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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STN1NF10

Name: STN1NF10
Brand: STMicroelectronics
SKU: STN1NF10
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STN1NF10

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-261-4, TO-261AA

Datasheet:: STN1NF10.pdf

Description:: MOSFET N-CH 100V 1A SOT-223

Quantity:: RFQ Add To RFQ list

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Inventory:6,846

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Product details

Overview

STN1NF10 from STMicroelectronics is an N-channel enhancement-mode Power MOSFET in SOT-223 package, rated for 100 V drain-source voltage, 0.7 Ω typical R_DS(on) at V_GS = 10 V, and 1 A continuous drain current at T_C = 25°C. It features rugged avalanche capability (35 mJ single-pulse), high dv/dt immunity (20 V/ns), and is optimized for low-power switching in DC-DC converters and load-switching circuits.

For engineers reviewing the STN1NF10 datasheet, STN1NF10 pinout, STN1NF10 application, or STN1NF10 equivalent, key selection criteria include its 100 V blocking rating, 0.7 Ω on-resistance at 10 V gate drive, thermal resistance to PCB (50 °C/W on 1 inch² copper), unclamped inductive switching robustness, and SOT-223 footprint compatibility with manual or automated assembly.

Technical Context

This device employs ST's STripFET™ II process with strip-based cell architecture, enabling high die packing density and low specific on-resistance. Its gate threshold voltage (2–4 V) supports TTL/CMOS-compatible drive, and its 1 S typical transconductance ensures stable gain under switching conditions.

The integrated body diode exhibits 1.2 V forward voltage at 1 A and 45 ns reverse recovery time under specified inductive test conditions (di/dt = 100 A/µs, T_j = 150°C), making it suitable for freewheeling paths where controlled recovery is required.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	100 V - Maximum drain-source blocking voltage before avalanche onset
R_DS(on)	0.7 Ω (typ) at V_GS = 10 V, I_D = 0.5 A - Determines conduction loss in low-current switching applications
I_D (cont)	1 A at T_C = 25°C - Continuous safe operating current with adequate heatsinking
E_AS	35 mJ - Single-pulse avalanche energy rating confirms ruggedness under inductive turn-off stress
dv/dt	20 V/ns - High immunity to false triggering during fast voltage transients
Q_g	4–6 nC - Total gate charge defining driver strength requirement for 100 kHz-class switching
R_thj-pcb	50 °C/W - Thermal resistance to 1 inch² copper PCB, critical for passive cooling design

Pinout & Package

SOT-223 package: surface-mount, 4-terminal (3 leads + tab), thermally enhanced with exposed drain pad connected to lead 2 (Drain). Tab is electrically connected to Drain (pin 2).

Pin/Terminal	Circuit Role	Design Meaning
1 (Source)	Source terminal	Reference node for gate drive; connects to low-side return path
2 (Drain)	Drain terminal / Exposed tab	Main power output; tab provides primary thermal path to PCB copper
3 (Gate)	Control input	High-impedance MOS gate requiring <6 nC charge for full enhancement
4 (Source)	Second source connection	Redundant source bond wire improving current sharing and reducing source inductance

Key Features

Feature	Design Value
STripFET™ II process	Enables 0.7 Ω R_DS(on) in SOT-223 - delivers higher current density than planar MOSFETs of same footprint
Rugged avalanche capability	35 mJ single-pulse E_AS - eliminates need for external snubbers in relay-drive or solenoid-switching
High dv/dt immunity	20 V/ns - prevents spurious turn-on in noisy industrial environments with fast-switching loads
ECOPACK® compliance	Lead-free second-level interconnect - meets RoHS and JEDEC JESD97 marking requirements

Applications

Power Supply Load Switch

Low-Voltage DC-DC Converter

Use Scenario: Enables/disables 12 V rail to peripheral modules in embedded systems with soft-start control.

IC Role / Device Role / Timing Role: Low-side switch controlling power delivery path; gate driven by microcontroller GPIO.

Use Value: 0.7 Ω R_DS(on) limits dropout to <700 mV at 1 A, minimizing heat without heatsink on standard FR4.

Use Scenario: Synchronous rectifier or high-side switch in 5–24 V input buck converter for IoT sensor nodes.

IC Role / Device Role / Timing Role: Power switch operating at ≤500 kHz; leverages fast 45 ns diode recovery for reduced switching loss.

Use Value: 35 mJ E_AS withstands inductive kickback during startup/fault, improving reliability over standard MOSFETs.

Automotive Body Control

Industrial Relay Replacement

Use Scenario: Replaces electromechanical relays in door lock or mirror control modules.

IC Role / Device Role / Timing Role: Low-side driver interfacing with LIN bus controller; handles inductive coil loads.

Use Value: 100 V V_DSS accommodates automotive load-dump transients up to 87 V, meeting ISO 7637-2 Pulse 5a.

Use Scenario: Solid-state replacement for 1 A-rated signal relays in PLC I/O modules.

IC Role / Device Role / Timing Role: Fast-turning load switch with integrated diode for back-EMF clamping.

Use Value: 20 V/ns dv/dt rating prevents false triggering from nearby motor commutation noise.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel low-power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
ON Semiconductor NSS1C200MZ4T1G	R_DS(on) = 0.85 Ω (min), V_DSS = 100 V, SOT-223 - higher on-resistance, lower Q_g (3.5 nC)	Lower gate drive demand but higher conduction loss at 1 A	Prefer when gate drive voltage is limited to 5 V or driver output current is constrained
Vishay SI2301DS-T1-BE3	R_DS(on) = 0.135 Ω (max) at V_GS = 4.5 V, V_DSS = 20 V, SOT-23 - lower voltage rating, smaller package	Not suitable for 100 V applications; requires redesign for voltage derating	Only viable in sub-24 V systems where footprint reduction outweighs voltage margin loss

Compared with NSS1C200MZ4T1G and SI2301DS-T1-BE3, STN1NF10 uniquely balances 100 V capability, 0.7 Ω on-resistance, and SOT-223 thermal performance-making it optimal for space-constrained 12–48 V industrial switching where avalanche ruggedness matters.

Availability

STN1NF10 is available at Aetrix Electronics and suitable for power supply load switching, low-voltage DC-DC conversion, and automotive body control applications requiring stable component supply across extended production lifecycles.

Supply support for STN1NF10 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, designing and manufacturing analog, digital, and mixed-signal ICs and discrete devices for industrial, automotive, and consumer markets.

STN1NF10 belongs to ST's STripFET™ II Power MOSFET product line, engineered specifically for cost-sensitive, thermally constrained low-to-medium power switching applications demanding high reliability and avalanche tolerance.

FAQ

What is the maximum safe operating temperature for STN1NF10 junction?

The STN1NF10 has a specified operating junction temperature range of –55°C to +150°C. Its absolute maximum T_J is 150°C; sustained operation above this risks permanent parametric shift or failure. Derating begins at T_C = 25°C with a 0.02 W/°C reduction in total dissipation, requiring thermal design that maintains T_J ≤ 150°C under worst-case ambient and power conditions.

Can STN1NF10 be used in linear (analog) mode operation?

STN1NF10 is not characterized or guaranteed for linear-mode operation. Its Safe Operating Area (SOA) curve (Figure 1) shows limited DC capability beyond 100 ms pulses, and no SOA data is provided for extended linear bias. For analog applications like current regulation or amplification, ST recommends dedicated linear MOSFETs with fully specified SOA and thermal stability.

Is the SOT-223 package lead-free and RoHS compliant?

Yes. STN1NF10 is supplied in an ECOPACK®-compliant SOT-223 package with lead-free second-level interconnect, conforming to RoHS Directive 2011/65/EU and JEDEC Standard JESD97. The inner box label and package marking indicate the lead-free status, and soldering profiles must follow ST's recommended reflow guidelines for Pb-free processes.

Does STN1NF10 require a gate resistor for basic switching?

A gate resistor is recommended to control switching speed and suppress ringing. With Q_g = 4–6 nC and typical driver output impedance, a 4.7 Ω resistor (as used in ST's test circuit Figure 13) achieves balanced turn-on/turn-off times (~5 ns rise, ~6.5 ns fall). Omitting it may cause overshoot, EMI, or shoot-through in half-bridge configurations.

STN1NF10 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: STripFET™ II

Package/Case:: TO-261-4, TO-261AA

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 1A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 800mOhm @ 500mA, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 6 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 105 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-223

STN1NF10 FAQ

1.How can I place an order for STN1NF10 through Aetrix?

Please submit a Request for Quotation (RFQ) for STN1NF10 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STN1NF10 reliable?

The price and inventory of STN1NF10 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STN1NF10 is usually 5 days.

3.What payment methods are accepted for STN1NF10?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STN1NF10 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STN1NF10?

STN1NF10 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STN1NF10 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STN1NF10?

For technical support, including STN1NF10 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STN1NF10 requirements.

6.How does Aetrix verify that STN1NF10 is sourced from the original manufacturer or authorized distributors?

All STN1NF10 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STN1NF10 meets industry standards.

7.What is the process for return or replacement of STN1NF10?

All STN1NF10 units undergo pre-shipment inspection (PSI). If there is an issue with STN1NF10, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STN1NF10 part is unused and in its original packaging.

Return procedure for STN1NF10:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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