STMicroelectronics STN1NK80Z

Overview

STQ1NK80ZR-AP from STMicroelectronics is a Zener-protected N-channel SuperMESH Power MOSFET in TO-92 package, rated for 800 V drain-source voltage, 13 Ω typical R_DS(on), and 0.3 A continuous drain current at 25 °C. It delivers high dv/dt capability (4.5 V/ns), 100% avalanche tested performance, and integrated gate ESD protection (1 kV HBM), targeting high-reliability switching in compact AC-DC adapters and auxiliary power supplies.

For engineers reviewing the STQ1NK80ZR-AP datasheet, STQ1NK80ZR-AP pinout, STQ1NK80ZR-AP application, or STQ1NK80ZR-AP equivalent, key selection criteria include verified avalanche energy (50 mJ), gate charge (7.7 nC), reverse recovery characteristics (365 ns trr, 802 nC Qrr), thermal resistance (120 °C/W junction-to-ambient), and Zener-protected gate architecture for robustness in unclamped inductive switching.

Technical Context

This device implements ST's SuperMESH process - an evolution of PowerMESH - to simultaneously reduce on-resistance and enhance dynamic ruggedness. Its 800 V V_DS rating and 4.5 V/ns dv/dt capability enable reliable operation in flyback snubberless topologies and high-voltage auxiliary rails where fast voltage transients occur during MOSFET turn-off.

The integrated Zener diode across gate-source provides clamping against overvoltage events, while the 1 kV HBM ESD rating and 100% unclamped inductive avalanche testing (I_AR = 1 A, E_AS = 50 mJ) confirm hard-switching resilience. The TO-92 package constrains thermal dissipation (P_TOT = 3 W at T_L = 25 °C), making it suitable for low-power, space-constrained applications with conservative derating.

Key Specifications

Pinout & Package

STQ1NK80ZR-AP uses a TO-92 ammopack package with standardized lead configuration: Pin 1 = Gate (G), Pin 2 = Drain (D), Pin 3 = Source (S). The package features axial leads, epoxy body, and is RoHS-compliant per ECOPACK specifications.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Compared with STQ1NK80ZR-AP, STP1NK80ZFP offers superior thermal performance but sacrifices compactness, while FCP13N80N trades gate protection for higher ESD tolerance and current rating - both require layout revision and gate drive revalidation.

Availability

STQ1NK80ZR-AP is available at Aetrix Electronics and suitable for AC-DC auxiliary supplies, flyback snubberless converters, LED driver standby circuits, and industrial sensor bias rails requiring stable component supply and long-term manufacturability.

Supply support for STQ1NK80ZR-AP includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs and discrete devices for automotive, industrial, and power applications.

STQ1NK80ZR-AP belongs to ST's SuperMESH Power MOSFET product line, engineered specifically for high-voltage, low-power switching in space-constrained offline power supplies where ruggedness, simplicity, and cost efficiency are critical.

FAQ

What is the maximum safe operating voltage for STQ1NK80ZR-AP in continuous conduction?

The absolute maximum drain-source voltage (V_DS) is 800 V, but design practice limits continuous operation to ≤640 V DC to maintain margin against transients and ensure long-term reliability. This aligns with the 640 V V_DD condition used in gate charge and avalanche testing per DS15317.

Does STQ1NK80ZR-AP require an external gate resistor for stability?

No external gate resistor is required for basic stability due to its 4.5 V/ns dv/dt immunity and low Q_g (7.7 nC), but a 10–47 Ω series resistor is recommended to dampen ringing in high-frequency layouts and limit peak gate current during fast switching transitions.

Can STQ1NK80ZR-AP replace STP1NK80Z in existing TO-220 designs?

No - STQ1NK80ZR-AP uses TO-92 packaging with different pinout (G-D-S vs G-D-S but physically incompatible lead spacing and thermal mass), and its 3 W power rating is significantly lower than STP1NK80Z's 25 W. Direct replacement would cause thermal failure and mechanical fit issues.

Is the body diode suitable for freewheeling in continuous conduction mode?

The intrinsic body diode has V_SD = 1.6 V at 1 A and t_rr = 365 ns, making it usable only in low-current, low-frequency freewheeling (e.g., <100 kHz, <0.1 A). For CCM operation, an external Schottky diode is strongly recommended to avoid reverse recovery losses and thermal stress.