STMicroelectronics STP10N95K5

Overview

STP10N95K5 from STMicroelectronics is a high-voltage N-channel Power MOSFET based on MDmesh K5 technology, rated for 950 V drain-source breakdown voltage, 650 mΩ typical R_DS(on) at V_GS = 10 V and I_D = 4 A, and 8 A continuous drain current at T_C = 25 °C. It delivers ultra-low gate charge (22 nC) and is 100% avalanche tested for ruggedness in offline switch-mode power supplies.

For engineers reviewing the STP10N95K5 datasheet, STP10N95K5 pinout, STP10N95K5 application, or STP10N95K5 equivalent, key selection criteria include its 950 V rating, 22 nC total gate charge, 130 W power dissipation (TO-220), Zener-protected gate, and dv/dt ruggedness of 50 V/ns - critical for high-reliability flyback and resonant converters.

Technical Context

This device employs ST's proprietary vertical MDmesh K5 structure to minimize conduction and switching losses simultaneously. Its 650 mΩ typ. R_DS(on) and 22 nC Q_g enable high power density in compact 950 V topologies, while the integrated Zener-protected gate ensures robust ESD immunity up to ±30 V.

The MOSFET features 122 mJ single-pulse avalanche energy (E_AS) at T_J = 25 °C and 50 V/ns MOSFET dv/dt ruggedness under V_DD ≤ 760 V, supporting reliable unclamped inductive switching in PFC and LLC half-bridge stages without external snubbers.

Key Specifications

Pinout & Package

STP10N95K5 uses the TO-220 package with isolated tab (non-insulated). The metal tab is electrically connected to the drain terminal and serves as the primary thermal path to the heatsink.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Compared with STW10N95K5, STP10N95K5 trades 3.24× higher junction-to-case thermal resistance for 35% smaller footprint and lower assembly cost; versus IPP60R190C7, it provides guaranteed avalanche ruggedness and 46% higher voltage rating at the expense of 33% higher R_DS(on).

Availability

STP10N95K5 is available at Aetrix Electronics and suitable for industrial power supplies, LED lighting drivers, and EV auxiliary converters requiring stable component supply across multi-year production cycles.

Supply support for STP10N95K5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.

STP10N95K5 belongs to the MDmesh K5 high-voltage Power MOSFET product line, engineered specifically for high-efficiency, high-reliability offline SMPS in industrial and infrastructure applications demanding >800 V blocking capability.

FAQ

What is the maximum safe operating temperature for STP10N95K5?

The absolute maximum junction temperature is 150 °C, and the storage temperature range is −55 to 150 °C. For reliable long-term operation, ST recommends limiting steady-state T_J to ≤130 °C using thermal design that accounts for R_thJC = 4.2 °C/W and PCB copper area. Derating curves in Figure 1 confirm 5 A continuous current at T_C = 100 °C.

Does STP10N95K5 require a gate resistor, and what value is recommended?

Yes - a gate resistor is required to control dV/dt and suppress oscillation. ST's evaluation data (Figure 19) uses 4.7 Ω for switching time measurements. For 65 kHz operation with UC3845B drivers, 10–22 Ω is typical; values below 5 Ω risk overshoot due to 6.5 Ω intrinsic gate resistance interacting with 630 pF C_iss.

Can STP10N95K5 replace STP12NK90Z in an existing design?

No - STP12NK90Z is a 900 V, 0.63 Ω device with different gate threshold (2–4 V vs. 3–5 V), higher Q_g (32 nC), and no Zener protection. While voltage rating is close, the 950 V/650 mΩ/22 nC combination and avalanche test certification make STP10N95K5 non-drop-in; layout and gate drive must be revalidated.

Is the TO-220 tab of STP10N95K5 electrically isolated?

No - the metal tab is internally connected to the drain terminal. Electrical isolation from the heatsink is mandatory unless the heatsink is floating or referenced to drain potential. ST specifies insulation withstand voltage of 2.5 kV RMS between all leads and external heatsink, confirming drain-isolation requirement in grounded-sink configurations.