STMicroelectronics STP10NK80Z

Overview

STP10NK80Z from STMicroelectronics is a Zener-protected N-channel SuperMESH Power MOSFET rated for 800 V drain-source voltage, 9 A continuous drain current at 25 °C, and 780 mΩ typical R_DS(on). It features 100% avalanche testing, minimized gate charge (72 nC), and high dv/dt capability (4.5 V/ns), enabling robust operation in high-voltage switching power supplies and industrial motor drives.

For engineers reviewing the STP10NK80Z datasheet, STP10NK80Z pinout, STP10NK80Z application, or STP10NK80Z equivalent, key selection factors include its TO-220 package thermal resistance (R_thJC = 0.78 °C/W), unclamped inductive switching ruggedness (E_AS = 290 mJ), and Zener-protected gate structure for enhanced ESD immunity (4 kV HBM).

Technical Context

This device implements ST's SuperMESH process - an evolution of PowerMESH - delivering reduced on-resistance while maintaining high voltage blocking and fast switching performance. Its optimized cell layout yields low intrinsic capacitance (C_iss = 2180 pF, C_oss = 205 pF) and controlled reverse recovery (Q_rr = 6.4 µC, t_rr = 645 ns) for hard-switched topologies.

The MOSFET integrates a monolithic Zener diode between gate and source for overvoltage protection, supports pulsed drain currents up to 36 A, and operates across –55 °C to +150 °C junction temperature range. Its safe operating area (SOA) is validated for both resistive and inductive loads per Figure 1 and Figure 19 test circuits.

Key Specifications

Pinout & Package

STP10NK80Z is housed in a TO-220 type A package with isolated tab (drain-connected). The case is electrically connected to the drain terminal, requiring insulated mounting hardware when used in non-isolated topologies.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Compared with STP10NK80ZFP and STW10NK80Z, the STP10NK80Z offers optimal balance of thermal performance (0.78 °C/W), mechanical simplicity (TO-220 tab-mount), and cost-making it preferred for mid-power SMPS and motor drives where heatsink access is available but board real estate is constrained.

Availability

STP10NK80Z is available at Aetrix Electronics and suitable for industrial motor drives, offline switch-mode power supplies, lighting ballasts, and induction heating systems requiring stable component supply and long-term manufacturing continuity.

Supply support for STP10NK80Z includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for automotive, industrial, and consumer markets.

The SuperMESH Power MOSFET product line targets high-efficiency, high-reliability switching applications in 600–900 V systems-specifically engineered to replace legacy planar devices in power conversion stages demanding ruggedness and low conduction loss.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STP10NK80Z supports 6 A continuous drain current at T_C = 100 °C, as specified in Table 1 of DS2835 Rev 8. This derating reflects thermal limits of the TO-220 package and ensures junction temperature remains within –55 °C to +150 °C operating range under sustained load.

Does STP10NK80Z include integrated gate protection?

Yes - STP10NK80Z integrates a monolithic Zener diode between gate and source, providing bidirectional ±30 V clamping. This protects the gate oxide from overvoltage transients during switching, layout parasitics, or ESD events, eliminating need for external gate Zeners in most designs.

Can STP10NK80Z be used in zero-voltage switching (ZVS) topologies?

Yes - its low reverse recovery charge (Q_rr = 6.4 µC) and fast recovery time (t_rr = 645 ns) make it suitable for ZVS resonant converters. However, designers must ensure di/dt does not exceed 200 A/μs during recovery to avoid secondary breakdown, per footnote 3 in Table 1.

What is the insulation withstand voltage rating for STP10NK80Z?

The STP10NK80Z has a V_ISO rating of 2.5 kV RMS (1 s, T_C = 25 °C) from all three leads to external heatsink. This applies only when mounted with appropriate insulating hardware (e.g., silicone pad + shoulder washer); bare-metal tab contact voids this rating.