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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STN5PF02V

Name: STN5PF02V
Brand: STMicroelectronics
SKU: STN5PF02V
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STN5PF02V

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-261-4, TO-261AA

Datasheet:: STN5PF02V.pdf

Description:: MOSFET P-CH 20V 4.2A SOT223

Quantity:: RFQ Add To RFQ list

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Inventory:5,845

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Product details

Overview

STN5PF02V from STMicroelectronics is a P-channel enhancement-mode Power MOSFET in SOT-223 package, rated for 20 V V_DS, 4.2 A continuous drain current at T_C = 25°C, and ultra-low 0.065 Ω R_DS(on) at V_GS = 4.5 V. It features 2.5 V gate threshold drive capability and is optimized for low-voltage DC switching in power management circuits.

For engineers reviewing the STN5PF02V datasheet, STN5PF02V pinout, STN5PF02V application, or STN5PF02V equivalent, this device is selected for high-efficiency, space-constrained load switching where low gate-drive voltage and minimal conduction loss are critical - especially in battery-powered systems with 3.3 V or 5 V logic control.

Technical Context

This MOSFET employs ST's StripFET™ II process to achieve single-feature-size geometry, enabling high cell density and reduced on-resistance. Its p-channel topology supports high-side switching without level-shifting circuitry when driven from 2.5 V logic.

The device exhibits 4.5 nC total gate charge and fast switching (t_d(on) = 11 ns, t_f = 20 ns) under 4.7 Ω gate resistance, with integrated source-drain diode (V_SD = 1.2 V at 4.2 A) supporting synchronous rectification or flyback recovery.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	20 V - Maximum drain-source blocking voltage; suitable for 12 V rail switching and automotive 12 V system loads.
R_DS(on) @ V_GS = 2.5 V	0.080 Ω max - Enables full-load conduction with <140 mW I²R loss at 4.2 A, critical for thermally constrained PCBs.
I_D (continuous)	4.2 A @ T_C = 25°C - Supports medium-power loads such as LED drivers or motor gate drivers in compact SOT-223 footprint.
Q_g	4.5 nC - Low gate charge reduces driver power demand and enables efficient operation with microcontroller GPIOs.
T_j max	150 °C - Specifies maximum junction temperature for thermal design margin in sealed enclosures or high ambient environments.
R_thj-pcb	50 °C/W - Thermal resistance to PCB pad (1 in², 2 oz Cu); defines achievable power dissipation with standard layout.

Pinout & Package

SOT-223 package: 4-pin outline with exposed drain tab (pin 2 and 3 internally connected), standardized for automated surface-mount assembly and moderate power dissipation.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control input	Receives 2.5–8 V logic-level signal; low V_GS(th) (0.45 V typ.) ensures turn-on with 3.3 V microcontrollers.
2 (Drain)	High-side switch output	Connected to load supply rail; electrically tied to pin 3 (exposed tab) for thermal and electrical path to PCB copper pour.
3 (Drain / Tab)	Thermal & power return	Exposed metal tab soldered to large PCB pad; primary heat dissipation path (R_thj-pcb = 50 °C/W).
4 (Source)	Reference node	Connected to system ground or load return; defines channel polarity and enables high-side configuration.

Key Features

Feature	Design Value
Ultra-low gate threshold	V_GS(th) = 0.45 V typ., enabling direct drive from 2.5 V logic without external level shifters.
StripFET™ II process	Single-feature-size geometry delivers 0.065 Ω R_DS(on) at 4.5 V, reducing conduction loss by >30% vs prior-generation SOT-223 p-MOSFETs.
Low gate charge	Q_g = 4.5 nC minimizes switching energy and allows use with low-current GPIOs (e.g., STM32L series).
Integrated body diode	V_SD = 1.2 V at 4.2 A supports freewheeling in buck regulators or relay driving without external diodes.

Applications

Battery-Powered Load Switch

USB Port Power Control

Use Scenario: Enabling/disabling power to peripheral modules (e.g., sensors, radios) in portable medical devices or IoT edge nodes.

IC Role / Device Role / Timing Role: High-side load switch controlled by MCU GPIO; operates in static on/off mode with no PWM.

Use Value: 2.5 V gate drive compatibility eliminates need for dedicated level shifter; 0.080 Ω R_DS(on) limits dropout to <340 mV at 4.2 A, preserving battery runtime.

Use Scenario: Overcurrent-protected USB VBUS switching in host controllers or docking stations.

IC Role / Device Role / Timing Role: Current-limiting high-side switch with fast turn-off (<20 ns fall time) to prevent fault propagation during short events.

Use Value: Low Q_g and fast switching enable precise timing control; integrated diode handles reverse current during hot-plug transients.

Industrial 12 V Rail Sequencing

LED Backlight Dimming Driver

Use Scenario: Controlled power-up sequencing of multiple 12 V subsystems (e.g., analog front-ends, ADCs) in programmable logic controllers.

IC Role / Device Role / Timing Role: Voltage-rail enable switch with soft-start via RC gate control; leverages low V_GS(th) for predictable turn-on timing.

Use Value: Tight V_GS(th) distribution (0.45 V typ.) ensures consistent sequencing across temperature; SOT-223 allows placement near rail inputs without heatsink.

Use Scenario: Constant-current LED string control in signage or automotive interior lighting using PWM dimming.

IC Role / Device Role / Timing Role: High-side PWM switch modulating current through LED string; operates at 1–10 kHz with minimal switching loss.

Use Value: 4.5 nC Q_g and 20 ns fall time minimize dead-time losses; R_DS(on) stability over temperature ensures consistent brightness across operating range.

Equivalent & Alternatives

The following parts are listed as comparable options for similar p-channel MOSFET switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMG2305UVT-7	R_DS(on) = 0.045 Ω @ V_GS = 4.5 V; smaller SOT-523 package; higher V_GS(th) (0.7 V min)	Lower power handling (2.2 A); unsuitable for >3 A continuous loads or high-temperature PCBs	Select for ultra-compact layouts where current <2 A and gate drive ≥3.3 V is available.
FDV303P	R_DS(on) = 0.095 Ω @ V_GS = 2.5 V; same SOT-223; higher Q_g (6.5 nC)	Slower switching (t_f = 35 ns); higher gate drive loss in PWM applications	Select when cost sensitivity outweighs switching efficiency, and thermal margin permits higher R_DS(on).

Compared with DMG2305UVT-7 and FDV303P, STN5PF02V uniquely balances 2.5 V drive capability, 4.2 A rating, and 4.5 nC gate charge in SOT-223 - making it optimal for medium-power, logic-compatible high-side switching where thermal and timing constraints coexist.

Availability

STN5PF02V is available at Aetrix Electronics and suitable for battery-powered load switching, USB port power control, and industrial 12 V rail sequencing requiring stable component supply and long-term BOM continuity.

Supply support for STN5PF02V includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, designing and manufacturing analog, digital, and mixed-signal ICs for industrial, automotive, and consumer markets.

This device belongs to ST's StripFET™ Power MOSFET product line, engineered specifically for high-efficiency, low-voltage DC switching in space- and thermally-constrained applications.

FAQ

Is STN5PF02V suitable for high-side switching with 3.3 V microcontroller GPIO?

Yes. With V_GS(th) = 0.45 V (typ.) and guaranteed turn-on at V_GS = 2.5 V, it fully enhances using 3.3 V logic. R_DS(on) = 0.080 Ω max at V_GS = 2.5 V ensures low conduction loss without external level shifting.

What is the maximum continuous current at 85°C case temperature?

Per the derating curve in the datasheet, ID drops linearly from 4.2 A at 25°C to 2.6 A at 100°C. At 85°C case temperature, the maximum continuous current is approximately 3.1 A, assuming proper PCB thermal design per R_thj-pcb = 50 °C/W.

Can STN5PF02V replace an N-channel MOSFET in a high-side configuration?

Yes - unlike N-channel devices, this P-channel MOSFET is inherently suited for high-side switching without bootstrap circuitry. Its 2.5 V gate drive and SOT-223 thermal performance make it a direct functional replacement where polarity and voltage ratings match.

Does STN5PF02V have lead-free and RoHS-compliant packaging?

Yes. It is supplied in ECOPACK®-compliant SOT-223 packaging with lead-free second-level interconnect, meeting JEDEC JESD97 standards. The inner box label indicates compliance, and no lead-based solder is used in termination.

STN5PF02V Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: STripFET™ II

Package/Case:: TO-261-4, TO-261AA

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 4.2A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 2.5V, 4.5V

Rds On (Max) @ Id, Vgs:: 80mOhm @ 2.1A, 4.5V

Vgs(th) (Max) @ Id:: 450mV @ 250µA (Min)

Gate Charge (Qg) (Max) @ Vgs:: 6 nC @ 2.5 V

Vgs (Max):: ±8V

Input Capacitance (Ciss) (Max) @ Vds:: 412 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-223

STN5PF02V FAQ

1.How can I place an order for STN5PF02V through Aetrix?

Please submit a Request for Quotation (RFQ) for STN5PF02V on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STN5PF02V reliable?

The price and inventory of STN5PF02V are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STN5PF02V is usually 5 days.

3.What payment methods are accepted for STN5PF02V?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STN5PF02V transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STN5PF02V?

STN5PF02V orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STN5PF02V order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STN5PF02V?

For technical support, including STN5PF02V datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STN5PF02V requirements.

6.How does Aetrix verify that STN5PF02V is sourced from the original manufacturer or authorized distributors?

All STN5PF02V products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STN5PF02V meets industry standards.

7.What is the process for return or replacement of STN5PF02V?

All STN5PF02V units undergo pre-shipment inspection (PSI). If there is an issue with STN5PF02V, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STN5PF02V part is unused and in its original packaging.

Return procedure for STN5PF02V:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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