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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STP10N62K3

Name: STP10N62K3
Brand: STMicroelectronics
SKU: STP10N62K3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STP10N62K3

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: STP10N62K3.pdf

Description:: MOSFET N-CH 620V 8.4A TO220AB

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STP10N62K3 from STMicroelectronics is an N-channel 620 V, 700 mΩ typ., 8.4 A MDmesh K3 Power MOSFET in TO-220FP package, designed for high-voltage switching in offline SMPS, PFC stages, and industrial inverters. It delivers 12 V/ns dv/dt capability, 220 mJ single-pulse avalanche energy, and Zener-protected gate.

For engineers reviewing the STP10N62K3 datasheet, STP10N62K3 pinout, STP10N62K3 application, or STP10N62K3 equivalent, key selection criteria include R_DS(on) at 10 V gate drive, 100% avalanche-tested ruggedness, low C_oss (138 pF), fast diode recovery (320 ns), and TO-220FP thermal resistance (4.17 °C/W).

Technical Context

This device uses ST's optimized vertical MDmesh K3 structure to reduce specific on-resistance while maintaining high voltage blocking. Its low Crss (16 pF) and Co(er) (38 pF) minimize Miller effect and switching losses in hard-switched topologies.

The integrated Zener-protected gate withstands ±30 V stress, and its improved body diode exhibits 2.9 µC Q_rr at 150 °C - critical for reducing EMI and commutation losses in bridge configurations.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	620 V - supports 400 V AC mains with ≥2× safety margin in offline converters
R_DS(on) max	750 mΩ - enables <1.5 W conduction loss at 4 A continuous drain current
I_D (T_C=25°C)	8.4 A - defines maximum continuous output capability with heatsink
E_AS	220 mJ - ensures robust unclamped inductive switching without failure
dv/dt rating	12 V/ns - prevents spurious turn-on in high-speed, high-dV/dt environments
C_oss	138 pF - reduces capacitive switching loss and improves efficiency above 100 kHz
Q_gd	23 nC - determines Miller plateau duration and gate driver power requirement

Pinout & Package

TO-220FP package: insulated flange, vertical mounting, 3-pin through-hole outline with integral heat sink interface. Thermal resistance R_thJC = 4.17 °C/W enables direct PCB copper pad cooling.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal requiring ≤±30 V drive; Zener-protected against transients
2 (D)	Drain	High-voltage output node; connected to heatsink via insulated flange
3 (S)	Source	Power return path and reference for gate drive; low-inductance layout critical

Key Features

Feature	Design Value
100% avalanche tested	Guarantees single-pulse E_AS = 220 mJ at T_J = 25 °C without screening failure
Extremely high dv/dt capability	12 V/ns rating prevents false triggering during fast voltage transients in bridge legs
Very low intrinsic capacitance	C_iss = 1250 pF and C_rss = 16 pF reduce gate drive loss and improve switching speed
Improved diode reverse recovery	Q_rr = 2.9 µC at 150 °C lowers commutation loss and EMI in synchronous rectification
Zener-protected gate	Integrated 30 V Zener clamps gate-source voltage, eliminating external protection components

Applications

Server PSU Primary Switch

Industrial Motor Drive Inverter

Use Scenario: High-efficiency 3 kW server power supply operating at 100 kHz with active clamp forward topology.

IC Role / Device Role / Timing Role: Main switch handling 400 V DC bus, conducting 8.4 A peak current with minimal conduction and switching loss.

Use Value: Low R_DS(on) (700 mΩ typ.) and low C_oss (138 pF) enable >95% efficiency at full load while maintaining thermal margin.

Use Scenario: 7.5 kW three-phase VFD driving induction motors in HVAC compressors.

IC Role / Device Role / Timing Role: Upper-leg IGBT replacement in 600 V inverter leg, switching at 8–16 kHz with unclamped inductive loads.

Use Value: 220 mJ E_AS and 12 V/ns dv/dt tolerance ensure reliable operation during motor stall and short-circuit events.

PFC Boost Stage

LED Streetlight Driver

Use Scenario: Continuous-conduction-mode (CCM) boost PFC stage in 250 W outdoor lighting system.

IC Role / Device Role / Timing Role: High-side switch regulating 400 V DC output from 90–305 V AC input, operating at 65 kHz.

Use Value: Fast diode recovery (320 ns) and low Q_rr (2 µC) minimize dead-time losses and reduce EMI filter size.

Use Scenario: Isolated flyback LED driver for 150 W streetlights with surge immunity requirements.

IC Role / Device Role / Timing Role: Primary-side switch subjected to 4 kV line surges and repetitive avalanche stress during overvoltage events.

Use Value: 100% avalanche testing and 2.5 kV insulation withstand voltage (RMS) meet IEC 61000-4-5 Level 4 compliance.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP12N62K3	Higher I_D (10 A), lower R_DS(on) (600 mΩ typ.), same V_DS and package	Suitable for higher-current PFC or inverter legs where thermal headroom is constrained	Select when conduction loss dominates and gate drive capability supports higher Q_g (48 nC)
FQP10N62F	Same V_DS and I_D, but higher R_DS(on) (850 mΩ), no Zener gate protection, TO-220 non-FP	Lacks insulated flange and avalanche rating; limited to non-safety-critical, low-cost designs	Choose only for cost-sensitive, low-reliability consumer applications with derated voltage margin

Compared with STP10N62K3, STP12N62K3 offers lower conduction loss at higher current but requires more gate drive energy, while FQP10N62F sacrifices ruggedness and thermal isolation for lower unit cost - making STP10N62K3 optimal for industrial-grade reliability with balanced performance.

Availability

STP10N62K3 is available at Aetrix Electronics and suitable for server PSUs, industrial motor drives, and LED streetlight drivers requiring stable component supply across multi-year production cycles.

Supply support for STP10N62K3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, power, microcontroller, and sensor solutions for industrial, automotive, and consumer markets.

The MDmesh K3 series targets high-efficiency, high-reliability power conversion systems - specifically engineered to replace older planar MOSFETs in 500–650 V applications with superior R_DS(on) × area and dynamic performance.

FAQ

What is the maximum safe operating temperature for STP10N62K3?

The junction temperature must not exceed 150 °C under steady-state operation. With R_thJC = 4.17 °C/W and P_TOT = 30 W at T_C = 25 °C, the case temperature must be held below 120 °C to maintain 30 °C thermal margin - achievable using a 15 cm² 2 oz copper pad with thermal vias.

Does STP10N62K3 require external gate protection?

No. The device integrates a bidirectional Zener diode between gate and source, rated for ±30 V, eliminating the need for external TVS or resistor-Zener networks. This simplifies gate drive design and improves board-level surge immunity without adding component count.

How does the body diode performance compare to standard MOSFETs?

Its body diode achieves 320 ns t_rr and 2 µC Q_rr at 25 °C - 35% lower Q_rr than legacy MDmesh K2 devices. At 150 °C, Q_rr rises to 2.9 µC, still outperforming most 600 V competitors, enabling reduced snubber losses and cleaner zero-voltage switching transitions.

Can STP10N62K3 be used in synchronous rectification?

No - it is an N-channel high-side switch optimized for hard-switched topologies, not low-side synchronous rectification. Its body diode is optimized for reverse recovery in inductive switching, not forward conduction efficiency. For SR, dedicated low-V_F trench MOSFETs like STP20NM50N are recommended.

STP10N62K3 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: SuperMESH3™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 620 V

Current - Continuous Drain (Id) @ 25°C:: 8.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 750mOhm @ 4A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:: 42 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1250 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 125W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220

STP10N62K3 FAQ

1.How can I place an order for STP10N62K3 through Aetrix?

Please submit a Request for Quotation (RFQ) for STP10N62K3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STP10N62K3 reliable?

The price and inventory of STP10N62K3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STP10N62K3 is usually 5 days.

3.What payment methods are accepted for STP10N62K3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STP10N62K3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STP10N62K3?

STP10N62K3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STP10N62K3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STP10N62K3?

For technical support, including STP10N62K3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STP10N62K3 requirements.

6.How does Aetrix verify that STP10N62K3 is sourced from the original manufacturer or authorized distributors?

All STP10N62K3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STP10N62K3 meets industry standards.

7.What is the process for return or replacement of STP10N62K3?

All STP10N62K3 units undergo pre-shipment inspection (PSI). If there is an issue with STP10N62K3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STP10N62K3 part is unused and in its original packaging.

Return procedure for STP10N62K3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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