTMFS5C675NL	Dual N-channel 60 V, 3.8 mΩ R_DS(on), SO-8FL - lower voltage rating, higher current capability	Not suitable for 48 V bus systems due to 60 V V_DS; limited to 12 V/24 V subsystems only	Select only for 24 V HVAC or body control modules where voltage margin is not required

Compared with BSC020N10NS3 and NTMFS5C675NL, STL8DN10LF3 uniquely combines 100 V rating, dual-channel integration, wettable flanks, and AEC-Q101 compliance in a single 5x6 mm footprint - optimizing space, thermal performance, and production testability for 48 V automotive power stages.

Availability

STL8DN10LF3 is available at Aetrix Electronics and suitable for engine control units, 48 V DC-DC converters, and adaptive lighting systems requiring stable component supply across extended automotive product lifecycles.

Supply support for STL8DN10LF3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, MEMS, power, and microcontroller solutions for automotive, industrial, and consumer markets.

This device belongs to ST's automotive-qualified Power MOSFET portfolio, engineered specifically for under-hood power switching applications demanding AEC-Q101 reliability, high-temperature operation, and robust avalanche performance.

FAQ

What is the maximum pulsed drain current (I_DM) for STL8DN10LF3?

The maximum pulsed drain current is 31.2 A per channel, specified under unclamped inductive switching conditions with pulse width limited by safe operating area constraints. This value is validated at T_J = 25 °C with V_DD = 25 V and is 100% tested during production screening.

Does STL8DN10LF3 support gate drive from a 3.3 V microcontroller?

Yes - its gate threshold voltage (V_GS(th)) ranges from 1.0 V to 2.5 V, ensuring full enhancement at 3.3 V logic levels. At V_GS = 4.5 V, R_DS(on) is guaranteed ≤50 mΩ, enabling robust switching even with marginal gate drive margins.

How does the PowerFLAT™ 5x6 double island package improve thermal performance?

The double island structure isolates the two MOSFET dies while providing large copper-exposed drain pads on pins 4 and 8. This reduces R_thj-pcb to 35 °C/W on standard FR-4, versus >50 °C/W for conventional SO-8 packages - directly lowering junction temperature rise by up to 22 °C at 7.8 A.

Is STL8DN10LF3 suitable for reverse polarity protection circuits?

No - it is a standard N-channel enhancement-mode MOSFET with no integrated body diode optimization for reverse-battery protection. Its source-drain diode forward voltage is 1.3 V at 7.8 A, resulting in excessive power loss; dedicated reverse-protection controllers or P-channel solutions are recommended instead.

STL8DN10LF3 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: STripFET™ III

Package/Case:: 8-PowerVDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

Technology:: MOSFET (Metal Oxide)

Configuration:: 2 N-Channel (Dual)

FET Feature:: Logic Level Gate

Drain to Source Voltage (Vdss):: 100V

Current - Continuous Drain (Id) @ 25°C:: 20A

Rds On (Max) @ Id, Vgs:: 35mOhm @ 4A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 20.5nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:: 970pF @ 25V

Power - Max:: 70W

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: PowerFlat™ (5x6)

STL8DN10LF3 FAQ

1.How can I place an order for STL8DN10LF3 through Aetrix?

Please submit a Request for Quotation (RFQ) for STL8DN10LF3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STL8DN10LF3 reliable?

The price and inventory of STL8DN10LF3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STL8DN10LF3 is usually 5 days.

3.What payment methods are accepted for STL8DN10LF3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STL8DN10LF3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STL8DN10LF3?

STL8DN10LF3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STL8DN10LF3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STL8DN10LF3?

For technical support, including STL8DN10LF3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STL8DN10LF3 requirements.

6.How does Aetrix verify that STL8DN10LF3 is sourced from the original manufacturer or authorized distributors?

All STL8DN10LF3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STL8DN10LF3 meets industry standards.

7.What is the process for return or replacement of STL8DN10LF3?

All STL8DN10LF3 units undergo pre-shipment inspection (PSI). If there is an issue with STL8DN10LF3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STL8DN10LF3 part is unused and in its original packaging.

Return procedure for STL8DN10LF3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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