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STMicroelectronics STN3P10F6

Part No.:
STN3P10F6
Manufacturer:
STMicroelectronics
Category:
FETs, MOSFETs
Package:
TO-261-4, TO-261AA
Datasheet:
AetrixSTN3P10F6.pdf
Description:
SOT 223
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:9,189

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Product details

Overview

STN3P10F6 from STMicroelectronics is a P-channel enhancement-mode Power MOSFET using STripFET™ F6 trench-gate technology, rated for -100 V drain-source voltage, 0.136 Ω typical RDS(on) at -10 V VGS, -3 A continuous drain current (Tpcb = 25 °C), and housed in an SOT-223 package. It serves as a high-efficiency low-side switch in DC-DC converters and load switching circuits.

For engineers reviewing the STN3P10F6 datasheet, STN3P10F6 pinout, STN3P10F6 application, or STN3P10F6 equivalent, key selection criteria include its -100 V blocking capability, low gate charge (16.5 nC), avalanche ruggedness, thermal resistance (46 °C/W on FR-4), and SOT-223 footprint compatibility with board-level power management layouts.

Technical Context

This device operates as a normally-off P-channel switch requiring negative gate drive relative to source. Its trench-gate STripFET™ F6 structure enables reduced RDS(on) and gate charge versus prior generations, supporting higher efficiency in medium-voltage switching applications up to 175 °C junction temperature.

The integrated body diode exhibits 1.1 V forward voltage at -3 A and 26.5 ns reverse recovery time under defined inductive switching conditions, enabling use in synchronous rectification and freewheeling paths where fast diode recovery is required.

Key Specifications

ParameterValue and Actual Design Meaning
VDS-100 V - Maximum drain-to-source blocking voltage; defines usable input voltage range in high-side or low-side configurations
RDS(on) typ.0.136 Ω @ VGS = -10 V, ID = -1.5 A - Directly determines conduction loss and thermal rise at rated current
ID cont.-3 A @ Tpcb = 25 °C - Continuous current rating under standard PCB thermal conditions; derates to -2 A at 100 °C
Qg16.5 nC - Total gate charge; governs driver strength requirement and switching energy loss
Rthj-pcb46 °C/W - Junction-to-PCB thermal resistance on 1 in² FR-4, 2 oz Cu; used to calculate junction temperature rise
VGS(th)-2 to -4 V - Gate threshold voltage range; defines minimum negative gate bias needed to initiate conduction
Ciss900 pF - Input capacitance at VDS = -25 V; impacts gate drive loop stability and turn-on speed

Pinout & Package

SOT-223 package: surface-mount, 4-pin thermally enhanced plastic case with exposed drain tab (pins 2 and 4 internally connected to drain). Standard JEDEC MO-178AC outline; recommended footprint per Figure 17.

Pin/TerminalCircuit RoleDesign Meaning
G (Pin 1)GateControl terminal; requires negative voltage relative to source to turn on; 16.5 nC total charge must be driven
S (Pin 3)SourceReference node for gate drive and current return path; electrically isolated from PCB ground unless tied externally
D (Pins 2 & 4)DrainMain power output terminal; internally shorted across two pins for lower inductance and improved thermal conduction to PCB copper

Key Features

FeatureDesign Value
Very low RDS(on)0.136 Ω typ. at -10 V VGS - Enables <1 W conduction loss at -3 A, reducing heatsink need in space-constrained designs
Low gate charge16.5 nC total - Allows use of low-power gate drivers and reduces switching loss in high-frequency operation
High avalanche ruggednessRated for single-pulse avalanche energy per SOA curve - Supports robust operation during inductive load transients without external snubbers
ECOPACK® compliantMeets RoHS and halogen-free requirements - Ensures compliance with environmental regulations for industrial and consumer end equipment

Applications

Power Supply Load SwitchDC-DC Converter High-Side Switch

Use Scenario: Controlled power-up sequencing for microcontroller peripherals in battery-powered IoT nodes.

IC Role / Device Role / Timing Role: Low-side P-channel switch enabling ON/OFF control of 12–24 V rails with minimal quiescent current.

Use Value: 0.136 Ω RDS(on) limits voltage drop to <410 mV at 3 A, preserving system efficiency and enabling compact layout without forced air cooling.

Use Scenario: High-side switching in non-synchronous buck converter for automotive body electronics.

IC Role / Device Role / Timing Role: P-channel MOSFET operating as main power switch; driven by charge-pump gate driver.

Use Value: -100 V VDS rating supports 42 V automotive transients; 46 °C/W thermal resistance allows stable operation at 150 °C ambient with standard PCB copper area.

Industrial Motor ControlLED Driver Current Sink

Use Scenario: Brake/enable switch in 24 V brushed DC motor control modules.

IC Role / Device Role / Timing Role: Freewheeling path switch activated during PWM off-time to manage back-EMF.

Use Value: Integrated body diode with 26.5 ns trr and 36.5 nC Qrr minimizes switching loss and voltage overshoot during inductive flyback.

Use Scenario: Constant-current sink for high-brightness LED strings in signage and architectural lighting.

IC Role / Device Role / Timing Role: Linear or PWM-controlled current regulator placed between LED cathodes and ground.

Use Value: -2 to -4 V VGS(th) enables precise analog dimming control; low RDS(on) ensures <0.5% current error across 0–3 A range.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel power switching applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IRF9530NPBFRDS(on) = 0.3 Ω @ -10 V (higher), Qg = 60 nC (much higher), TO-220 packageRequires larger PCB area and heatsink; unsuitable for high-frequency or space-constrained designsChoose only if legacy TO-220 footprint is mandatory and thermal budget permits higher losses.
DMG2305UVT-7RDS(on) = 0.045 Ω @ -4.5 V (lower), but VDS = -20 V (significantly lower), SOT-23 packageLimited to ≤24 V systems; insufficient for 48 V industrial or automotive inputsSelect when low gate drive voltage (-4.5 V) and ultra-low RDS(on) are critical, and voltage stress remains below 20 V.

Compared with IRF9530NPBF and DMG2305UVT-7, STN3P10F6 uniquely balances -100 V rating, 0.136 Ω conduction loss, and SOT-223 thermal performance-making it optimal for 36–48 V industrial switching where both voltage headroom and board-area efficiency matter.

Availability

STN3P10F6 is available at Aetrix Electronics and suitable for industrial motor control, automotive body electronics, LED driver design, and battery-powered power supply sequencing requiring stable component supply and long-term manufacturability.

Supply support for STN3P10F6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

The STripFET™ F6 product line targets high-efficiency medium-voltage power switching, emphasizing low RDS(on), fast switching, and ruggedness in compact surface-mount packages for space- and thermal-sensitive applications.

FAQ

What is the maximum safe operating voltage for STN3P10F6 in continuous DC applications?

The absolute maximum drain-source voltage is -100 V, but continuous operation should remain within the Safe Operating Area (SOA) limits defined in Figure 2 of the datasheet. At DC, derating is required above 25 °C ambient due to thermal constraints-maximum sustainable VDS drops as current or temperature increases. For reliable long-term use, ST recommends staying ≥20% below -100 V under worst-case transient conditions.

Can STN3P10F6 be used in linear (analog) regulation mode?

Yes, but with strict thermal management: its RDS(on) and SOA allow limited linear operation only at low VDS × ID products. For example, dissipating >0.5 W requires substantial copper area or forced cooling. The device is optimized for switching, not linear regulation-use dedicated LDOs or regulators for precision analog control.

Does STN3P10F6 require a gate resistor for ESD protection or switching control?

A series gate resistor (typically 4.7–47 Ω) is recommended to dampen ringing and limit peak gate current during fast transitions. While not required for ESD protection (IGSS is ±100 nA), it improves electromagnetic compatibility and prevents driver overstress. Values below 1 Ω risk oscillation; above 100 Ω slows switching and increases loss.

Is the SOT-223 package lead-free and RoHS-compliant?

Yes-STN3P10F6 carries ECOPACK® certification, meeting RoHS Directive 2011/65/EU and being halogen-free per IEC 61249-2-21. The SOT-223 package uses matte tin plating over copper leads and complies with JEDEC J-STD-020 moisture sensitivity level 1 (unlimited floor life at ≤30 °C/85% RH).

STN3P10F6 Specifications

Product attributes
Attribute value
Manufacturer:
STMicroelectronics
Series:
-
Package/Case:
TO-261-4, TO-261AA
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
P-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
100 V
Current - Continuous Drain (Id) @ 25°C:
3A
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
180mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
16.5 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
900 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
3.3W
Operating Temperature:
-55°C ~ 175°C
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-223

STN3P10F6 FAQ

1.How can I place an order for STN3P10F6 through Aetrix?

Please submit a Request for Quotation (RFQ) for STN3P10F6 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STN3P10F6 reliable?

The price and inventory of STN3P10F6 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STN3P10F6 is usually 5 days.

3.What payment methods are accepted for STN3P10F6?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STN3P10F6 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STN3P10F6?

STN3P10F6 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STN3P10F6 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STN3P10F6?

For technical support, including STN3P10F6 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STN3P10F6 requirements.

6.How does Aetrix verify that STN3P10F6 is sourced from the original manufacturer or authorized distributors?

All STN3P10F6 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STN3P10F6 meets industry standards.

7.What is the process for return or replacement of STN3P10F6?

All STN3P10F6 units undergo pre-shipment inspection (PSI). If there is an issue with STN3P10F6, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STN3P10F6 part is unused and in its original packaging.

Return procedure for STN3P10F6:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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