STMicroelectronics STP100N6F7

Overview

STP100N6F7 from STMicroelectronics is an N-channel 60 V, 4.7 mΩ typ. R_DS(on), 100 A continuous drain current Power MOSFET in TO-220 package, utilizing STripFET™ F7 trench technology for low conduction loss and fast switching. It delivers 125 W total power dissipation at T_C = 25 °C and supports unclamped inductive switching with 200 mJ single-pulse avalanche energy - used in high-current DC-DC converters and motor drive half-bridges.

For engineers reviewing the STP100N6F7 datasheet, STP100N6F7 pinout, STP100N6F7 application, or STP100N6F7 equivalent, key selection criteria include R_DS(on) at 10 V gate drive, Crss/Ciss ratio for EMI robustness, thermal resistance (R_thj-case = 1.2 °C/W), and safe operating area (SOA) compliance at 100 °C case temperature.

Technical Context

This MOSFET employs an enhanced trench-gate STripFET™ F7 structure that reduces both on-resistance and gate charge (Q_g = 30 nC typ.) while maintaining high avalanche ruggedness. Its low Crss (86 pF) relative to Ciss (1980 pF) yields a Crss/Ciss ratio of ~4.3%, improving EMI immunity during hard-switching.

The device operates across –55 to +175 °C junction temperature range and features a source-drain diode with 1.2 V forward voltage at 100 A and 48.4 ns reverse recovery time under defined inductive turn-off conditions (di/dt = 100 A/µs, V_DD = 48 V).

Key Specifications

Pinout & Package

TO-220 package with isolated tab (pin 1: Gate, pin 2: Drain, pin 3: Source). The metal tab is electrically connected to the Drain terminal and must be insulated from chassis when mounted to grounded heatsinks.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IRFP100N60LPbF and IXTH100N6X2, STP100N6F7 offers optimal balance of ultra-low R_DS(on), moderate Q_g, TO-220 compatibility, and proven avalanche ruggedness - making it ideal for cost-sensitive, space-constrained 48 V industrial power stages where thermal and EMI constraints dominate.

Availability

STP100N6F7 is available at Aetrix Electronics and suitable for motor drives, uninterruptible power supplies, and industrial solenoid controllers requiring stable component supply and long-term production continuity.

Supply support for STP100N6F7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

The STripFET™ F7 series targets high-efficiency, high-current power conversion applications - specifically engineered to replace older MOSFET generations in 24–60 V systems where R_DS(on), switching speed, and avalanche reliability are critical.

FAQ

Is STP100N6F7 suitable for surface-mount assembly?

No. STP100N6F7 uses a through-hole TO-220 package with leads designed for axial insertion and soldering. It is not compatible with reflow or wave soldering processes intended for SMD components. Thermal performance relies on mechanical mounting of the tab to an external heatsink, which requires screw or clip attachment - not achievable in standard SMT workflows.

What is the maximum recommended gate resistor value for 100 kHz switching?

For reliable 100 kHz operation with minimal switching loss, the gate resistor should not exceed 4.7 Ω when driven by a ±2 A peak gate driver. At higher frequencies, lower values (2.2–3.3 Ω) are advised to ensure full gate charge/discharge within <50 ns, given Q_g = 30 nC and typical driver output impedance. Exceeding 10 Ω risks incomplete turn-on and increased conduction time.

Does STP100N6F7 require a gate driver IC, or can it be driven directly from a microcontroller?

A microcontroller GPIO cannot safely drive STP100N6F7 directly. With 30 nC total gate charge and 100 A current capability, it requires a dedicated gate driver (e.g., STGAP2S, IRS2007) capable of ≥1 A peak sink/source current and rail-to-rail 10–15 V output. Direct MCU drive causes slow switching, excessive heating, and potential gate oxide damage due to insufficient current and voltage margin.

How does the body diode performance compare to discrete Schottky diodes in synchronous rectification?

The integrated body diode has V_SD = 1.2 V at 100 A and t_rr = 48.4 ns - higher forward drop than 0.5 V Schottky diodes but faster recovery than standard PN diodes. In 48 V synchronous rectifiers, it enables >94% efficiency at full load when paired with precise gate timing, though discrete Schottky remains superior below 20 A due to lower V_F.