STMicroelectronics STP10N80K5

Overview

STP10N80K5 from STMicroelectronics is an N-channel 800 V, 470 mΩ typ. (600 mΩ max.), 9 A MDmesh K5 Power MOSFET in TO-220 package, designed for high-voltage switching in offline SMPS, PFC stages, and industrial inverters. It delivers ultra-low gate charge (22 nC), 100% avalanche tested ruggedness (EAS = 130 mJ), and Zener-protected gate, enabling reliable operation in hard-switched 600–800 V systems.

For engineers reviewing the STP10N80K5 datasheet, STP10N80K5 pinout, STP10N80K5 application, or STP10N80K5 equivalent, key selection criteria include its 800 V V(BR)DSS rating, 4.5 V–5 V gate threshold, 130 W power dissipation at TC = 25 °C, RthJC = 0.96 °C/W thermal resistance, and 370 ns reverse recovery time under ISD = 9 A conditions.

Technical Context

This device implements ST's MDmesh K5 vertical superjunction architecture to minimize RDS(on) × Qg FoM-achieving 470 mΩ typ. on-resistance with only 22 nC total gate charge. Its optimized cell layout supports high dv/dt ruggedness (50 V/ns) and robust unclamped inductive switching up to 3 A repetitive avalanche current.

The integrated body diode features low VSD = 1.5 V at ISD = 9 A and controlled trr = 370 ns (TJ = 25 °C), enabling efficient synchronous rectification and snubberless flyback designs. The Zener-protected gate ensures ±30 V VGS tolerance without external clamping.

Key Specifications

Pinout & Package

TO-220 package with isolated tab (drain-connected); standard 3-pin through-hole mounting; tab electrically tied to drain for direct heatsinking.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with IPP60R800P7XKSA1, STP10N80K5 provides 150 V higher blocking voltage and 15% lower RDS(on), enabling simpler 800 V designs; versus STW20N80K5, it trades current headroom and thermal margin for lower gate drive demand and TO-220 compatibility in legacy layouts.

Availability

STP10N80K5 is available at Aetrix Electronics and suitable for industrial motor drives, server PSU PFC stages, medical imaging HV supplies, and EV onboard charger input stages requiring stable component supply and long-term manufacturability.

Supply support for STP10N80K5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for automotive, industrial, and consumer markets.

STP10N80K5 belongs to the MDmesh K5 high-voltage Power MOSFET product line, engineered specifically for efficiency-critical 600–800 V switching applications including telecom rectifiers, industrial SMPS, and renewable energy inverters.

FAQ

Is STP10N80K5 suitable for zero-voltage switching (ZVS) topologies?

Yes. Its ultra-low Crss (0.8 pF) and 22 nC Qg enable clean ZVS transitions in phase-shifted full-bridge and LLC resonant converters. Measured trr of 370 ns at 25 °C and 520 ns at 150 °C ensures predictable dead-time requirements without excessive voltage overshoot during soft switching.

What is the maximum recommended gate resistor value for 100 kHz operation?

For 100 kHz hard-switched operation with VGS = 0–10 V, a 10 Ω gate resistor is recommended to limit peak gate current to ~1 A while maintaining td(on)/td(off) < 50 ns. Higher values (>22 Ω) increase switching losses due to prolonged Miller plateau crossing, especially at elevated temperatures.

Does the TO-220 tab require electrical isolation from the heatsink?

Yes. The metal tab is internally connected to the drain terminal. If the heatsink is grounded or at a different potential, electrically insulating hardware (e.g., silicone pad + shoulder washer) must be used to prevent short circuits. Thermal resistance penalty is typically +0.3–0.5 °C/W with standard isolators.

How does STP10N80K5 perform in avalanche mode compared to older ST MOSFETs?

It delivers 130 mJ single-pulse EAS at TJ = 25 °C-3× higher than STP10NK80Z (43 mJ). The 100% production avalanche screening ensures every unit meets this spec, unlike earlier generations where only sample testing was performed, significantly improving field reliability in inductive switching.