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STMicroelectronics STP10LN80K5
- Part No.:
- STP10LN80K5
- Manufacturer:
- STMicroelectronics
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
STP10LN80K5.pdf
- Description:
- MOSFET N-CH 800V 8A TO220
- Quantity:
- Payment:
- Shipping:
Inventory:4,803
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Product details
Overview
STP10LN80K5 from STMicroelectronics is an N-channel 800 V, 550 mΩ typ. (630 mΩ max.), 8 A MDmesh K5 Power MOSFET in TO-220 package, designed for high-voltage switching applications requiring ultra-low gate charge (15 nC), low figure of merit, and robust avalanche capability (240 mJ single-pulse). It serves as a primary high-side switch in industrial SMPS, PFC stages, and HV DC-DC converters.
For engineers reviewing the STP10LN80K5 datasheet, STP10LN80K5 pinout, STP10LN80K5 application, or STP10LN80K5 equivalent, key selection criteria include its 800 V V(BR)DSS rating, 1.14 °C/W RthJC, Zener-protected gate, 100% avalanche tested construction, and dv/dt ruggedness up to 50 V/ns - critical for reliable operation in hard-switched HV topologies.
Technical Context
This device employs ST's proprietary MDmesh K5 vertical superjunction architecture to achieve simultaneous reduction in RDS(on) and gate charge, enabling higher power density and efficiency in 600–800 V systems. Its optimized capacitance profile (Ciss = 427 pF, Crss = 0.25 pF) supports fast, low-loss switching with minimal Miller-induced turn-on risk.
The integrated source-drain diode features low VSD (1.5 V at 8 A) and controlled reverse recovery (Qrr = 3.9 µC, trr = 350 ns at 25 °C), making it suitable for quasi-resonant and hard-switched inductive loads. Avalanche robustness (EAS = 240 mJ) and 50 V/ns MOSFET dv/dt ruggedness ensure reliability under transient overvoltage conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| V(BR)DSS | 800 V - Withstands DC bus voltages up to 640 V in continuous operation with margin for transients. |
| RDS(on) max | 630 mΩ at VGS = 10 V, ID = 4 A - Enables <1.5 W conduction loss at 8 A, supporting thermally constrained designs. |
| Qg | 15 nC - Reduces gate drive power and enables use with lower-current drivers in high-frequency (>100 kHz) SMPS. |
| EAS | 240 mJ (single pulse, TJ = 25 °C) - Supports unclamped inductive switching without external snubbers in PFC and motor drives. |
| RthJC | 1.14 °C/W - Allows 96 W continuous dissipation at TC = 25 °C, enabling compact heatsink sizing in TO-220 mounting. |
| dv/dt ruggedness | 50 V/ns - Prevents spurious turn-on during fast voltage transients in bridge-leg configurations. |
| Co(er) | 27 pF - Low energy-related output capacitance minimizes switching loss during zero-voltage transition phases. |
Pinout & Package
Package: TO-220 type A (ECOPACK® compliant), with insulated tab (DRAIN connected to metal tab), standard 3-pin through-hole configuration.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | High-impedance control input; requires ≤±30 V drive; Zener-protected against ESD and overvoltage. |
| 2 (TAB/D) | Drain (Metal Tab) | Primary high-voltage node; electrically connected to package tab; must be isolated from heatsink unless referenced to same potential. |
| 3 (S) | Source | Power return path and reference for gate drive; carries full load current and reverse diode conduction current. |
Key Features
| Feature | Design Value |
|---|---|
| MDmesh K5 vertical structure | Reduces RDS(on) × Qg FoM by >40% vs. prior-generation 800 V MOSFETs, improving efficiency in 65–300 kHz SMPS. |
| 100% avalanche tested | Each unit validated for single-pulse EAS ≥240 mJ, eliminating need for system-level derating in inductive switching. |
| Zener-protected gate | Integrated 30 V gate-body Zener clamps transients, allowing direct microcontroller GPIO drive without external protection. |
| Low Crss / high Ciss ratio | Crss = 0.25 pF vs. Ciss = 427 pF yields high Miller ratio (≈1700×), suppressing false turn-on during high dv/dt commutation. |
| Optimized body diode | Qrr = 3.9 µC and soft recovery (IRRM = 22.5 A) reduce EMI and stress on complementary switches in bridge circuits. |
Applications
| Industrial Switched-Mode Power Supplies | Active PFC Front-End Stages |
|---|---|
|
Use Scenario: Primary switch in 1–3 kW offline flyback or forward converters operating at 65–130 kHz with 700–800 V DC bus. IC Role / Device Role / Timing Role: High-side main power switch handling full load current and voltage stress during PWM on-time. Use Value: 630 mΩ RDS(on) and 15 nC Qg enable >94% efficiency at full load while maintaining thermal margin on standard TO-220 heatsinks. |
Use Scenario: Boost switch in universal-input (90–264 VAC) active PFC circuits delivering 1.5–2.5 kW with THD <5%. IC Role / Device Role / Timing Role: Fast-switching boost transistor managing high peak currents and 800 V blocking during line peaks. Use Value: 50 V/ns dv/dt ruggedness prevents false turn-on during zero-crossing transitions; low Qgd ensures clean gate drive timing. |
| High-Voltage DC-DC Converters | Motor Drive Inverter Stages |
|
Use Scenario: Isolated DC-DC stage in EV charging stations or telecom rectifiers converting 800 V DC input to 48/54 V output. IC Role / Device Role / Timing Role: Primary side switch in phase-shifted full-bridge or LLC resonant topologies. Use Value: Co(er) = 27 pF and low Eoss minimize capacitive switching losses at 200–500 kHz, improving power density. |
Use Scenario: Upper-leg switch in 3-phase IGBT/MOSFET inverters for HVAC compressors or industrial pumps (400–690 V AC output). IC Role / Device Role / Timing Role: High-side switching element subjected to shoot-through risk and inductive flyback energy. Use Value: 240 mJ EAS rating absorbs inductive energy during fault events; avalanche-tested reliability avoids external clamping circuits. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STW12N80K5 | 12 A ID, 450 mΩ RDS(on) max, same 800 V rating and MDmesh K5 process; larger die, higher Qg (22 nC). | Better conduction loss at >10 A, but requires stronger gate driver; higher thermal mass limits switching frequency. | Select when average load exceeds 10 A and thermal design allows larger heatsink; avoid in >200 kHz designs due to Qg penalty. |
| IPP60R099C7 | 650 V V(BR)DSS, 99 mΩ RDS(on), 60 A ID, Infineon CoolMOS C7; not 800 V rated. | Not suitable for 800 V bus applications; superior efficiency below 600 V, but fails safety margin at 700+ V DC link. | Only consider if system DC bus is confirmed ≤600 V; requires redesign of snubber and gate drive for lower VGS(th) and different Qg profile. |
Compared with STW12N80K5, STP10LN80K5 offers lower gate drive demand and better high-frequency suitability; compared with IPP60R099C7, it provides essential 800 V rating and avalanche robustness for industrial HV systems where bus voltage margin is non-negotiable.
Availability
STP10LN80K5 is available at Aetrix Electronics and suitable for industrial switched-mode power supplies, active PFC front-end stages, and high-voltage DC-DC converters requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for STP10LN80K5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs, discrete devices, and MEMS sensors for automotive, industrial, and power applications.
STP10LN80K5 belongs to the MDmesh K5 high-voltage Power MOSFET product line, engineered specifically for efficiency-critical 600–800 V switching applications including server PSUs, solar inverters, and industrial motor drives.
FAQ
Is STP10LN80K5 suitable for use in a 750 V DC bus application?
Yes. With a guaranteed 800 V V(BR)DSS rating and 100% avalanche testing, STP10LN80K5 supports continuous operation at 750 V DC bus with adequate safety margin. Its 50 V/ns dv/dt ruggedness and 640 V-rated test condition (per datasheet note) confirm robustness under real-world transient overvoltages encountered in industrial HV systems.
Does STP10LN80K5 require a negative gate turn-off voltage?
No. The device has a gate threshold voltage of 3–5 V and is fully controllable with 0–10 V or 0–12 V gate drive. A negative turn-off voltage is not required or recommended; the integrated Zener protection clamps gate voltage to ±30 V, and standard CMOS or dedicated MOSFET drivers suffice for reliable switching.
Can STP10LN80K5 replace STP10NK80Z in existing designs?
Yes, with validation. STP10LN80K5 offers lower RDS(on) (630 mΩ vs. 850 mΩ), lower Qg (15 nC vs. 29 nC), and improved FoM versus STP10NK80Z (Zener-protected, avalanche-tested K5 vs. older Z-series). Gate drive compatibility is maintained, but layout review is advised due to faster switching edges and reduced Miller feedback.
What is the maximum continuous drain current at 100 °C case temperature?
The datasheet specifies ID = 5 A at TC = 100 °C (Table 1). This reflects thermal derating due to junction-to-case resistance (1.14 °C/W) and maximum TJ = 150 °C. At TC = 100 °C, allowable power dissipation drops to ~44 W, limiting sustainable DC current to 5 A with 630 mΩ RDS(on), assuming no additional ambient heating or airflow constraints.
STP10LN80K5 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- MDmesh™
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 800 V
- Current - Continuous Drain (Id) @ 25°C:
- 8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 630mOhm @ 4A, 10V
- Vgs(th) (Max) @ Id:
- 5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs:
- 15 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 427 pF @ 100 V
- FET Feature:
- -
- Power Dissipation (Max):
- 110W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220
STP10LN80K5 FAQ
1.How can I place an order for STP10LN80K5 through Aetrix?
Please submit a Request for Quotation (RFQ) for STP10LN80K5 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STP10LN80K5 reliable?
The price and inventory of STP10LN80K5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STP10LN80K5 is usually 5 days.
3.What payment methods are accepted for STP10LN80K5?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STP10LN80K5 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STP10LN80K5?
STP10LN80K5 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STP10LN80K5 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STP10LN80K5?
For technical support, including STP10LN80K5 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STP10LN80K5 requirements.
6.How does Aetrix verify that STP10LN80K5 is sourced from the original manufacturer or authorized distributors?
All STP10LN80K5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STP10LN80K5 meets industry standards.
7.What is the process for return or replacement of STP10LN80K5?
All STP10LN80K5 units undergo pre-shipment inspection (PSI). If there is an issue with STP10LN80K5, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STP10LN80K5 part is unused and in its original packaging.
Return procedure for STP10LN80K5:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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