STMicroelectronics STP10N105K5

Overview

STP10N105K5 from STMicroelectronics is a high-voltage N-channel Power MOSFET using MDmesh K5 technology, rated for 1050 V drain-source breakdown voltage, 1.3 Ω max R_DS(on) at V_GS = 10 V and I_D = 3 A, and 6 A continuous drain current at T_C = 25 °C. It features ultra-low gate charge (21.5 nC), Zener-protected gate, and 100% avalanche tested - designed for high-efficiency switching in HV AC-DC converters and industrial SMPS.

For engineers reviewing the STP10N105K5 datasheet, STP10N105K5 pinout, STP10N105K5 application, or STP10N105K5 equivalent, key selection criteria include its 1050 V rating, 1.3 Ω on-resistance, TO-220 package thermal resistance (R_thJC = 0.96 °C/W), avalanche energy rating (E_AS = 140 mJ), and diode recovery performance (Q_rr = 3.53 µC at T_J = 25 °C).

Technical Context

This MOSFET employs ST's proprietary MDmesh K5 vertical structure to achieve ultra-low R_DS(on) × Q_g figure of merit, enabling high power density in hard-switched topologies. Its gate threshold voltage (V_GS(th) = 3–5 V) ensures robust turn-on with standard 10 V gate drivers, while Zener protection guards against ±30 V gate-source transients.

The device integrates a fast-recovery body diode (t_rr = 345 ns, Q_rr = 3.53 µC at 25 °C) and supports high dv/dt ruggedness (50 V/ns), making it suitable for snubberless flyback and resonant LLC primary-side switches where voltage overshoot and diode reverse recovery are critical.

Key Specifications

Pinout & Package

STP10N105K5 is housed in a TO-220 package with non-insulated tab. The case (tab) is electrically connected to the drain terminal, requiring proper isolation when mounted to heatsinks.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Compared with STW10N105K5 and STF10N105K5, STP10N105K5 offers optimal thermal performance in standard TO-220 form factor without insulation overhead - ideal for cost-sensitive, space-constrained industrial SMPS where heatsink isolation is managed externally.

Availability

STP10N105K5 is available at Aetrix Electronics and suitable for industrial AC-DC converters, telecom rectifier modules, and EV charger auxiliary supplies requiring stable component supply, long-lifecycle support, and traceable sourcing.

Supply support for STP10N105K5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.

STP10N105K5 belongs to the MDmesh K5 high-voltage Power MOSFET product line, engineered specifically for high-efficiency, high-power-density switching power supplies operating above 600 V DC bus.

FAQ

What is the maximum continuous drain current for STP10N105K5 at 100 °C case temperature?

The maximum continuous drain current is 3.78 A at T_C = 100 °C, derated from 6 A at 25 °C per the thermal resistance R_thJC = 0.96 °C/W and safe operating area limits. This value assumes adequate heatsinking and ambient conditions compliant with TO-220 thermal derating curves.

Does STP10N105K5 have an integrated body diode, and what are its key recovery parameters?

Yes, it includes a monolithic source-drain diode rated for 6 A continuous and 24 A pulsed current. At T_J = 25 °C, its reverse recovery time is 345 ns and reverse recovery charge is 3.53 µC under ISD = 6 A, di/dt = 100 A/µs, and VDD = 60 V conditions - verified per Figure 19 test circuit in DS10606.

Can STP10N105K5 be driven directly by a 5 V microcontroller GPIO pin?

No - its gate threshold voltage ranges from 3 V to 5 V, but full enhancement requires V_GS ≥ 10 V to achieve R_DS(on) ≤ 1.3 Ω. A 5 V drive yields incomplete turn-on and excessive conduction loss; a dedicated gate driver (e.g., STMicro's STL135N10F7) is required for reliable operation.

Is the TO-220 tab of STP10N105K5 electrically isolated from the leads?

No - the metal tab is internally connected to the drain terminal (pin 2). It is not insulated; mounting to a grounded heatsink requires insulating hardware (e.g., silicone pad + shoulder washer) to prevent shorting the high-voltage drain node to chassis ground.