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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STO67N60M6

Name: STO67N60M6
Brand: STMicroelectronics
SKU: STO67N60M6
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STO67N60M6

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: 8-PowerSFN

Datasheet:: STO67N60M6.pdf

Description:: MOSFET N-CH 600V 34A TOLL

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STO67N60M6 from STMicroelectronics is a 600 V, 57 A N-channel MDmesh M6 superjunction MOSFET in TO-LL package, featuring 45 mΩ typical R_DS(on), 75.1 nC total gate charge, and 100 V/ns MOSFET dv/dt ruggedness. It delivers low conduction loss and fast switching for high-efficiency LLC and boost PFC converters operating at 100–300 kHz.

For engineers reviewing the STO67N60M6 datasheet, STO67N60M6 pinout, STO67N60M6 application, or STO67N60M6 equivalent, key selection criteria include avalanche-rated ruggedness (760 mJ E_AS), Zener-protected gate, extra driver source pin for reduced common-source inductance, and TO-LL thermal performance (R_thJC = 0.35 °C/W).

Technical Context

This MOSFET uses ST's MDmesh M6 silicon technology to achieve 54 mΩ max R_DS(on) at 10 V gate drive while maintaining 15 V/ns diode recovery dv/dt capability and 100 V/ns MOSFET dv/dt ruggedness under hard-switching conditions. Its integrated Zener gate protection and 100% avalanche testing support robust operation in unclamped inductive loads.

The TO-LL package features a thermally enhanced drain-tab layout with separate driver source (pin 2) and power source (pins 3–8), enabling precise gate loop control and minimizing voltage overshoot during turn-off. The device exhibits 340 ns reverse recovery time (T_J = 25 °C) and 12 µC Q_rr at 150 °C, optimized for soft-recovery topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - Withstands DC bus voltages up to 480 V in continuous operation with margin for transients.
R_DS(on) max	54 mΩ - Enables <1.5 W conduction loss at 57 A, reducing heatsink requirements in high-current PFC stages.
Q_g	75.1 nC - Supports efficient 100–300 kHz switching with moderate gate driver current (≈15 mA avg @ 200 kHz).
E_AS	760 mJ - Rated single-pulse avalanche energy ensures reliability during startup, overload, or fault events without external snubbers.
R_thJC	0.35 °C/W - Delivers 357 W total power dissipation at T_C = 25 °C, enabling compact thermal design with direct tab mounting.
dv/dt ruggedness	100 V/ns - Immune to false turn-on in high-di/dt environments such as phase-shifted full-bridge or resonant LLC primary switches.
V_SD	1.5 V - Low body diode forward voltage reduces circulating current losses in synchronous rectification and bidirectional topologies.

Pinout & Package

TO-LL package: 8-pin surface-mount outline with exposed drain tab (pin 1), gate (pin 1), driver source (pin 2), and parallel power source terminals (pins 3–8). Optimized for low-inductance PCB layout and high thermal transfer via soldered drain tab.

Pin/Terminal	Circuit Role	Design Meaning
1 (TAB)	Drain	Exposed copper drain pad - primary thermal path to PCB; must be soldered to large copper area for R_thJC = 0.35 °C/W performance.
1 (G)	Gate	Standard gate input - driven by isolated gate driver; low 3.6 Ω intrinsic gate resistance enables clean edge control.
2	Driver Source	Dedicated Kelvin source for gate driver return - eliminates common-source inductance, preventing gate oscillation and overvoltage.
3–8	Power Source	Parallel source terminals - carry main load current (57 A continuous); reduce current density and resistive loss in source path.

Key Features

Feature	Design Value
MDmesh M6 silicon technology	54 mΩ R_DS(on) at 600 V - 20% lower on-resistance per die area vs. prior MDmesh generations, improving power density.
Extra driver source pin (pin 2)	Eliminates gate loop inductance - enables stable 100+ V/ns switching without external gate resistors or ferrite beads.
Zener-protected gate	±25 V V_GS rating with integrated clamp - prevents gate oxide damage during ESD events or driver faults.
100% avalanche tested	760 mJ E_AS at T_J = 25 °C - guarantees ruggedness in real-world unclamped inductive switching without derating.
Low C_oss eq.	750 pF - reduces capacitive turn-on loss and improves light-load efficiency in resonant converters.

Applications

LLC Resonant Converter Primary Switch

Boost PFC Stage Switch

Use Scenario: High-frequency (150–300 kHz) primary-side switch in server/telecom LLC half-bridge converters with 380–400 V DC bus.

IC Role / Device Role / Timing Role: Main power switch handling 57 A peak current; operates in ZVS region with low Q_gd/Q_gs ratio (1.7:1) for minimal dead-time sensitivity.

Use Value: 34.6 nC Q_gd and 100 V/ns dv/dt ruggedness ensure reliable zero-voltage switching across line/load variations without added snubbers.

Use Scenario: Continuous conduction mode (CCM) boost switch in 3.3 kW industrial PFC front-end with 96% target efficiency.

IC Role / Device Role / Timing Role: High-duty-cycle switching element conducting 57 A RMS; leverages low R_DS(on) and 1.5 V V_SD to minimize conduction + reverse recovery loss.

Use Value: 5.6 µC Q_rr (25 °C) and 340 ns t_rr reduce diode recovery loss by >40% vs. standard SJ MOSFETs, directly improving full-load efficiency.

Industrial Motor Drive Inverter Leg

High-Voltage DC-DC Isolated Converter

Use Scenario: Upper-leg switch in 600 V three-phase inverter driving 7.5 kW permanent magnet motor with field-oriented control.

IC Role / Device Role / Timing Role: High-side switching device subjected to rapid bus transients; requires immunity to Miller-induced turn-on and avalanche stress.

Use Value: 100 V/ns dv/dt ruggedness and 100% avalanche screening prevent shoot-through and catastrophic failure during IGBT/MOSFET cross-conduction faults.

Use Scenario: Primary switch in 1 kW, 600 V input, 48 V output isolated full-bridge DC-DC converter for EV charging infrastructure.

IC Role / Device Role / Timing Role: Hard-switched bridge leg element requiring low Q_g and high V_DS margin for 600 V bus with 15% overvoltage tolerance.

Use Value: 600 V V_(BR)DSS with 10% margin above 480 V max operating voltage ensures long-term reliability under surge conditions per IEC 61000-4-5.

Equivalent & Alternatives

The following parts are listed as comparable options for similar 600 V superjunction MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Infineon IPA60R1K0P7	1000 mΩ R_DS(on), TO-220FP package, no driver source pin, 45 V/ns dv/dt ruggedness	Limited to <100 kHz hard-switched PFC; unsuitable for LLC due to higher Q_g (95 nC) and no Kelvin source	Select only for cost-sensitive, low-frequency (<80 kHz), non-resonant designs where thermal budget allows larger heatsink.
ON Semiconductor FCH067N60F	67 mΩ R_DS(on), TO-247 package, 70 nC Q_g, no Zener gate protection, 60 V/ns dv/dt ruggedness	Requires external gate Zener and snubber in high-di/dt applications; higher conduction loss increases thermal stress	Preferable only when TO-247 mechanical fit is mandatory and board-level protection can be added without compromising layout compactness.

Compared with IPA60R1K0P7 and FCH067N60F, STO67N60M6 offers superior switching efficiency (75.1 nC Q_g, 100 V/ns dv/dt), integrated gate protection, and TO-LL thermal performance-making it optimal for space-constrained, high-frequency resonant and PFC systems demanding reliability without external components.

Availability

STO67N60M6 is available at Aetrix Electronics and suitable for LLC resonant converters, boost PFC stages, and industrial motor drive inverters requiring stable component supply, consistent parametric performance, and long-term lifecycle support.

Supply support for STO67N60M6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.

STO67N60M6 belongs to the MDmesh M6 superjunction MOSFET product line, engineered specifically for high-efficiency, high-frequency AC-DC and DC-DC power conversion in telecom, server, and industrial equipment.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STO67N60M6 supports 36 A continuous drain current at T_C = 100 °C, as specified in Table 1 of DS13208 Rev 4. This derating reflects thermal limits of the TO-LL package and ensures safe operation within the SOA boundary at elevated temperatures without exceeding 150 °C junction temperature.

Does the device require an external gate Zener diode?

No. STO67N60M6 integrates internal Zener protection between gate and source, rated for ±25 V V_GS. This eliminates the need for external gate clamping components in standard gate driver configurations, simplifying layout and improving reliability against transient overvoltage.

How does the driver source pin (pin 2) improve switching behavior?

The dedicated driver source pin provides a Kelvin connection for the gate driver return path, decoupling gate loop inductance from the high-current source path. This prevents voltage spikes across source inductance during turn-off, enabling faster, more predictable switching with reduced risk of false turn-on or oscillation.

Is the TO-LL package lead-free and RoHS compliant?

Yes. STO67N60M6 is manufactured in ST's ECOPACK2-compliant TO-LL package, meeting RoHS Directive 2011/65/EU and REACH Regulation (EC) No. 1907/2006. Full environmental compliance documentation is available via ST's official product page and packaging data sheets.

STO67N60M6 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ M6

Package/Case:: 8-PowerSFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 34A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 54mOhm @ 26A, 10V

Vgs(th) (Max) @ Id:: 4.75V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 72.5 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 3400 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 150W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TOLL (HV)

STO67N60M6 FAQ

1.How can I place an order for STO67N60M6 through Aetrix?

Please submit a Request for Quotation (RFQ) for STO67N60M6 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STO67N60M6 reliable?

The price and inventory of STO67N60M6 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STO67N60M6 is usually 5 days.

3.What payment methods are accepted for STO67N60M6?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STO67N60M6 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STO67N60M6?

STO67N60M6 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STO67N60M6 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STO67N60M6?

For technical support, including STO67N60M6 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STO67N60M6 requirements.

6.How does Aetrix verify that STO67N60M6 is sourced from the original manufacturer or authorized distributors?

All STO67N60M6 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STO67N60M6 meets industry standards.

7.What is the process for return or replacement of STO67N60M6?

All STO67N60M6 units undergo pre-shipment inspection (PSI). If there is an issue with STO67N60M6, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STO67N60M6 part is unused and in its original packaging.

Return procedure for STO67N60M6:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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