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STMicroelectronics STLD200N4F6AG

Name: STLD200N4F6AG
Brand: STMicroelectronics
SKU: STLD200N4F6AG
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STLD200N4F6AG

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: 8-PowerWDFN

Datasheet:: STLD200N4F6AG.pdf

Description:: MOSFET N-CH 40V 120A POWERFLAT

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Product details

Overview

STLD200N4F6AG from STMicroelectronics is an automotive-grade N-channel Power MOSFET using STripFET™ F6 trench technology, rated for 40 V V_DS, 1.27 mΩ typ. R_DS(on) at V_GS = 10 V, and 120 A continuous drain current at T_C = 25 °C. It features dual-side cooling in PowerFLAT™ 5x6 package and is designed for high-efficiency switching in engine control units and battery disconnect circuits.

For engineers reviewing the STLD200N4F6AG datasheet, STLD200N4F6AG pinout, STLD200N4F6AG application, or STLD200N4F6AG equivalent, key selection criteria include its 0.95 °C/W bottom-side thermal resistance, 172 nC total gate charge, 400 mJ single-pulse avalanche energy, and validated operation across –55 to 175 °C junction temperature range.

Technical Context

This MOSFET employs a trench-gate STripFET™ F6 structure optimized for low conduction and switching losses. Its dual-side cooling PowerFLAT™ 5x6 package enables thermal management via both top and bottom copper interfaces, with R_thj-c = 2.8 °C/W (top) and 0.95 °C/W (bottom).

The device delivers 90 A repetitive avalanche current and supports fast switching with t_d(on) = 150 ns, t_r = 440 ns, t_d(off) = 600 ns, and t_f = 410 ns under standard test conditions (V_DD = 20 V, I_D = 90 A, R_G = 30 Ω), while maintaining robust body diode performance (t_rr = 40 ns, Q_rr = 53 nC).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum blocking voltage for 12 V/24 V automotive systems
R_DS(on) typ.	1.27 mΩ at V_GS = 10 V, I_D = 75 A - Enables <1.2 W conduction loss at 120 A
I_D cont.	120 A at T_C = 25 °C - Sustains high-current load switching without derating
Q_g	172 nC - Reduces gate drive power loss and enables efficient PWM at >20 kHz
E_AS	400 mJ - Supports unclamped inductive switching in motor and solenoid drivers
R_thj-c bottom	0.95 °C/W - Allows direct thermal coupling to heatsink or PCB ground plane
t_rr	40 ns - Minimizes reverse recovery loss in synchronous rectification

Pinout & Package

STLD200N4F6AG uses the PowerFLAT™ 5x6 dual-side cooling package (8-pin, exposed drain pad). The package integrates top- and bottom-side thermal paths and requires symmetric PCB copper layout per Figure 20 in the datasheet.

Pin/Terminal	Circuit Role	Design Meaning
S(1,2,3)	Source	Three parallel source terminals reduce parasitic inductance and improve current sharing
D(5,6,7,8)	Drain	Four-terminal drain connection tied to large internal copper pad for dual-side heat extraction
G(4)	Gate	Single gate input with low input capacitance (C_iss = 10700 pF) for stable high-speed drive

Key Features

Feature	Design Value
STripFET™ F6 trench process	Enables 1.27 mΩ R_DS(on) in compact 5x6 mm footprint for space-constrained ECUs
Dual-side cooling	0.95 °C/W bottom-side thermal resistance allows >150 W dissipation with minimal heatsink
High avalanche ruggedness	90 A repetitive I_AV and 400 mJ E_AS support fault-tolerant motor control designs
Low Q_gd/Q_gs ratio	48 nC/56 nC = 0.86 - Improves hard-switching immunity and reduces Miller-induced turn-on risk

Applications

Engine Control Unit (ECU) High-Side Switch

Battery Disconnect Switch

Use Scenario: Controlling fuel injector or ignition coil power in gasoline/diesel engines under ASIL-B conditions.

IC Role / Device Role / Timing Role: High-side load switch with fast turn-off (t_f = 410 ns) to prevent misfire during transient load changes.

Use Value: 1.27 mΩ R_DS(on) limits voltage drop to <150 mV at 120 A, preserving actuator timing accuracy.

Use Scenario: Isolating 12 V starter battery from vehicle electronics during cranking or fault events.

IC Role / Device Role / Timing Role: Bidirectional current-handling switch supporting ISO 16750-2 load dump and jump-start surge protection.

Use Value: 400 mJ E_AS withstands repeated 16 V inductive spikes without degradation.

Electric Power Steering (EPS) Motor Driver

48 V Mild Hybrid DC-DC Converter

Use Scenario: Half-bridge high-side switch in EPS motor phase-legs operating up to 10 kHz PWM.

IC Role / Device Role / Timing Role: Low-Q_g (172 nC) MOSFET enabling efficient gate drive with minimal Miller effect at 100 A peak currents.

Use Value: 40 ns t_rr and 53 nC Q_rr suppress shoot-through risk during synchronous rectification.

Use Scenario: Primary-side switch in bidirectional buck-boost converter linking 12 V and 48 V domains in mild hybrid architectures.

IC Role / Device Role / Timing Role: 40 V-rated switch handling 120 A continuous current with dual-side thermal path for sustained 5 kW operation.

Use Value: 0.95 °C/W R_thj-c bottom enables >95% efficiency at full load without forced air cooling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Infineon BSC014N04LS6	R_DS(on) = 1.4 mΩ @ 10 V, Q_g = 165 nC, same 40 V rating, PowerSO-10 package	No dual-side cooling; relies on single-side PCB conduction (R_thj-pcb = 45 °C/W vs STLD200N4F6AG's 31.3 °C/W)	Prefer when board-level thermal design favors top-side heatsinking over bottom-side mounting.
ON Semiconductor NTMFS5C428NT1G	R_DS(on) = 1.35 mΩ @ 10 V, Q_g = 180 nC, SO-8FL package, 175 °C T_J	Higher Q_g increases gate drive loss; no specified avalanche energy rating	Select when cost sensitivity outweighs need for guaranteed avalanche robustness in safety-critical functions.

Compared with BSC014N04LS6 and NTMFS5C428NT1G, STLD200N4F6AG offers superior thermal performance via dual-side cooling and verified 400 mJ avalanche capability-critical for ASIL-B/B+ automotive subsystems where fault transients must be contained without system shutdown.

Availability

STLD200N4F6AG is available at Aetrix Electronics and suitable for engine control units, battery disconnect switches, electric power steering motor drivers, and 48 V mild hybrid DC-DC converters requiring stable component supply across automotive production lifecycles.

Supply support for STLD200N4F6AG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, delivering automotive, industrial, and power discrete solutions with emphasis on functional safety and environmental compliance.

STLD200N4F6AG belongs to the STripFET™ F6 automotive power MOSFET product line, engineered specifically for high-current, high-reliability switching in ASIL-B–compliant vehicle subsystems including powertrain and chassis control.

FAQ

What is the maximum allowable junction temperature for continuous operation?

The STLD200N4F6AG has an operating junction temperature range of –55 to 175 °C. Continuous operation at 175 °C is permitted per absolute maximum ratings, provided thermal design maintains T_J ≤ 175 °C under worst-case ambient and power dissipation conditions, as validated by its 0.95 °C/W bottom-side thermal resistance.

Does this MOSFET require a negative gate drive for reliable turn-off?

No. STLD200N4F6AG specifies ±20 V gate-source voltage rating but operates reliably with 0 V gate drive for turn-off. Its V_GS(th) range of 2–4 V ensures clean turn-off at 0 V, and no negative bias is required-confirmed by datasheet test conditions using 0 V gate drive in switching waveforms and safe operating area characterization.

Can STLD200N4F6AG be used in synchronous rectification topologies?

Yes. Its body diode exhibits t_rr = 40 ns and Q_rr = 53 nC at I_SD = 90 A, enabling use in synchronous rectifier stages of DC-DC converters. The low R_DS(on) further reduces conduction loss compared to external Schottky diodes, especially at high current densities typical in 48 V automotive converters.

Is the PowerFLAT™ 5x6 dual side cooling package RoHS and REACH compliant?

Yes. ST confirms ECOPACK® compliance for STLD200N4F6AG, meeting RoHS Directive 2011/65/EU and REACH Regulation (EC) No. 1907/2006. The device carries the "ECOPACK2" grade designation, indicating halogen-free construction and lead-free terminal finish, as documented in ST's official ECOPACK® database and packaging specification sheets.

STLD200N4F6AG Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: STripFET™ F6

Package/Case:: 8-PowerWDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 120A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6.5V, 10V

Rds On (Max) @ Id, Vgs:: 1.5mOhm @ 75A, 10V

Vgs(th) (Max) @ Id:: 4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 172 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 10700 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 158W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: PowerFlat™ (5x6) Dual Side

STLD200N4F6AG FAQ

1.How can I place an order for STLD200N4F6AG through Aetrix?

Please submit a Request for Quotation (RFQ) for STLD200N4F6AG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STLD200N4F6AG reliable?

The price and inventory of STLD200N4F6AG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STLD200N4F6AG is usually 5 days.

3.What payment methods are accepted for STLD200N4F6AG?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STLD200N4F6AG transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STLD200N4F6AG?

STLD200N4F6AG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STLD200N4F6AG order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STLD200N4F6AG?

For technical support, including STLD200N4F6AG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STLD200N4F6AG requirements.

6.How does Aetrix verify that STLD200N4F6AG is sourced from the original manufacturer or authorized distributors?

All STLD200N4F6AG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STLD200N4F6AG meets industry standards.

7.What is the process for return or replacement of STLD200N4F6AG?

All STLD200N4F6AG units undergo pre-shipment inspection (PSI). If there is an issue with STLD200N4F6AG, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STLD200N4F6AG part is unused and in its original packaging.

Return procedure for STLD200N4F6AG:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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