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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STN2NE10

Name: STN2NE10
Brand: STMicroelectronics
SKU: STN2NE10
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STN2NE10

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-261-4, TO-261AA

Datasheet:: STN2NE10.pdf

Description:: MOSFET N-CH 100V 2A SOT-223

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STN2NE10 from STMicroelectronics is an N-channel enhancement-mode power MOSFET in SOT-223 package, rated for 100 V V_DS, 2 A continuous drain current at T_C = 25 °C, and typ. R_DS(on) = 0.33 Ω at V_GS = 10 V. It features avalanche ruggedness, 100% avalanche tested, and exceptional dv/dt capability (6 V/ns), making it suitable for synchronous rectification and DC motor control in compact power stages.

For engineers reviewing the STN2NE10 datasheet, STN2NE10 pinout, STN2NE10 application, or STN2NE10 equivalent, key selection factors include its SOT-223 thermal resistance (R_thj-pcb = 50 °C/W), low gate charge (Q_g = 14 nC), fast switching (t_d(off) = 25 ns), and robust source-drain diode (V_SD = 1.5 V @ 2 A).

Technical Context

This MOSFET employs ST's "Single Feature Size" strip-based STripFET™ process, enabling high cell density and reproducible low R_DS(on). Its design emphasizes ruggedness over speed: avalanche energy rating E_AS = 20 mJ, I_AR = 2 A, and dv/dt immunity up to 6 V/ns under specified di/dt conditions.

It operates with gate threshold voltage V_GS(th) = 2–4 V and exhibits strong transconductance (g_fs = 1–1.8 S), supporting stable turn-on in 10 V gate drive systems. The device is characterized for T_j up to 150 °C and storage down to –65 °C, with full thermal derating defined (0.02 W/°C above 25 °C).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - Maximum blocking voltage before breakdown; defines use in ≤100 V DC bus applications
R_DS(on)	0.33 Ω (typ.) @ V_GS = 10 V, I_D = 1 A - Directly determines conduction loss (P_cond ≈ I² × 0.33) in continuous operation
I_D (cont)	2 A @ T_C = 25 °C - Continuous current rating under ideal heatsinking; derates to 1.3 A at 100 °C case temperature
E_AS	20 mJ - Single-pulse avalanche energy at T_j = 25 °C; enables reliable operation under inductive switching stress
Q_g	14 nC - Total gate charge; sets minimum driver strength required for <25 ns t_d(off) with 4.7 Ω gate resistor
dv/dt	6 V/ns - Peak diode recovery voltage slope rating; critical for noise immunity in hard-switched converters
V_SD	1.5 V @ I_SD = 2 A - Forward voltage of integrated body diode; impacts synchronous rectifier conduction loss

Pinout & Package

SOT-223 package: surface-mount, 4-pin (3 leads + tab), with exposed drain pad thermally connected to PCB copper for enhanced heat dissipation. Tab is electrically connected to Drain (Pin 2). Standard JEDEC MO-178 variant.

Pin/Terminal	Circuit Role	Design Meaning
1 (Source)	Source terminal	Reference node for gate drive; carries full load current back to power rail; tied to ground or low-side return path
2 (Drain / Tab)	Drain terminal & thermal pad	Main high-side current path; electrically and thermally coupled to PCB copper area for R_thj-pcb = 50 °C/W
3 (Gate)	Control input	High-impedance MOS gate requiring <14 nC charge for full enhancement; sensitive to ESD (±20 V max rating)
4 (Source)	Second source connection	Redundant source bond wire; improves current sharing and reduces source inductance in high-di/dt switching

Key Features

Feature	Design Value
Avalanche ruggedness	100% production-tested for repetitive and non-repetitive avalanche; supports unclamped inductive switching without failure
dv/dt immunity	Rated 6 V/ns - prevents false turn-on during fast voltage transients in bridge-leg configurations
Thermal performance	R_thj-pcb = 50 °C/W - enables 2.5 W dissipation with only 125 °C junction rise above PCB temperature
Body diode quality	t_rr = 75 ns, Q_rr = 210 µC - low reverse recovery charge minimizes switching loss in synchronous rectifier mode

Applications

DC Motor Control (Disk Drives)

DC-DC Converters (Buck Topology)

Use Scenario: Low-voltage, high-efficiency H-bridge driver for 5–24 V brushed DC spindle motors in optical disk drives.

IC Role / Device Role: Low-side switch controlling motor current direction and PWM speed regulation.

Use Value: 0.33 Ω R_DS(on) limits I²R loss at 2 A peak; SOT-223 footprint allows dense layout near motor connector.

Use Scenario: Synchronous rectifier in 12 V input, 3.3 V/2 A buck converter for embedded microcontroller power rails.

IC Role / Device Role: Active replacement of Schottky diode to reduce conduction loss and improve efficiency >92%.

Use Value: V_SD = 1.5 V and low Q_rr cut reverse recovery loss; 6 V/ns dv/dt rating prevents shoot-through in high-frequency (300 kHz) operation.

Synchronous Rectification

DC-AC Inverters (Low-Power)

Use Scenario: Secondary-side switch in isolated flyback or forward converter delivering ≤2 A at 5–12 V output.

IC Role / Device Role: Controlled rectifier replacing output diode to recover energy during off-cycle.

Use Value: Fast t_r = 17 ns and low Q_gd = 4 nC enable precise timing alignment with primary switch; avalanche rating handles leakage inductance spikes.

Use Scenario: Half-bridge leg in 24 V input, 100 V AC line-frequency inverter for small fans or LED drivers.

IC Role / Device Role: High-side switch in low-power inverter stage operating below 100 V bus.

Use Value: 100 V V_DS provides 2× margin over 24 V DC bus; 150 °C T_jmax supports sealed enclosure operation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP2NK10Z	TO-92 package, same V_DS/R_DS(on), but higher R_thj-amb (100 °C/W vs. 60 °C/W)	Limited to ≤0.5 A continuous due to thermal constraints; unsuitable for 2 A sustained loads	Prefer STN2NE10 where PCB heatsinking is available and >1 A current is required
IRLML2502	Logic-level gate (V_GS(th) = 1–2.4 V), lower R_DS(on) (0.08 Ω), but only 20 V V_DS	Cannot replace in 100 V applications; only viable in ≤20 V systems like USB PD or battery protection	Select IRLML2502 only when gate drive is 3.3 V/5 V and bus voltage is <24 V

Compared with STP2NK10Z and IRLML2502, STN2NE10 uniquely balances 100 V rating, 2 A capability, SOT-223 thermal performance, and avalanche ruggedness-making it irreplaceable in mid-voltage, medium-current industrial power stages where reliability under transient stress is mandatory.

Availability

STN2NE10 is available at Aetrix Electronics and suitable for DC motor control, synchronous rectification, DC-DC converters, and low-power DC-AC inverters requiring stable component supply and long-term industrial availability.

Supply support for STN2NE10 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, designing and manufacturing analog, power, MCU, and sensor solutions for industrial, automotive, and consumer markets.

The STripFET™ power MOSFET product line targets cost-sensitive, space-constrained power conversion applications demanding high ruggedness, low R_DS(on), and proven avalanche performance in standard packages.

FAQ

Is STN2NE10 suitable for 3.3 V logic-level gate drive?

No. STN2NE10 has V_GS(th) = 2–4 V and requires ≥10 V gate drive for guaranteed R_DS(on) ≤ 0.4 Ω. At 3.3 V, it remains weakly enhanced with R_DS(on) > 2 Ω, causing excessive conduction loss and thermal runaway. Use logic-level alternatives like IRLML2502 only if V_DS ≤ 20 V.

What is the maximum safe operating frequency for STN2NE10 in a buck converter?

Based on t_d(off) = 25 ns and t_f = 7 ns, STN2NE10 supports switching frequencies up to ~1 MHz in optimized layouts with low-inductance gate loops. However, thermal limits (P_tot = 2.5 W) constrain practical use to ≤500 kHz at 2 A, depending on PCB copper area and ambient temperature.

Does STN2NE10 have a built-in ESD protection diode on the gate?

No. The datasheet specifies |V_GS| ≤ ±20 V absolute maximum, with no mention of integrated gate protection. External Zener clamping (e.g., 12 V TVS) is recommended in systems exposed to handling or board-level ESD events to prevent gate oxide rupture.

Can STN2NE10 be used in parallel with identical units for higher current?

Yes, but with strict layout symmetry: matched gate resistors, Kelvin source connections, and shared thermal plane. Its positive temperature coefficient of R_DS(on) promotes current sharing, yet mismatched parasitic inductance can cause dynamic imbalance. Derate total current by 20% versus sum of individual ratings.

STN2NE10 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: STripFET™

Package/Case:: TO-261-4, TO-261AA

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 2A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 400mOhm @ 1A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 19 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 305 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-223

STN2NE10 FAQ

1.How can I place an order for STN2NE10 through Aetrix?

Please submit a Request for Quotation (RFQ) for STN2NE10 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STN2NE10 reliable?

The price and inventory of STN2NE10 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STN2NE10 is usually 5 days.

3.What payment methods are accepted for STN2NE10?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STN2NE10 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STN2NE10?

STN2NE10 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STN2NE10 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STN2NE10?

For technical support, including STN2NE10 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STN2NE10 requirements.

6.How does Aetrix verify that STN2NE10 is sourced from the original manufacturer or authorized distributors?

All STN2NE10 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STN2NE10 meets industry standards.

7.What is the process for return or replacement of STN2NE10?

All STN2NE10 units undergo pre-shipment inspection (PSI). If there is an issue with STN2NE10, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STN2NE10 part is unused and in its original packaging.

Return procedure for STN2NE10:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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