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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STL8N65M5

Name: STL8N65M5
Brand: STMicroelectronics
SKU: STL8N65M5
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STL8N65M5

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: 14-PowerVQFN

Datasheet:: STL8N65M5.pdf

Description:: MOSFET N-CH 650V 7A POWERFLAT

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STL8N65M5 from STMicroelectronics is an N-channel 650 V, 0.56 Ω (typ), 7 A MDmesh™ V Power MOSFET in PowerFLAT™ 5x5 package, designed for high-voltage switching in offline SMPS, PFC stages, and industrial inverters. It features 150 °C max junction temperature, 15 V gate threshold, and 100% avalanche tested ruggedness.

For engineers reviewing the STL8N65M5 datasheet, STL8N65M5 pinout, STL8N65M5 application, or STL8N65M5 equivalent, key selection criteria include R_DS(on) vs. thermal resistance (R_thj-case = 1.78 °C/W), dv/dt capability (15 V/ns), unclamped inductive switching robustness (E_AS = 120 mJ), and gate charge (Q_g = 15 nC) for ZVS/ZCS topology compatibility.

Technical Context

This MDmesh™ V device uses ST's proprietary vertical silicon process combined with PowerMESH™ horizontal layout to achieve industry-leading R_DS(on) × area efficiency. Its 650 V V_DSS rating supports universal AC input designs up to 400 V DC bus, with guaranteed 710 V breakdown at T_jmax.

The PowerFLAT™ 5x5 package enables low-inductance source connections and direct PCB thermal coupling, supporting 70 W total dissipation at case temperature. Internal body diode exhibits fast reverse recovery (t_rr = 200 ns @ T_j = 25 °C) and low Q_rr (1.6 µC), reducing switching losses in hard-commutated topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	650 V - Supports 380–400 V DC bus in universal-input offline converters without derating.
R_DS(on) max	0.6 Ω @ V_GS = 10 V, I_D = 3.5 A - Enables <1.5 W conduction loss at 7 A continuous drain current.
I_D (T_C = 25 °C)	7 A - Rated per R_thj-case limit; usable in heatsinked high-power switch-mode applications.
E_AS	120 mJ - Confirmed single-pulse avalanche energy at T_j = 25 °C, ID = 2 A, V_DD = 50 V - ensures reliability under transient overvoltage.
dv/dt capability	15 V/ns - Measured at V_DD = 400 V, I_SD ≤ 7 A, di/dt ≤ 400 A/µs - suppresses false turn-on in high-noise environments.
Q_g	15 nC - Total gate charge at V_DD = 520 V, I_D = 3.5 A - determines driver strength requirement for <100 ns switching transitions.
t_rr	200 ns - Reverse recovery time of integrated body diode at I_SD = 7 A, di/dt = 100 A/µs - critical for synchronous rectification and LLC resonant control.

Pinout & Package

STL8N65M5 is housed in a surface-mount PowerFLAT™ 5x5 package with exposed drain pad for thermal and electrical performance. The 14-pin configuration provides parallel drain terminals and multiple source connections to minimize package inductance and improve current sharing.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 10, 9, 8, 5	Source (S)	Multiple low-inductance source paths reduce common-source inductance and improve gate drive stability.
4	No connection (NC)	Internally isolated terminal; must remain unconnected on PCB to avoid parasitic coupling.
14, 13, 12, 7, 6	Drain (D)	Parallel drain terminals connect directly to exposed copper pad - primary thermal path and high-current return.
11	Gate (G)	Single gate input with intrinsic R_G = 2.4 Ω - compatible with standard 10 V logic-level drivers without external series resistance.

Key Features

Feature	Design Value
Worldwide best R_DS(on) × area	0.56 Ω in 5×5 mm² footprint - delivers highest power density among 650 V silicon MOSFETs.
100% avalanche tested	Each unit validated to E_AS ≥ 120 mJ - eliminates screening failures in unclamped inductive switching.
High dv/dt immunity	15 V/ns rated - prevents spurious turn-on during fast voltage transients in bridge-leg configurations.
Low Q_gd/Q_g ratio	6 nC / 15 nC = 0.4 - improves Miller immunity and enables stable operation at high dV/dt edge rates.
Optimized body diode	t_rr = 200 ns, Q_rr = 1.6 µC - reduces commutation loss and EMI in flyback and resonant converters.

Applications

Server PSU Primary Switch

Industrial Motor Drive Inverter

Use Scenario: High-efficiency 1 kW+ server power supply operating from 90–264 V AC input with active PFC and LLC resonant DC-DC stage.

IC Role / Device Role / Timing Role: Main switch in boost PFC stage and upper-leg switch in half-bridge LLC primary.

Use Value: Low R_DS(on) minimizes conduction loss at 7 A RMS; fast body diode enables zero-voltage switching in LLC, reducing EMI and improving efficiency above 95%.

Use Scenario: 3-phase 5–10 kW variable-frequency drive for HVAC compressors and pumps with 400 V DC bus.

IC Role / Device Role / Timing Role: Phase-leg high-side switch in IGBT/MOSFET hybrid inverter output stage.

Use Value: Avalanche ruggedness ensures survival during motor short-circuit events; 15 V/ns dv/dt rating prevents shoot-through in high-dV/dt PWM modulation.

Telecom Rectifier Module

EV Charger Onboard PFC

Use Scenario: 3 kW telecom rectifier converting -48 V DC backup to 380 V DC bus for distributed power architecture.

IC Role / Device Role / Timing Role: Boost switch in interleaved PFC front-end with 100 kHz switching frequency.

Use Value: Low gate charge (15 nC) allows efficient driving with low-power gate drivers; PowerFLAT™ thermal path sustains 70 W dissipation without heatsink.

Use Scenario: 6.6 kW onboard EV charger with dual-phase interleaved PFC for Level 2 AC charging.

IC Role / Device Role / Timing Role: High-voltage switching element in each PFC phase leg, operating at 65–100 kHz.

Use Value: 650 V rating accommodates peak line voltage surges; 1.78 °C/W R_thj-case enables compact thermal design with minimal copper area.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPW65R041CFD7	650 V, 0.041 Ω, TO-247 package, CoolMOS™ CFD7 - lower R_DS(on) but larger footprint and higher gate charge (42 nC).	Requires larger heatsink and stronger gate driver; better suited for <50 kHz fixed-frequency topologies.	Select when lowest conduction loss dominates over switching loss and board space is unconstrained.
IXTH8N65X2	650 V, 0.58 Ω, TO-247 package, HiPerFET X2 - similar R_DS(on), higher Q_g (22 nC), no avalanche rating.	Lacks 100% avalanche test; unsuitable for unclamped inductive loads or surge-prone industrial environments.	Select only for cost-sensitive, non-avalanche-critical applications where TO-247 mounting is preferred.

Compared with IPW65R041CFD7 and IXTH8N65X2, STL8N65M5 offers superior power density via PowerFLAT™ 5x5, lower gate drive demand (15 nC), and guaranteed avalanche ruggedness - making it optimal for space-constrained, high-reliability PFC and inverter designs.

Availability

STL8N65M5 is available at Aetrix Electronics and suitable for server power supplies, industrial motor drives, telecom rectifiers, and EV onboard chargers requiring stable component supply across multi-year production cycles.

Supply support for STL8N65M5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, delivering automotive, industrial, and power discrete solutions with focus on energy efficiency and system integration.

This device belongs to ST's MDmesh™ V high-voltage MOSFET product line, engineered specifically for high-density, high-efficiency switching power conversion in 650 V applications including PFC, SMPS, and motor control.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STL8N65M5 supports 4.4 A continuous drain current at T_C = 100 °C, as specified in Table 2 of the datasheet. This rating is derived from thermal limits using R_thj-case = 1.78 °C/W and T_jmax = 150 °C, ensuring safe operation without derating in thermally managed designs.

Is the body diode suitable for synchronous rectification?

No - the integrated body diode is optimized for freewheeling and clamping, not synchronous rectification. Its t_rr = 200 ns and Q_rr = 1.6 µC are typical for high-voltage MOSFETs but exceed requirements for low-loss SR; external Schottky or GaN FETs are recommended for that function.

Can STL8N65M5 be used in place of older STL8N65M2?

Yes - STL8N65M5 replaces STL8N65M2 with identical pinout, package, and voltage rating, but offers improved R_DS(on) (0.56 Ω vs. 0.65 Ω), lower gate charge (15 nC vs. 18 nC), and enhanced dv/dt immunity (15 V/ns vs. 12 V/ns), enabling higher efficiency and reliability.

Does this MOSFET require gate resistors for stability?

A gate resistor of 4.7 Ω is used in the datasheet's switching characterization (Table 6), confirming stable operation without oscillation. However, for hard-switched bridge applications, a 5–10 Ω series resistor is recommended to dampen ringing caused by PCB trace inductance and gate-drain capacitance interaction.

STL8N65M5 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ V

Package/Case:: 14-PowerVQFN

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 1.4A (Ta), 7A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 600mOhm @ 3.5A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 15 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 690 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta), 70W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerFLAT™ (5x5)

STL8N65M5 FAQ

1.How can I place an order for STL8N65M5 through Aetrix?

Please submit a Request for Quotation (RFQ) for STL8N65M5 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STL8N65M5 reliable?

The price and inventory of STL8N65M5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STL8N65M5 is usually 5 days.

3.What payment methods are accepted for STL8N65M5?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STL8N65M5 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STL8N65M5?

STL8N65M5 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STL8N65M5 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STL8N65M5?

For technical support, including STL8N65M5 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STL8N65M5 requirements.

6.How does Aetrix verify that STL8N65M5 is sourced from the original manufacturer or authorized distributors?

All STL8N65M5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STL8N65M5 meets industry standards.

7.What is the process for return or replacement of STL8N65M5?

All STL8N65M5 units undergo pre-shipment inspection (PSI). If there is an issue with STL8N65M5, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STL8N65M5 part is unused and in its original packaging.

Return procedure for STL8N65M5:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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