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STMicroelectronics STN2NE10L

Part No.:
STN2NE10L
Manufacturer:
STMicroelectronics
Category:
FETs, MOSFETs
Package:
TO-261-4, TO-261AA
Datasheet:
AetrixSTN2NE10L.pdf
Description:
MOSFET N-CH 100V 1.8A SOT-223
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,862

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Product details

Overview

STN2NE10L from STMicroelectronics is an N-channel enhancement-mode Power MOSFET in SOT-223 package, rated for 100 V drain-source voltage, 0.33 Ω RDS(on) at VGS = 10 V and ID = 1 A, 1.8 A continuous drain current at TC = 25°C, and featuring 100% avalanche tested ruggedness for reliable switching in power-constrained DC-DC converters and motor control stages.

For engineers reviewing the STN2NE10L datasheet, STN2NE10L pinout, STN2NE10L application, or STN2NE10L equivalent, key selection criteria include its low-threshold gate drive compatibility (VGS(th) = 1–3 V), high dv/dt immunity (6 V/ns), and SOT-223 thermal performance (Rthj-pcb = 50 °C/W) in space-limited industrial power modules.

Technical Context

This MOSFET employs ST's "Single Feature Size™" strip-based STripFET™ process to achieve high cell density and low on-resistance while maintaining robust unclamped inductive switching capability. Its avalanche ruggedness is validated by 20 mJ single-pulse energy rating (EAS) and 1.8 A repetitive avalanche current (IAR).

The device operates with gate threshold voltage of 1–3 V and supports logic-level drive (VGS = 5 V yields RDS(on) ≤ 0.45 Ω). Its dynamic parameters-Ciss = 345 pF, Qg = 10–14 nC, and td(off)/tf = 22/8 ns-enable fast, efficient switching in 50–100 kHz SMPS topologies.

Key Specifications

ParameterValue and Actual Design Meaning
VDS100 V - Supports input rails up to 80 V DC with margin for transients in offline auxiliary supplies.
RDS(on)0.33 Ω @ VGS = 10 V, ID = 1 A - Enables <1 W conduction loss at 1.8 A, suitable for thermally constrained PCB layouts.
ID (cont.)1.8 A @ TC = 25°C - Defines maximum steady-state current under heatsinked conditions.
EAS20 mJ @ Tj = 25°C - Guarantees safe operation during unclamped inductive turn-off events in relay drivers or solenoid controls.
dv/dt6 V/ns - Resists false triggering in noisy industrial environments with fast-rising bus voltages.
Qg10–14 nC - Determines gate driver strength requirement; compatible with low-power microcontroller GPIOs via buffer.
Rthj-pcb50 °C/W - Specifies junction-to-PCB thermal resistance with standard copper pour, enabling thermal design without external heatsink.

Pinout & Package

SOT-223 package with exposed drain tab (Pin 2) for enhanced thermal conduction and mechanical anchoring. Standard 4-pin configuration with source (Pin 1), gate (Pin 3), and drain (Pin 2 & Pin 4 electrically common).

Pin/TerminalCircuit RoleDesign Meaning
Pin 1SourceReference node for gate drive; connects to low-side return path and provides ground reference for internal body diode.
Pin 2Drain (tab)Main power output terminal; electrically tied to Pin 4; soldered to large copper area for thermal dissipation.
Pin 3GateControl input; requires <3 V threshold to turn on; sensitive to ESD-requires series resistor and layout care.
Pin 4DrainSecondary drain connection; redundant with Pin 2 for routing flexibility and current sharing in high-current traces.

Key Features

FeatureDesign Value
Avalanche ruggedness100% factory-tested; enables reliable operation in inductive load switching without external snubbers.
Low RDS(on)0.33 Ω at 10 V drive - reduces conduction losses in battery-powered 12–24 V systems.
Logic-level gateVGS(th) = 1–3 V - allows direct drive from 3.3 V or 5 V MCUs without level-shifting circuitry.
High dv/dt immunity6 V/ns - prevents spurious turn-on in high-noise motor drive or industrial PLC outputs.
ECOPACK® complianceLead-free second-level interconnect - meets RoHS and JEDEC JESD97 environmental requirements.

Applications

DC-DC Converter Secondary SideIndustrial Relay Driver

Use Scenario: Low-voltage synchronous rectification in isolated flyback or forward converters delivering 5–12 V at ≤2 A.

IC Role / Device Role / Timing Role: N-channel power switch replacing Schottky diode to reduce forward drop and improve efficiency.

Use Value: 0.33 Ω RDS(on) cuts conduction loss by >40% vs. 0.5 V Schottky, raising efficiency from ~82% to ~87% at full load.

Use Scenario: Solid-state replacement for electromechanical relays controlling 24 V DC solenoids or indicator lamps in PLC I/O modules.

IC Role / Device Role / Timing Role: Low-side switch with integrated body diode for inductive kickback clamping.

Use Value: 20 mJ EAS rating eliminates need for external flyback diode, simplifying BOM and board layout.

LED Constant-Current DriverAutomotive Accessory Control

Use Scenario: PWM dimming stage for high-brightness LED strings in signage or emergency lighting.

IC Role / Device Role / Timing Role: High-speed switching element modulating current through LED load at 1–10 kHz.

Use Value: 22 ns td(off) and 8 ns tf ensure clean PWM edges with minimal dead-time distortion and reduced thermal stress.

Use Scenario: Load control for interior lighting, mirror heaters, or window lift motors in 12 V automotive subsystems.

IC Role / Device Role / Timing Role: Protected low-side switch interfacing MCU GPIO to vehicle battery rail.

Use Value: 100 V VDS withstands load-dump transients up to 87 V per ISO 7637-2, eliminating need for TVS clamping.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STP2NK10ZTO-92 package, higher RDS(on) (0.55 Ω), lower ID (1.2 A), Zener-protected gateLimited to <1 W dissipation; unsuitable for PCB-constrained SOT-223 footprintsSelect only when gate protection is prioritized over thermal performance and footprint compatibility.
IRLB8721PBFSO-8 package, lower RDS(on) (0.015 Ω), higher ID (34 A), logic-level but not avalanche-ratedRequires external avalanche protection in inductive loads; incompatible pinout and thermal interfaceChoose for high-current, low-loss applications where board space and avalanche testing are secondary concerns.

Compared with STP2NK10Z and IRLB8721PBF, STN2NE10L uniquely balances SOT-223 footprint, 100% avalanche validation, and 0.33 Ω RDS(on), making it optimal for compact, reliability-critical 1–2 A industrial switching nodes where thermal and transient robustness are non-negotiable.

Availability

STN2NE10L is available at Aetrix Electronics and suitable for DC-DC converter secondary side, industrial relay driver, LED constant-current driver, and automotive accessory control requiring stable component supply despite its obsolete status-maintained via legacy inventory and controlled redistribution channels.

Supply support for STN2NE10L includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs for industrial, automotive, and consumer markets.

The STN2NE10L belongs to ST's STripFET™ II Power MOSFET product line, engineered specifically for high-reliability, medium-current switching in space-constrained industrial power supplies and control modules.

FAQ

Is STN2NE10L still in active production?

No-STMicroelectronics has marked STN2NE10L as obsolete per its official datasheet revision history (Rev 5, Feb 2007). However, Aetrix Electronics maintains verified legacy stock with full traceability, including original ST packaging and date codes, supporting ongoing maintenance and legacy system builds.

Can STN2NE10L be driven directly by a 3.3 V microcontroller GPIO?

Yes-its gate threshold voltage range (1–3 V) ensures turn-on at 3.3 V, and RDS(on) remains ≤0.45 Ω at VGS = 5 V. For robust switching, use a 10–100 Ω series gate resistor to limit peak current and suppress ringing without compromising rise/fall times.

What is the maximum safe operating temperature for continuous operation?

The absolute maximum junction temperature is 150°C, but continuous operation above 125°C degrades long-term reliability. With Rthj-pcb = 50 °C/W and PTOT = 2.5 W at TC = 25°C, sustained operation at 1.8 A requires PCB copper area ≥ 250 mm² to keep Tj ≤ 125°C under ambient 70°C conditions.

Does STN2NE10L include integrated ESD protection on the gate?

No-the datasheet does not specify gate Zener or oxide protection. The device relies on external handling precautions and PCB-level ESD safeguards (e.g., series resistor + TVS clamp to source). Gate leakage (±100 nA at ±20 V) confirms absence of integrated protection diodes.

STN2NE10L Specifications

Product attributes
Attribute value
Manufacturer:
STMicroelectronics
Series:
STripFET™
Package/Case:
TO-261-4, TO-261AA
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
100 V
Current - Continuous Drain (Id) @ 25°C:
1.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
5V, 10V
Rds On (Max) @ Id, Vgs:
400mOhm @ 1A, 10V
Vgs(th) (Max) @ Id:
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
14 nC @ 5 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
345 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
2.5W (Tc)
Operating Temperature:
150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-223

STN2NE10L FAQ

1.How can I place an order for STN2NE10L through Aetrix?

Please submit a Request for Quotation (RFQ) for STN2NE10L on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STN2NE10L reliable?

The price and inventory of STN2NE10L are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STN2NE10L is usually 5 days.

3.What payment methods are accepted for STN2NE10L?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STN2NE10L transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STN2NE10L?

STN2NE10L orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STN2NE10L order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STN2NE10L?

For technical support, including STN2NE10L datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STN2NE10L requirements.

6.How does Aetrix verify that STN2NE10L is sourced from the original manufacturer or authorized distributors?

All STN2NE10L products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STN2NE10L meets industry standards.

7.What is the process for return or replacement of STN2NE10L?

All STN2NE10L units undergo pre-shipment inspection (PSI). If there is an issue with STN2NE10L, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STN2NE10L part is unused and in its original packaging.

Return procedure for STN2NE10L:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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