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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STL8P2UH7

Name: STL8P2UH7
Brand: STMicroelectronics
SKU: STL8P2UH7
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STL8P2UH7

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: 6-PowerWDFN

Datasheet:: STL8P2UH7.pdf

Description:: MOSFET P-CH 20V 8A POWERFLAT

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STL8P2UH7 from STMicroelectronics is a P-channel enhancement-mode Power MOSFET in PowerFLAT™ 2x2 package, rated for 20 V V_DS, 0.0195 Ω typical R_DS(on) at 4.5 V V_GS, and 8 A continuous drain current at T_pcb = 25 °C. It features ultra logic-level gate drive compatibility (V_GS(th) down to 0.4 V), low gate charge (22 nC), and optimized switching performance for high-efficiency DC-DC conversion and load switching.

For engineers reviewing the STL8P2UH7 datasheet, STL8P2UH7 pinout, STL8P2UH7 application, or STL8P2UH7 equivalent, this device is selected for compact, low-voltage P-channel switch designs requiring fast turn-off, low conduction loss, and thermal robustness on FR-4 PCBs with minimal copper area.

Technical Context

This P-channel MOSFET operates with reversed polarity conventions: source is connected to higher potential (e.g., V_IN), drain to load, enabling high-side switching without level-shifting circuitry. Its DeepGATE™ and STripFET™ VII process delivers low R_DS(on) × Q_g figure-of-merit (0.43 Ω·nC) and reduced output capacitance (C_oss = 220 pF).

The device supports logic-level drive down to 1.5 V (R_DS(on) = 0.036 Ω @ 1.8 V), exhibits low reverse recovery charge (Q_rr = 5.9 nC), and maintains stable threshold voltage across temperature (±15% variation from –55 °C to 125 °C), making it suitable for battery-powered systems with wide ambient ranges.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	20 V - Maximum drain-source blocking voltage; defines safe operation in 12 V and lower battery/supply rails.
R_DS(on) typ.	0.0195 Ω @ V_GS = 4.5 V - Enables <150 mW conduction loss at 8 A, critical for thermally constrained layouts.
I_D cont.	8 A @ T_pcb = 25 °C - Sustains full-load current with 2.4 W total dissipation on 1 in² FR-4 board.
Q_g	22 nC - Reduces gate drive power and enables >1 MHz switching in synchronous buck high-side configurations.
R_thj-pcb	52 °C/W - Junction-to-PCB thermal resistance measured on standard 2 oz Cu board; enables accurate thermal design without heatsink.
V_GS(th)	0.4–1.0 V - Ultra-low threshold allows direct interface with 1.8 V/2.5 V/3.3 V microcontrollers and PMICs.
C_iss	2390 pF - Input capacitance impacts gate drive strength requirements and EMI filtering needs in hard-switched topologies.

Pinout & Package

STL8P2UH7 uses the PowerFLAT™ 2x2 surface-mount package (8L2U marking), featuring an exposed drain pad for thermal and electrical connection. The package has no leads and relies on bottom-side soldering for mechanical, thermal, and electrical integrity.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5, 6	Drain (D)	Internally connected to exposed copper pad; primary current path and thermal conduction path to PCB.
7	Source (S)	Top-side terminal; connects to input rail in high-side switch configuration.
8	Gate (G)	Control terminal; requires no level shifter for 1.8–4.5 V logic drive due to ultra-low V_GS(th).

Key Features

Feature	Design Value
Ultra logic-level gate drive	V_GS(th) as low as 0.4 V enables direct MCU GPIO control without external drivers in portable systems.
Low R_DS(on) × Q_g FoM	0.43 Ω·nC - balances conduction and switching losses for optimal efficiency in 500 kHz–2 MHz DC-DC converters.
Optimized body diode	Q_rr = 5.9 nC and t_rr = 15.8 ns - reduces shoot-through risk and EMI in synchronous rectification and H-bridge freewheeling.
Thermally enhanced PowerFLAT™ 2x2	R_thj-pcb = 52 °C/W on 1 in² FR-4 - eliminates need for thermal vias or large copper pours in space-constrained designs.

Applications

USB Power Delivery Switch

Load Switch in Wearables

Use Scenario: High-side power path control for USB-C PD input with overvoltage and inrush protection.

IC Role / Device Role: P-channel high-side switch enabling bidirectional fault isolation and seamless source/sink role swapping.

Use Value: Low R_DS(on) minimizes voltage drop across switch (<160 mV @ 8 A), preserving PD negotiation margin and reducing thermal stress on PCB.

Use Scenario: Controlled power-up of sensor subsystems in fitness trackers and hearables.

IC Role / Device Role: Logic-level load switch activated by 1.8 V ARM Cortex-M0+ GPIO without level translation.

Use Value: Sub-1 V V_GS(th) ensures reliable turn-on at battery voltages down to 2.7 V, extending runtime in deep-discharge conditions.

Industrial Sensor Node Supply

Smart Home Actuator Driver

Use Scenario: Remote I/O module with isolated 3.3 V supply sequencing and fault-containment capability.

IC Role / Device Role: High-side switch for regulated 3.3 V rail, controlled via opto-isolated enable signal.

Use Value: 8 A rating supports burst-current loads (e.g., RF transceivers), while low C_iss limits capacitive coupling noise into analog sensor circuits.

Use Scenario: Motor and solenoid driver stage in battery-operated smart locks and blinds.

IC Role / Device Role: P-channel switch controlling ground-referenced actuator coil with integrated body diode freewheeling.

Use Value: Fast t_f = 84.5 ns and low Q_rr suppress voltage spikes during coil de-energization, eliminating need for external flyback diodes.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Infineon BSS84	R_DS(on) = 10 Ω @ V_GS = 4.5 V; 130 mA I_D; SOT-23 package	Only suitable for signal-level switching (<200 mA); not a power replacement	Select only for low-current bias/gate control, not load switching.
Vishay SI2301DDS	R_DS(on) = 0.09 Ω @ V_GS = 2.5 V; 3.3 A I_D; same PowerFLAT™ 2x2 footprint	Lower current rating and higher R_DS(on) limit efficiency in 5–8 A applications	Acceptable for cost-sensitive 3 A designs where thermal margin permits.

Compared with STL8P2UH7, BSS84 lacks power handling capability entirely, while SI2301DDS trades 2.5× higher conduction loss and 2.4× lower current capacity-making STL8P2UH7 the sole choice for 8 A, low-R_DS(on), logic-level P-channel switching in space-constrained industrial and portable systems.

Availability

STL8P2UH7 is available at Aetrix Electronics and suitable for USB-C power delivery modules, wearable load management, and industrial sensor node supply sequencing requiring stable component supply and long-term production support.

Supply support for STL8P2UH7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing silicon solutions for automotive, industrial, and consumer markets since 1987.

The STL8P2UH7 belongs to ST's STripFET™ VII DeepGATE™ Power MOSFET product line, engineered specifically for high-efficiency, low-voltage P-channel switching in battery-powered and space-constrained applications.

FAQ

Is STL8P2UH7 suitable for high-side switching in 12 V automotive body electronics?

No-STL8P2UH7 is rated for 20 V V_DS and is not qualified for automotive applications. Its absolute maximum V_DS provides only 2 V margin above nominal 12 V systems, and it lacks AEC-Q101 qualification, temperature range extension beyond 150 °C junction, or load-dump surge immunity required for automotive use.

What is the recommended PCB layout for thermal performance?

Maximize the exposed drain pad copper area on the top layer and connect it to an internal ground plane using ≥6 thermal vias (0.3 mm diameter, 0.6 mm pitch). Maintain ≥1.5 mm clearance from adjacent traces, and avoid placing components directly above the PowerFLAT™ 2x2 footprint to ensure unobstructed heat dissipation into the PCB.

Does STL8P2UH7 require a gate resistor for ESD or switching stability?

A 10 Ω series gate resistor is recommended to dampen ringing caused by gate-drain capacitance (Crss = 188 pF) and PCB inductance, especially when driven by fast GPIOs. This resistor also limits peak gate current during turn-on and improves ESD robustness without compromising switching speed (td(on) remains <13 ns).

Can the body diode be used for reverse-polarity protection?

No-the intrinsic body diode conducts from source to drain, which would short the input to ground in reverse-polarity conditions. For reverse-voltage protection, STL8P2UH7 must be placed in series with the positive rail (source to input, drain to load), and a separate Schottky or ideal diode controller is required upstream.

STL8P2UH7 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: DeepGATE™, STripFET™ VII

Package/Case:: 6-PowerWDFN

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 8A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 1.5V, 4.5V

Rds On (Max) @ Id, Vgs:: 22.5mOhm @ 4A, 4.5V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 22 nC @ 4.5 V

Vgs (Max):: ±8V

Input Capacitance (Ciss) (Max) @ Vds:: 2390 pF @ 16 V

FET Feature:: -

Power Dissipation (Max):: 2.4W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerFlat™ (2x2)

STL8P2UH7 FAQ

1.How can I place an order for STL8P2UH7 through Aetrix?

Please submit a Request for Quotation (RFQ) for STL8P2UH7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STL8P2UH7 reliable?

The price and inventory of STL8P2UH7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STL8P2UH7 is usually 5 days.

3.What payment methods are accepted for STL8P2UH7?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STL8P2UH7 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STL8P2UH7?

STL8P2UH7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STL8P2UH7 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STL8P2UH7?

For technical support, including STL8P2UH7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STL8P2UH7 requirements.

6.How does Aetrix verify that STL8P2UH7 is sourced from the original manufacturer or authorized distributors?

All STL8P2UH7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STL8P2UH7 meets industry standards.

7.What is the process for return or replacement of STL8P2UH7?

All STL8P2UH7 units undergo pre-shipment inspection (PSI). If there is an issue with STL8P2UH7, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STL8P2UH7 part is unused and in its original packaging.

Return procedure for STL8P2UH7:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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